Diodes Incorporated DMP2200UDW-7

Overview

DMP2200UDW-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT363 package, rated for -20V V_DS, 260mΩ R_DS(on) at V_GS = -4.5V, and -0.9A continuous drain current. It serves as a compact, low-loss load switch or battery disconnect device in space-constrained portable power management circuits.

For engineers reviewing the DMP2200UDW-7 datasheet, DMP2200UDW-7 pinout, DMP2200UDW-7 application, or DMP2200UDW-7 equivalent, key selection criteria include verified dual-channel P-MOSFET topology, gate-threshold stability across temperature (-0.4V to -1.2V), low input capacitance (184pF), ESD-protected gate, and SOT363 thermal performance (R_θJA = 275°C/W on FR-4).

Technical Context

This dual P-MOSFET integrates two independent enhancement-mode channels with common-source configuration and integrated gate protection diodes per channel. Each channel exhibits matched threshold voltage (V_GS(th)) and on-resistance behavior across -55°C to +150°C junction temperature range.

It operates with gate drive voltages down to -1.8V (R_DS(on) = 1000mΩ), supports fast switching (t_r = 88ns, t_f = 45ns), and maintains low leakage (I_DSS ≤ -1µA at V_DS = -16V) - enabling reliable operation in low-voltage battery-powered systems requiring bidirectional blocking and controlled turn-on/turn-off sequencing.

Key Specifications

Pinout & Package

Package: SOT363 - 6-pin ultra-small surface-mount package (2.10 × 1.30 × 0.95 mm), molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Compared with DMC2038LVT-7 and SI2301BDS-T1-GE3, DMP2200UDW-7 delivers superior thermal efficiency (275°C/W), integrated gate protection, and true matched dual-channel operation - making it optimal for space-constrained, low-leakage, and high-reliability battery management where channel correlation matters.

Availability

DMP2200UDW-7 is available at Aetrix Electronics and suitable for battery disconnect switches, USB power delivery controllers, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for DMP2200UDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The DMP2200UDW belongs to Diodes' "PowerMOS" portfolio, engineered specifically for ultra-compact, low-voltage load switching applications where gate-drive simplicity, thermal reliability, and dual-channel integration reduce bill-of-materials count.

FAQ

What is the maximum safe operating junction temperature for DMP2200UDW-7?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Derating begins at +85°C ambient for continuous operation on standard FR-4 with minimum pad layout; thermal resistance is 275°C/W (steady-state, 2oz copper). Operation above 125°C junction requires verification of R_DS(on) drift and gate threshold shift using Figure 5–7.

Can DMP2200UDW-7 be used in back-to-back configuration for AC blocking?

Yes - its dual P-channel structure and symmetric V_DS rating (-20V) allow direct implementation of back-to-back MOSFETs for bidirectional blocking without external diodes. The matched V_GS(th) and R_DS(on) ensure balanced voltage sharing; however, gate drive must maintain |V_GS| > |V_GS(th)| on both channels simultaneously to avoid shoot-through during transitions.

Does DMP2200UDW-7 require external gate resistors for EMI suppression?

No external gate resistor is required for basic switching, as its 221Ω intrinsic gate resistance (R_g) and 184pF C_iss yield natural slew rate limiting. However, for high-noise environments or strict EMC targets, a 10–47Ω series resistor at each gate improves radiated emissions by damping ringing without compromising t_r/t_f beyond 100ns.

Is the SOT363 package compatible with standard reflow profiles for lead-free assembly?

Yes - the SOT363 package is qualified for lead-free reflow per J-STD-020, with moisture sensitivity level 1 (unlimited floor life at ≤30°C/60% RH). Peak reflow temperature must not exceed 260°C for ≤30 seconds; recommended profile follows IPC/JEDEC J-STD-020D, including preheat (150–200°C), soak (180–200°C for 60–120s), and reflow (peak 235–245°C).