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Diodes Incorporated DMP2110UVT-13
- Part No.:
- DMP2110UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP2110UVT-13.pdf
- Description:
- MOSFET 2P-CH 20V 1.8A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:4,490
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Product details
Overview
DMP2110UVT-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V VDSS, 150mΩ RDS(ON) @ VGS = -4.5V, and -1.8A continuous drain current at TA = +25°C. It serves as a compact, low-voltage load switch or power rail controller in space-constrained DC-DC and battery-powered systems.
For engineers reviewing the DMP2110UVT-13 datasheet, DMP2110UVT-13 pinout, DMP2110UVT-13 application, or DMP2110UVT-13 equivalent, key selection criteria include gate threshold voltage (-0.45V to -1.0V), low input capacitance (443pF Ciss), thermal resistance (168°C/W RθJA on FR-4), and dual-channel integration for complementary switching or redundancy.
Technical Context
This dual P-MOSFET integrates two identical enhancement-mode channels sharing a common source configuration in a single TSOT26 package. Each channel operates with a gate threshold voltage range of -0.45V to -1.0V and supports logic-level drive down to -1.8V, enabling direct interface with 1.8V/2.5V/3.3V microcontrollers.
Its dynamic characteristics include 6.0nC total gate charge, 1.8nC gate-drain charge, and fast switching times (tD(ON) = 4.0ns, tF = 9.5ns), optimized for high-frequency PWM control in portable power management where conduction loss and switching loss must both be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum drain-source blocking voltage for 3.3V/5V system rail switching |
| RDS(ON) @ VGS = -4.5V | 150mΩ - Enables ≤270mW conduction loss at -1.8A, suitable for <1W load switching |
| ID (continuous) | -1.8A @ TA = +25°C - Supports USB-powered peripherals and sensor node power gating |
| Ciss | 443pF - Low input capacitance reduces gate drive power and improves EMI performance |
| VGS(TH) | -0.45V to -1.0V - Ensures reliable turn-on with standard logic-level outputs without level shifters |
| RθJA | 168°C/W - Thermal limit requires minimal copper area on FR-4 for ambient operation up to +70°C |
| Qg | 6.0nC - Enables efficient 1–2MHz PWM operation with <1μs transition times |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 × 1.60 × 0.60 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first P-MOSFET; referenced to S1 |
| S1 | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 unless externally tied |
| D1 | Drain of Channel 1 | High-side switch output for Channel 1; connects to load supply rail |
| G2 | Gate of Channel 2 | Independent control input for second P-MOSFET; referenced to S2 |
| S2 | Source of Channel 2 | Common source node for Channel 2; separate from S1 for dual-rail isolation |
| D2 | Drain of Channel 2 | High-side switch output for Channel 2; enables independent load control |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 200mΩ @ VGS = -2.5V - Enables use with 2.5V I/O controllers without gate boosting |
| Ultra-low gate threshold | VGS(TH) down to -0.45V - Guarantees turn-on even with weak pull-up or degraded gate drive |
| Low Ciss and Qgd | 443pF Ciss, 1.8nC Qgd - Minimizes Miller effect and improves switching stability in noisy environments |
| Thermally enhanced layout | 168°C/W RθJA on standard FR-4 - Achieves full current rating with only minimum recommended pad area (no thermal pad required) |
| Green packaging | Halogen- and antimony-free, lead-free per RoHS 3 - Complies with IPC-1752A material declaration requirements |
Applications
| USB Power Switching | Load Switch for Wearables |
|---|---|
Use Scenario: Selective power delivery to USB peripheral ports in portable hubs or docking stations. IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling VBUS enable per port with independent fault isolation. Use Value: 150mΩ RDS(ON) limits voltage drop to <270mV at 1.8A, preserving USB 2.0 voltage compliance while enabling per-port ON/OFF control. |
Use Scenario: Dynamic power gating of BLE radio, display, and sensor subsystems in smartwatches. IC Role / Device Role / Timing Role: Dual independent load switches managing separate 3.3V and 1.8V rails under MCU GPIO control. Use Value: -0.45V VGS(TH) ensures reliable turn-on from 1.8V GPIOs; 6.0nC Qg allows sub-microsecond rail sequencing. |
| Battery Backup Switchover | Redundant Power Path Control |
Use Scenario: Seamless transition between main Li-ion battery and backup coin cell in real-time clock modules. IC Role / Device Role / Timing Role: Dual P-MOSFET configured as OR-ing diode replacement with reverse-current blocking. Use Value: 240mΩ RDS(ON) @ VGS = -1.8V provides lower forward drop than Schottky diodes, extending coin cell life by >30%. |
Use Scenario: Fault-tolerant power distribution in industrial sensors requiring dual-supply redundancy. IC Role / Device Role / Timing Role: Independent channel control for primary/backup 5V supplies with automatic failover detection. Use Value: Separate S1/S2 terminals allow galvanic isolation between supplies; low Coss (59pF) prevents cross-talk during switchover transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | Single-channel, 20V, 120mΩ @ -4.5V, SOT-23-6 package | Requires two devices for dual-rail control; higher board area but lower RDS(ON) | Select when lowest conduction loss per channel is critical and board space permits duplication. |
| SI3483DV-T1-E3 | Dual P-channel, -20V, 220mΩ @ -4.5V, TSOP-6 package, higher RDS(ON) | Same pinout but higher on-resistance; less suitable for >1A loads | Choose for legacy compatibility where margin exists for increased I²R loss and thermal rise. |
Compared with DMN2016LFG-7 and SI3483DV-T1-E3, the DMP2110UVT-13 uniquely balances dual-channel integration, 150mΩ RDS(ON), and TSOT26 footprint-enabling compact, single-component dual-rail control without sacrificing efficiency or thermal headroom.
Availability
DMP2110UVT-13 is available at Aetrix Electronics and suitable for USB power switching, wearable load management, battery backup switchover, and redundant power path control requiring stable component supply across production lifecycles.
Supply support for DMP2110UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMP2110UVT belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for compact, battery-operated devices requiring minimal gate drive voltage and high reliability in thermally constrained layouts.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
Each channel supports -1.4A continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations on standard FR-4 PCBs with minimum pad layout; performance improves with enhanced copper area or forced airflow.
Can DMP2110UVT-13 be used in reverse-battery protection circuits?
Yes - its -20V VDSS rating and body diode orientation (source-to-drain anode) allow it to function as a reverse-polarity protector when placed in series with the positive supply rail. The low 150mΩ RDS(ON) minimizes voltage drop compared to discrete diode solutions.
Is the TSOT26 package compatible with standard SMT reflow profiles?
Yes - the TSOT26 package is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature tolerance up to 260°C. Its moisture sensitivity level 1 eliminates bake requirements prior to assembly, supporting standard high-volume manufacturing flow.
Does DMP2110UVT-13 require external gate resistors for stable switching?
Not inherently - its 8.5Ω gate resistance and 6.0nC total gate charge allow direct GPIO driving at ≤1MHz. However, a 10–47Ω series gate resistor is recommended to dampen ringing in high-dV/dt environments or when routing long traces to reduce EMI and overshoot.
DMP2110UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 443pF @ 6V
- Power - Max:
- 740mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP2110UVT-13 FAQ
1.How can I place an order for DMP2110UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2110UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2110UVT-13 reliable?
The price and inventory of DMP2110UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2110UVT-13 is usually 5 days.
3.What payment methods are accepted for DMP2110UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2110UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2110UVT-13?
DMP2110UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2110UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2110UVT-13?
For technical support, including DMP2110UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2110UVT-13 requirements.
6.How does Aetrix verify that DMP2110UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMP2110UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2110UVT-13 meets industry standards.
7.What is the process for return or replacement of DMP2110UVT-13?
All DMP2110UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2110UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2110UVT-13 part is unused and in its original packaging.
Return procedure for DMP2110UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP2110UVT-13 Tags
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