Diodes Incorporated DMP21D6UFB4-7B

Overview

DMP21D6UFB4-7B from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in a 1.0mm × 0.6mm X2-DFN1006-3 package, optimized for low-voltage load switching in space-constrained portable electronics. It delivers R_DS(ON) = 0.67Ω @ V_GS = −4.5V, −0.58A continuous drain current at +25°C, and features ESD-protected gate, −1.0V gate threshold voltage, and fast switching (t_F = 19.2ns).

For engineers reviewing the DMP21D6UFB4-7B datasheet, DMP21D6UFB4-7B pinout, DMP21D6UFB4-7B application, or DMP21D6UFB4-7B equivalent, this page provides verified package mapping, terminal roles, thermal performance under PCB layout conditions, and validated alternatives for compact DC-DC power path control.

Technical Context

This MOSFET operates as a single-polarity high-side or low-side switch in battery-powered systems, with gate threshold voltage (−0.5 to −1.0V) enabling direct interface with 1.8V/2.5V logic. Its ultra-small footprint and 0.4mm profile support integration into wearables and thin mobile accessories where board area and height are constrained.

The device exhibits normalized R_DS(ON) variation of ≤1.6× over −55°C to +150°C, and its dynamic parameters-C_iss = 46.1pF, Q_G = 0.5nC @ V_GS = −4.5V-support efficient gate drive with minimal Miller effect in 1–10MHz switching applications.

Key Specifications

Pinout & Package

Package: X2-DFN1006-3 (1.0mm × 0.6mm × 0.4mm), molded green compound, NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMN2016LFG-7 and AO3401, DMP21D6UFB4-7B uniquely balances sub-1Ω on-resistance, 0.4mm profile, and 0.6mm² footprint-making it the sole option for load switching in devices with Z-height <0.6mm and board area <1.0mm² per switch.

Availability

DMP21D6UFB4-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery protection, USB-C port power delivery, and medical wearable sensor hub applications requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMP21D6UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This device belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space- and height-constrained portable electronics where traditional SOT packages cannot fit.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The DMP21D6UFB4-7B has a rated junction temperature range of −55°C to +150°C. At +70°C ambient with thermal vias, its continuous drain current drops to −0.47A due to R_θJA = 128°C/W derating; at +25°C with minimal pads, it supports −0.58A with R_θJA = 240°C/W. Thermal simulation using Figure 7 and Figure 13 is recommended for precise derating.

Can this MOSFET be used in reverse-battery protection circuits?

Yes-the integrated body diode enables reverse-polarity protection when configured as a high-side switch with source tied to battery positive. With V_SD = −1.2V at −300mA and R_DS(ON) = 0.67Ω, it achieves <150mW dissipation at 0.5A, making it suitable for 2-cell Li-ion (≤8.4V) applications without external diodes.

Is the exposed drain pad electrically isolated or must it be connected to drain potential?

The exposed pad is internally connected to the drain terminal and must be soldered to a PCB copper pour tied to the drain net. It serves both thermal conduction and electrical connection-leaving it floating or grounding it will cause catastrophic failure due to internal shorting and thermal runaway.

Does the gate ESD protection meet IEC 61000-4-2 Level 4 requirements?

No-while the device includes on-chip ESD protection rated to HBM ≥2kV (per JEDEC JESD22-A114), it does not specify IEC 61000-4-2 contact or air discharge ratings. For systems requiring Level 4 (8kV contact / 15kV air), external TVS diodes such as D3V3M1U2LP-7 are recommended on the gate line.