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Diodes Incorporated DMP2110UVT-7
- Part No.:
- DMP2110UVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP2110UVT-7.pdf
- Description:
- MOSFET 2P-CH 20V 1.8A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:2,986
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Product details
Overview
DMP2110UVT-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V VDSS, 150mΩ RDS(ON) at VGS = -4.5V, and -1.8A continuous drain current at TA = +25°C. It serves as a compact, low-voltage load switch in space-constrained power management circuits such as USB port protection and battery backup switching.
For engineers reviewing the DMP2110UVT-7 datasheet, DMP2110UVT-7 pinout, DMP2110UVT-7 application, or DMP2110UVT-7 equivalent, key selection criteria include gate threshold voltage (-0.45V to -1.0V), low input capacitance (443pF Ciss), thermal resistance (168°C/W RθJA on FR-4), and dual-channel integration for complementary control in half-bridge or OR-ing configurations.
Technical Context
This dual P-MOSFET integrates two matched enhancement-mode channels sharing a common source configuration in a single TSOT26 package. Its low VGS(TH) enables reliable turn-on with 2.5V–3.3V logic-level gate drive, while its 47pF Crss and 6.0nC total gate charge support fast switching in DC-DC converter synchronous rectification and hot-swap control.
The device features thermally optimized leadframe construction with 0.013g mass and UL 94V-0 molding compound. Its RDS(ON) remains stable across -55°C to +150°C junction temperature, with normalized variation ≤1.6× at 150°C versus 25°C under VGS = -4.5V bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum blocking voltage before avalanche conduction in power rail switching up to 12V systems. |
| RDS(ON) | 150mΩ @ VGS = -4.5V - Enables <100mW conduction loss at 0.8A load in portable battery switches. |
| ID (cont) | -1.8A @ TA = +25°C - Supports sustained load currents in USB Type-C port power delivery and e-fuse circuits. |
| Ciss | 443pF - Limits gate drive power requirement and enables clean edge rates with standard 3.3V GPIO drivers. |
| Qg | 6.0nC - Allows full channel switching within 100ns using 60Ω gate resistor, minimizing transition losses. |
| RθJA | 168°C/W - Requires minimal PCB copper area (2oz FR-4, minimum pad layout) for thermal compliance in sealed enclosures. |
| VGS(TH) | -0.45V to -1.0V - Ensures robust turn-on margin with 2.5V logic, reducing risk of partial enhancement in low-VCC states. |
Pinout & Package
TSOT26 surface-mount package: 6-pin, 2.9mm × 1.6mm × 0.95mm body height, lead-free tin finish over copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first P-MOSFET; referenced to S1 for local feedback in discrete regulators. |
| S1 | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 unless externally tied. |
| D1 | Drain of Channel 1 | High-side switching node for load connected between VIN and D1; supports bidirectional current in OR-ing. |
| G2 | Gate of Channel 2 | Independent control input for second P-MOSFET; enables dual independent switches or mirrored operation. |
| S2 | Source of Channel 2 | Common source node for Channel 2; allows separate grounding or shared return path depending on topology. |
| D2 | Drain of Channel 2 | Second high-side switching node; used for redundant power path control or differential sensing inputs. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 200mΩ @ VGS = -2.5V - Enables direct interface with 2.5V/3.3V microcontroller I/O without level-shifting. |
| Low gate threshold voltage | VGS(TH) down to -0.45V - Reduces risk of unintended turn-on during power-up sequencing in multi-rail systems. |
| Low input capacitance | Ciss = 443pF - Minimizes gate drive current demand and EMI generation in high-frequency switching applications. |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements for automotive and industrial OEMs. |
| Thermally enhanced leadframe | RθJA = 1.01°C/W with 1-inch² copper plate - Supports 0.74W dissipation in thermally constrained modules without heatsinks. |
Applications
| USB Port Power Switching | Battery Backup OR-ing Circuit |
|---|---|
|
Use Scenario: Selecting between main system supply and USB VBUS for peripheral power during host enumeration. IC Role / Device Role: Dual-channel high-side switch controlling independent power paths to prevent backfeed and ensure priority-based sourcing. Use Value: 150mΩ RDS(ON) limits voltage drop to <120mV at 0.8A, preserving USB 2.0 signaling integrity and meeting BC1.2 voltage tolerance. |
Use Scenario: Seamlessly transitioning between primary Li-ion battery and backup coin cell during main battery depletion. IC Role / Device Role: Dual P-MOSFET implementing ideal diode OR-ing with reverse-current blocking and low forward drop. Use Value: -1.0V VSD body diode forward voltage at -1A enables <100mV forward drop when actively driven, outperforming Schottky solutions in leakage-critical backup rails. |
| Hot-Swap Controller Interface | Low-Voltage Logic-Level Load Switch |
|
Use Scenario: Isolating downstream circuitry during live insertion of PCIe add-in cards or modular compute blades. IC Role / Device Role: Dual-channel switch providing controlled inrush limiting and fault isolation via external current-sense amplifier feedback. Use Value: 240mΩ RDS(ON) @ VGS = -1.8V ensures safe turn-on under weak gate drive conditions typical in analog hot-swap IC reference designs. |
Use Scenario: Enabling/disabling 1.8V or 3.3V subsystems (e.g., sensors, RF transceivers) in wearables and IoT edge nodes. IC Role / Device Role: Compact dual load switch replacing discrete MOSFETs and gate resistors to reduce BOM count and PCB area. Use Value: TSOT26 footprint (2.9mm × 1.6mm) saves >60% board space versus SO-8 dual P-MOSFET alternatives while maintaining thermal performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower RDS(ON) (120mΩ @ -4.5V) but higher Qg (8.5nC); same TSOT26 package. | Better efficiency at high load, but slower switching and higher gate drive loss in PWM-controlled loads. | Select when conduction loss dominates system thermal budget and switching frequency <500kHz. |
| SI2301BDS-T1-GE3 | Higher RDS(ON) (200mΩ @ -4.5V), lower Ciss (320pF); same pinout but different marking and thermal resistance (200°C/W). | Lower EMI in noise-sensitive analog sections, but requires larger copper area for thermal management. | Select when board-level EMI compliance is critical and peak current <1.2A. |
Compared with DMP2110UVT-7, DMC2038LVT-7 improves conduction efficiency but increases gate drive burden, while SI2301BDS-T1-GE3 trades off on-resistance for lower capacitive noise-making DMP2110UVT-7 the balanced choice for mixed-signal portable designs requiring both low loss and clean switching.
Availability
DMP2110UVT-7 is available at Aetrix Electronics and suitable for USB power switching, battery OR-ing, and low-voltage load management requiring stable component supply and long-term production continuity.
Supply support for DMP2110UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMP2110UVT belongs to Diodes' "Ultra-Low RDS(ON) Small-Signal MOSFET" product line, engineered specifically for space-constrained, low-voltage power control in portable and battery-powered equipment.
FAQ
What is the maximum continuous drain current rating for DMP2110UVT-7 at 70°C ambient?
The maximum continuous drain current is -1.4A at TA = +70°C, derated from -1.8A at +25°C per the datasheet's thermal characteristics table. This reflects junction-to-ambient thermal resistance limitations on standard FR-4 PCBs with minimum recommended copper pads.
Can DMP2110UVT-7 be used in a synchronous buck converter's high-side switch position?
No-DMP2110UVT-7 is a P-channel MOSFET intended for high-side switching with gate drive referenced to source, but its -20V VDSS and 150mΩ RDS(ON) are optimized for ≤12V input rails. It lacks integrated bootstrap circuitry or gate driver compatibility required for N-channel high-side use in buck converters.
Is the TSOT26 package of DMP2110UVT-7 compatible with standard reflow profiles for lead-free assembly?
Yes-the device is fully RoHS 3 compliant with tin-finished leads and meets J-STD-020 moisture sensitivity level 1, allowing exposure to ambient indefinitely and supporting standard Pb-free reflow profiles (peak 260°C, 30-second duration above 217°C) without baking.
Does DMP2110UVT-7 integrate body diode reverse recovery protection?
It includes an intrinsic body diode with tRR = 8.3ns and QRR = 2.0nC at -1A, enabling fast commutation in OR-ing and reverse-current blocking. However, no external snubber or active clamp is integrated-the diode is parasitic and must be managed in layout for high-dI/dt applications.
DMP2110UVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 443pF @ 6V
- Power - Max:
- 740mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP2110UVT-7 FAQ
1.How can I place an order for DMP2110UVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2110UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2110UVT-7 reliable?
The price and inventory of DMP2110UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2110UVT-7 is usually 5 days.
3.What payment methods are accepted for DMP2110UVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2110UVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2110UVT-7?
DMP2110UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2110UVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2110UVT-7?
For technical support, including DMP2110UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2110UVT-7 requirements.
6.How does Aetrix verify that DMP2110UVT-7 is sourced from the original manufacturer or authorized distributors?
All DMP2110UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2110UVT-7 meets industry standards.
7.What is the process for return or replacement of DMP2110UVT-7?
All DMP2110UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2110UVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2110UVT-7 part is unused and in its original packaging.
Return procedure for DMP2110UVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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