Diodes Incorporated DMP2110UVTQ-13

Overview

DMP2110UVTQ-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in TSOT26 package, rated for -20V V_DSS, 150mΩ R_DS(ON) at V_GS = -4.5V, and -1.8A continuous drain current at T_A = +25°C. It serves as a compact, low-voltage load switch or power rail controller in space-constrained portable electronics.

For engineers reviewing the DMP2110UVTQ-13 datasheet, DMP2110UVTQ-13 pinout, DMP2110UVTQ-13 application, or DMP2110UVTQ-13 equivalent, key selection criteria include gate threshold voltage (-0.45V to -1.0V), low input capacitance (443pF C_iss), AEC-Q101 qualification, thermal resistance (168°C/W R_θJA), and dual-channel integration in a 2.9mm × 2.8mm footprint.

Technical Context

This dual P-MOSFET integrates two independent channels sharing a common source configuration in a single TSOT26 package, enabling synchronous or independent high-side switching. Its low V_GS(TH) allows direct drive from 1.8V/2.5V logic, while low R_DS(ON) at low gate voltages supports efficient battery-powered operation.

The device features matched channel characteristics, with typical R_DS(ON) variation <10% between channels under identical bias conditions. Its 8.5Ω gate resistance and 6.0nC total gate charge support fast switching (t_F = 9.5ns) with controlled EMI, and body diode recovery (t_RR = 8.3ns, Q_RR = 2.0nC) enables use in flyback or reverse-polarity protection circuits.

Key Specifications

Pinout & Package

Package: TSOT26 - 6-pin, 2.9mm × 2.8mm × 0.95mm surface-mount package with exposed thermal pad (not electrically connected), RoHS-compliant tin finish, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with DMN2016LFG-7 and AO6401, DMP2110UVTQ-13 uniquely combines dual-channel integration, AEC-Q101 qualification, and optimized low-V_GS performance in a space-saving TSOT26 package-making it the only choice for automotive body control modules requiring both functional safety alignment and compactness.

Availability

DMP2110UVTQ-13 is available at Aetrix Electronics and suitable for battery-powered load switching, USB port power control, and automotive body electronics requiring stable component supply and long-term production continuity.

Supply support for DMP2110UVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The DMP2110UVTQ belongs to Diodes' automotive-grade power MOSFET product line, engineered specifically for compact, low-voltage power switching in infotainment, body control, and ADAS subsystems where AEC-Q101 compliance and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

Each channel supports -1.4A continuous drain current at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOT26 package on standard FR-4 PCB with minimum recommended copper area. Derating curves in Figure 5 confirm R_DS(ON) increases by ~25% at 70°C versus 25°C, maintaining safe operation within PD = 0.74W limit.

Can DMP2110UVTQ-13 be used in reverse-polarity protection circuits?

Yes - its integrated body diodes support reverse-polarity protection when configured as high-side switches with sources tied to input voltage. The typical V_SD of -1.0V at -1A (Figure 9) ensures low forward drop, and t_RR = 8.3ns minimizes reverse recovery spikes. However, external Schottky diodes may be preferred for ultra-low-loss applications due to the MOSFET's inherent diode V_F.

Is the TSOT26 package thermally enhanced?

No - the TSOT26 package lacks an exposed thermal pad or heatsink tab. Its R_θJA is 168°C/W on standard FR-4 (2 oz Cu, minimum pad) and improves to 124°C/W with a 1-inch² copper plane (Note 6). For sustained >1A operation, PCB-level thermal design - including thermal vias and copper pours - is essential to maintain T_J < 150°C.

Does the device support independent gate control for both channels?

Yes - G1 and G2 are fully isolated terminals, allowing independent PWM, enable, or logic-level control of each channel. The datasheet's top-view pinout and "Equivalent Circuit" diagram confirm separate gate connections. No internal coupling exists between gates, enabling asymmetric switching (e.g., staggered turn-on for inrush limiting) without cross-talk.