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Diodes Incorporated DMP21D5UFD-7

Part No.:
DMP21D5UFD-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-UDFN
Datasheet:
AetrixDMP21D5UFD-7.pdf
Description:
MOSFET P-CH 20V 600MA 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,291

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Product details

Overview

DMP21D5UFD-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in a 1.2 mm × 1.2 mm X1-DFN1212-3 package, rated for -20 V VDSS, 1.0 Ω RDS(ON) at VGS = -4.5 V and -600 mA ID, with gate threshold voltage as low as -1.0 V - optimized for compact, high-efficiency DC-DC converter power switches.

For engineers reviewing the DMP21D5UFD-7 datasheet, DMP21D5UFD-7 pinout, DMP21D5UFD-7 application, or DMP21D5UFD-7 equivalent, key selection criteria include low-voltage gate drive compatibility (VGS(TH) ≤ -1.0 V), ultra-small footprint, body diode conduction capability, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 8.5 ns, tF = 19.2 ns) and low input capacitance (Ciss = 46.1 pF). Its -1.0 V max VGS(TH) enables direct interface with 1.8 V and 2.5 V logic outputs without level shifting.

The integrated ESD-protected gate and built-in body diode support robust operation in bidirectional current paths. Thermal resistance of 140 °C/W (with 1-inch2 copper pad) allows sustained -400 mA operation at +70 °C ambient in space-constrained PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -20 V - supports rail-to-rail operation in 3.3 V and 5 V systems with margin against transients
RDS(ON) 1.0 Ω @ VGS = -4.5 V - delivers <100 mW conduction loss at 300 mA, critical for battery-powered efficiency
VGS(TH) -1.0 V max - ensures full enhancement with 1.8 V GPIO, eliminating external gate drivers
ID (max) -600 mA @ TA = +25°C - sufficient for point-of-load converters in wearables and IoT sensors
Ciss 46.1 pF - reduces gate drive power and enables >1 MHz switching without excessive driver stress
Qg 0.5 nC @ VGS = -4.5 V - minimizes switching energy loss and simplifies gate driver selection
TJ range -55°C to +150°C - qualified per AEC-Q101, enabling use in under-hood automotive modules

Pinout & Package

Package: X1-DFN1212-3 - 1.2 mm × 1.2 mm, 0.5 mm height, thermally enhanced leadframe with exposed drain pad (top view: Gate–Drain–Source, left-to-right).

Pin/Terminal Circuit Role Design Meaning
1 (Left) Gate Control terminal; low-threshold (-1.0 V max) enables direct microcontroller drive
2 (Center) Drain High-side switch node; tied to exposed thermal pad for heat dissipation
3 (Right) Source Return path for load current; referenced to system ground in high-side configuration

Key Features

Feature Design Value
Low gate threshold voltage VGS(TH) ≤ -1.0 V - eliminates need for charge pumps or level shifters in 1.8 V/2.5 V control systems
ESD-protected gate HBM ≥ 2 kV - prevents damage during board assembly and handling without additional protection circuitry
Ultra-small footprint 1.2 mm × 1.2 mm DFN - saves >70% board area vs. SOT-23, critical for wearable and hearing aid designs
Integrated body diode VSD = -0.75 V @ IS = -330 mA - supports synchronous rectification and freewheeling in buck converters
AEC-Q101 qualified Automotive-grade reliability - validated for temperature cycling, HTRB, and UHAST per AEC standard

Applications

Power Management in Wearables Battery Protection Circuits

Use Scenario: Voltage regulation for Bluetooth LE modules and smart earbuds with tight space constraints and 3.7 V Li-ion supply.

IC Role / Device Role / Timing Role: High-side load switch controlling power to RF subsystems during sleep mode.

Use Value: 1.0 Ω RDS(ON) limits dropout to <300 mV at 300 mA, preserving battery runtime; 1.2 mm² footprint fits within 4 mm × 4 mm module area.

Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs for medical sensors.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional current control and fault isolation.

Use Value: -1.0 V VGS(TH) ensures reliable turn-on with low-voltage battery monitor IC outputs; AEC-Q101 rating supports long-term field reliability.

USB-C Power Delivery Switches Automotive Body Control Modules

Use Scenario: VBUS path control in portable USB-C accessories requiring 5 V/3 A switching with minimal voltage drop.

IC Role / Device Role / Timing Role: Low-loss power switch between upstream port and downstream device negotiation circuitry.

Use Value: 0.7 Ω typical RDS(ON) keeps conduction loss below 630 mW at 3 A, avoiding thermal derating in sealed enclosures.

Use Scenario: LED lighting control and sensor biasing in door modules and mirror assemblies operating across -40°C to +125°C.

IC Role / Device Role / Timing Role: Load switch for 12 V auxiliary rails with integrated thermal shutdown behavior via RDS(ON) drift tracking.

Use Value: RDS(ON) variation <±15% over -40°C to +125°C ensures stable current delivery; qualified to AEC-Q101 for automotive production.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMP21D6UFD-7 Same package and pinout; RDS(ON) = 1.5 Ω @ VGS = -4.5 V (vs. 1.0 Ω); VGS(TH) = -1.2 V max Higher on-resistance increases conduction loss by ~50% at 300 mA; suitable where gate drive voltage ≥ -5 V is available Select when cost sensitivity outweighs efficiency requirements and higher VGS is acceptable
DMG1012T-7 Same X1-DFN1212-3 package; RDS(ON) = 0.9 Ω @ VGS = -4.5 V; VGS(TH) = -0.7 V typ but not AEC-Q101 qualified Lacks automotive qualification; lower VGS(TH) improves low-voltage drive margin but unverified for automotive temperature cycling Prefer for consumer IoT where AEC-Q101 is unnecessary and tighter gate threshold is beneficial

Compared with DMP21D5UFD-7, DMP21D6UFD-7 trades efficiency for cost in non-automotive applications, while DMG1012T-7 offers slightly better RDS(ON) and VGS(TH) but lacks automotive reliability validation - making DMP21D5UFD-7 the only option meeting both low-threshold drive and AEC-Q101 requirements.

Availability

DMP21D5UFD-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and automotive body electronics requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMP21D5UFD-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The DMP21D5UFD-7 belongs to Diodes' "X1-DFN" ultra-compact MOSFET product line, engineered specifically for space-constrained, high-efficiency power switches in battery-powered and automotive applications where low gate threshold and AEC-Q101 compliance are mandatory.

FAQ

Is DMP21D5UFD-7 suitable for high-frequency switching above 1 MHz?

Yes - with Ciss = 46.1 pF and Qg = 0.5 nC at VGS = -4.5 V, the device supports clean switching up to 2 MHz in buck converters when paired with a 1-Ω gate driver. Measured tF = 19.2 ns confirms minimal tail current, reducing overlap loss in hard-switched topologies.

What is the maximum continuous drain current at 85°C ambient?

At TA = +85°C, the device supports -400 mA continuous drain current when mounted on a 1-inch² copper pad (RθJA = 140 °C/W). Derating follows linear junction temperature limits: TJ must remain ≤ +150°C, resulting in ID = -400 mA at +85°C ambient and -250 mA at +125°C ambient.

Does the DMP21D5UFD-7 require external gate resistors for stability?

No external gate resistor is required for basic stability - the low Qg and Ciss minimize ringing. However, a 2–10 Ω series resistor is recommended to dampen parasitic oscillation in layouts with >5 mm gate trace length or when driving from high-impedance sources like GPIO pins without dedicated drivers.

Can DMP21D5UFD-7 be used in reverse-polarity protection circuits?

Yes - configured as a high-side switch with source tied to input and drain to load, it blocks reverse current when VIN is reversed. The body diode conducts forward during normal operation, and the MOSFET's -20 V VDSS rating provides margin against 12 V automotive load dump transients when combined with appropriate TVS clamping.

DMP21D5UFD-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Rds On (Max) @ Id, Vgs:
1Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.8 nC @ 8 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
46.1 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
400mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1212-3

DMP21D5UFD-7 FAQ

1.How can I place an order for DMP21D5UFD-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP21D5UFD-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP21D5UFD-7 reliable?

The price and inventory of DMP21D5UFD-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP21D5UFD-7 is usually 5 days.

3.What payment methods are accepted for DMP21D5UFD-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP21D5UFD-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP21D5UFD-7?

DMP21D5UFD-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP21D5UFD-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP21D5UFD-7?

For technical support, including DMP21D5UFD-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP21D5UFD-7 requirements.

6.How does Aetrix verify that DMP21D5UFD-7 is sourced from the original manufacturer or authorized distributors?

All DMP21D5UFD-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP21D5UFD-7 meets industry standards.

7.What is the process for return or replacement of DMP21D5UFD-7?

All DMP21D5UFD-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP21D5UFD-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP21D5UFD-7 part is unused and in its original packaging.

Return procedure for DMP21D5UFD-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP21D5UFD-7 Tags

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