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Diodes Incorporated DMP21D0UFB4-7R
- Part No.:
- DMP21D0UFB4-7R
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMP21D0UFB4-7R.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-DFN1006-
- Quantity:
- Payment:
- Shipping:
Inventory:2,650
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Product details
Overview
DMP21D0UFB4-7R from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in X2-DFN1006-3 package, designed for ultra-compact load switching in portable electronics. It delivers RDS(ON) = 495 mΩ at VGS = −4.5 V, supports −0.77 A continuous drain current at +25°C, and features ESD-protected gate with −1.0 V typical VGS(TH), enabling direct GPIO-level control in space-constrained battery-powered systems.
For engineers reviewing the DMP21D0UFB4-7R datasheet, DMP21D0UFB4-7R pinout, DMP21D0UFB4-7R application, or DMP21D0UFB4-7R equivalent, key selection criteria include its 0.6 mm² footprint, low 0.4 mm profile, −20 V VDSS, gate threshold compatibility with 1.8–3.3 V logic, and thermal resistance of 293 °C/W on standard FR-4 layout.
Technical Context
This P-channel MOSFET operates as a high-side load switch with normally-off behavior, activated by negative gate-source voltage relative to source. Its low RDS(ON) at low |VGS| (690 mΩ at −2.5 V) enables efficient operation from single-cell Li-ion or 3.3 V rails without level-shifting circuitry.
The integrated gate protection diode and ±10 μA IGSS ensure robustness against transient coupling and leakage-induced false turn-on. Thermal performance is optimized for minimal PCB area: RθJA drops to 126 °C/W with thermal vias, supporting sustained −0.55 A at +85°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Maximum drain-source blocking voltage for single-cell battery input protection |
| RDS(ON) @ VGS = −4.5 V | 495 mΩ - Enables <150 mW conduction loss at 0.4 A load current |
| ID Continuous @ +25°C | −0.77 A - Sufficient for USB peripheral power switches and LED drivers |
| VGS(TH) | −0.7 V typ - Compatible with 1.8 V and 3.3 V microcontroller GPIO drive |
| Ciss | 76.5 pF - Supports fast switching with <10 ns tD(ON) using 6 Ω gate resistor |
| Qg @ VGS = −4.5 V | 1.0 nC - Minimizes gate drive power in high-frequency PWM applications |
| RθJA (min pad) | 293 °C/W - Defines thermal derating to 0.43 W max power dissipation on standard layout |
Pinout & Package
Package: X2-DFN1006-3 - 1.0 × 0.6 mm, 0.4 mm height, 3-terminal bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Connected to higher potential rail; serves as reference for gate control and primary current return path |
| 2 (Drain) | Drain terminal (D) | Switched output node; connects to load cathode or downstream circuitry requiring controlled power delivery |
| 3 (Gate) | Gate terminal (G) | Logic-controlled input; requires negative voltage relative to source to turn on; ESD-protected per HBM 2 kV |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.6 mm² area - 13× smaller than SOT-23, enabling dense portable PCB layouts |
| Low-profile package | 0.4 mm max height - fits under mechanical shields and in slim enclosures |
| Low gate threshold | −0.7 V typical VGS(TH) - ensures reliable turn-on with 1.8 V/3.3 V logic without external level shifters |
| ESD-protected gate | HBM 2 kV rating - eliminates need for external gate protection in handheld device designs |
| Green construction | Halogen- and antimony-free, lead-free, UL 94V-0 mold compound - meets global environmental compliance mandates |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery-to-system power path; activated only when system voltage exceeds battery voltage. Use Value: Prevents battery self-discharge through system leakage paths with <1 μA IDSS at −20 V, extending shelf life. |
Use Scenario: Controlled enable/disable of 5 V USB VBUS to peripheral devices during enumeration or fault conditions. IC Role / Device Role / Timing Role: Load switch isolating downstream USB ports; driven directly by USB controller GPIO. Use Value: Achieves <100 ns total switching time (tD(ON) + tR) and <1.5 nC Qg, minimizing enumeration delay and bus reset latency. |
| LED Backlight Dimming | IoT Sensor Node Power Gating |
|
Use Scenario: PWM-driven current regulation for white LED backlight in compact displays. IC Role / Device Role / Timing Role: Low-side or high-side current switch modulating LED anode/cathode connection at 1–10 kHz. Use Value: Delivers 495 mΩ RDS(ON) at −4.5 V gate drive, limiting conduction loss to <200 mW at 0.65 A peak LED current. |
Use Scenario: Periodic wake-up and shutdown of BLE/Wi-Fi sensor nodes to extend battery life beyond 1 year. IC Role / Device Role / Timing Role: Main power rail switch disconnecting MCU, radio, and sensors during deep sleep mode. Use Value: 0.6 mm² footprint and 0.4 mm height allow integration into coin-cell–powered modules where board area is constrained to <50 mm². |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(ON) = 200 mΩ @ −4.5 V, but larger X2-DFN2020-6 (2.0 × 2.0 mm) package | Higher current capability (−2.5 A), unsuitable for ultra-dense layouts | Select when >1 A load current or lower conduction loss is required and board area permits |
| AO3415 | RDS(ON) = 55 mΩ @ −4.5 V, SOT-23 package (2.9 × 1.6 mm), no integrated ESD diode | Requires external gate protection; higher profile limits use in thin devices | Choose for cost-sensitive, non-portable applications needing lower RDS(ON) and accepting larger footprint |
Compared with DMN2016LFG-7 and AO3415, DMP21D0UFB4-7R uniquely balances sub-1 mm² size, −0.77 A rating, and gate-level ESD protection-making it optimal for space-limited, battery-operated systems where reliability and miniaturization are co-prioritized.
Availability
DMP21D0UFB4-7R is available at Aetrix Electronics and suitable for portable electronics, USB power management, LED backlighting, and IoT sensor node power gating requiring stable component supply across production lifecycles.
Supply support for DMP21D0UFB4-7R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
DMP21D0UFB4 belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for footprint- and height-constrained portable electronics requiring robust, logic-level-compatible switching with minimal board real estate.
FAQ
What is the maximum allowable gate-source voltage for DMP21D0UFB4-7R?
The absolute maximum VGS rating is ±8 V. Exceeding this risks permanent gate oxide damage. In practice, gate drive should be limited to −4.5 V for optimal RDS(ON) and −2.5 V for GPIO-compatible operation, both well within safe margin. The device includes internal gate protection diode to clamp transients.
Can DMP21D0UFB4-7R be used in automotive applications?
DMP21D0UFB4-7R is not AEC-Q101 qualified. While its operating temperature range (−55°C to +150°C) meets automotive ambient requirements, Diodes Incorporated explicitly states that automotive-grade versions require PPAP-capable manufacturing and IATF 16949 certification-available only under separate part numbers like DMP21D0UFB4Q-7R.
How does thermal performance change with PCB layout improvements?
With minimum recommended pad layout (FR-4, 2 oz copper), RθJA is 293 °C/W. Adding thermal vias to a 1-inch² copper plane reduces RθJA to 126 °C/W, doubling allowable continuous current at +85°C ambient-from −0.55 A to −0.95 A-without derating or heatsinking.
Is the X2-DFN1006-3 package compatible with standard reflow profiles?
Yes. The X2-DFN1006-3 package is rated for moisture sensitivity level 1 (MSL-1) per J-STD-020 and supports standard lead-free reflow profiles up to 260°C peak. Its NiPdAu finish ensures solderability per MIL-STD-202, Method 208, and the 0.001 g weight minimizes tombstoning risk during placement.
DMP21D0UFB4-7R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 495mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 76.5 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 430mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMP21D0UFB4-7R FAQ
1.How can I place an order for DMP21D0UFB4-7R through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP21D0UFB4-7R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP21D0UFB4-7R reliable?
The price and inventory of DMP21D0UFB4-7R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP21D0UFB4-7R is usually 5 days.
3.What payment methods are accepted for DMP21D0UFB4-7R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP21D0UFB4-7R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP21D0UFB4-7R?
DMP21D0UFB4-7R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP21D0UFB4-7R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP21D0UFB4-7R?
For technical support, including DMP21D0UFB4-7R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP21D0UFB4-7R requirements.
6.How does Aetrix verify that DMP21D0UFB4-7R is sourced from the original manufacturer or authorized distributors?
All DMP21D0UFB4-7R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP21D0UFB4-7R meets industry standards.
7.What is the process for return or replacement of DMP21D0UFB4-7R?
All DMP21D0UFB4-7R units undergo pre-shipment inspection (PSI). If there is an issue with DMP21D0UFB4-7R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP21D0UFB4-7R part is unused and in its original packaging.
Return procedure for DMP21D0UFB4-7R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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