Diodes Incorporated DMP213DUFA-7B

Overview

DMP213DUFA-7B from Diodes Incorporated is a 25V P-channel enhancement-mode MOSFET in an ultra-compact X2-DFN0806-3 package (0.4mm profile, 0.48mm² footprint), rated for −166mA continuous drain current at V_GS = −4.5V, with R_DS(on) = 10Ω, low −0.9V typical gate threshold, and >6kV HBM ESD protection - deployed as a load switch in space-constrained portable power management circuits.

For engineers reviewing the DMP213DUFA-7B datasheet, DMP213DUFA-7B pinout, DMP213DUFA-7B application, or DMP213DUFA-7B equivalent, key selection criteria include its ultra-low-profile DFN package compatibility with thin PCBs, battery-direct drive capability due to low |V_GS(th)|, verified R_DS(on) performance at −2.7V/−4.5V, thermal resistance of 353°C/W on FR-4, and integrated body diode with −1.5V forward voltage at −0.2A.

Technical Context

This P-channel MOSFET operates in enhancement mode with a negative gate-source voltage control logic, enabling high-side load switching without level-shifting circuitry. Its low |V_GS(th)| (−0.65 to −1.5V) ensures reliable turn-on from single-cell Li-ion (2.7–4.2V) or alkaline batteries, while the integrated body diode supports reverse-current blocking in power-path applications.

The device uses a silicon die in a thermally enhanced molded-plastic DFN package with NiPdAu-plated copper leadframe and UL 94V-0 flammability rating. Junction-to-ambient thermal resistance is 353°C/W under standard FR-4 mounting (single-sided, minimum pad layout), and it maintains stable R_DS(on) across −55°C to +150°C operating range.

Key Specifications

Pinout & Package

Package: X2-DFN0806-3 - 0.4mm height, 0.60 × 0.80 mm outline, 3-terminal bottom-exposed thermal pad (non-electrical), RoHS-compliant NiPdAu finish, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN213DUFA-7B and AO3401, DMP213DUFA-7B uniquely balances ultra-miniaturization (0.4mm height, 0.48mm²), battery-direct operation (−0.9V V_GS(th)), and sufficient current handling (−166mA) for micro-power IoT endpoints - making it irreplaceable where thickness and footprint are constrained more than absolute R_DS(on) or current rating.

Availability

DMP213DUFA-7B is available at Aetrix Electronics and suitable for portable load switching, USB peripheral power control, and low-power sensor hub applications requiring stable component supply, long-lifecycle support, and consistent DFN0806 packaging.

Supply support for DMP213DUFA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This device belongs to Diodes' X2-DFN ultra-thin MOSFET product line, engineered specifically for space-constrained portable electronics where board thickness, footprint, and battery-direct drive capability are primary system constraints.

FAQ

What is the maximum allowable junction temperature for DMP213DUFA-7B?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent parametric shift or catastrophic failure. Derating begins at +25°C ambient using R_θJA = 353°C/W; at +70°C ambient, maximum continuous power drops to ~102mW to maintain T_J ≤ 150°C.

Can DMP213DUFA-7B be used in a high-side switch configuration with a 1.8V GPIO control signal?

Yes - its −0.65V minimum V_GS(th) ensures reliable turn-on with 1.8V logic: applying 0V to gate (relative to source at 1.8V) yields V_GS = −1.8V, well below threshold. Verified R_DS(on) of 13Ω at V_GS = −2.7V confirms strong enhancement even at reduced overdrive.

Is the thermal pad on the X2-DFN0806-3 package electrically connected?

No - the exposed thermal pad on the underside of the X2-DFN0806-3 package is non-functional and must be left floating or grounded solely for thermal conduction. It is not tied to any internal terminal; schematic symbols and layout guidelines (AP02001) explicitly define it as a thermal slug only.

Does DMP213DUFA-7B include intrinsic gate protection beyond the >6kV HBM rating?

Yes - the datasheet specifies an integrated gate protection diode (visible in the Equivalent Circuit diagram) and ESD structure designed for >6kV Human Body Model. No external gate resistor or Zener clamp is required for standard handling or board-level ESD immunity per IEC 61000-4-2 Level 2 (4kV contact).