Diodes Incorporated DMP22D5UDA-7B

Overview

DMP22D5UDA-7B from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in an ultra-compact X2-DFN0806-6 package, rated for -20V V_DSS, 1.9Ω R_DS(ON) at V_GS = -4.5V, -350mA I_D, with gate threshold voltage ≤ -1.0V and ESD-protected gates. It serves as a low-voltage load switch or analog signal switch in space-constrained portable power management circuits.

For engineers reviewing the DMP22D5UDA-7B datasheet, DMP22D5UDA-7B pinout, DMP22D5UDA-7B application, or DMP22D5UDA-7B equivalent, key selection criteria include its sub-1V gate threshold enabling 1.8V logic compatibility, ultra-small 0.8mm × 0.6mm footprint, dual-channel integration for bidirectional signal routing or redundant switching, and guaranteed R_DS(ON) down to -1.5V gate drive.

Technical Context

This dual P-channel MOSFET integrates two independent enhancement-mode transistors sharing no internal connection-each channel operates with separate source, drain, and gate terminals. Its low V_GS(TH) (max -1.0V) ensures full enhancement under 1.8V/2.5V logic rails, while low C_iss (17pF) and fast switching (t_D(ON) = 7.3ns) support high-frequency PWM control in DC-DC converters and LED dimming.

The device uses a thermally optimized X2-DFN0806-6 package with exposed drain pads for both channels, delivering R_θJA = 346°C/W on FR-4 PCBs. Its body diode exhibits V_SD = -0.5V at -10mA, supporting reverse-current blocking and synchronous rectification in low-power buck stages.

Key Specifications

Pinout & Package

Package: X2-DFN0806-6, 0.8mm × 0.6mm × 0.36mm body, 6-terminal ultra-thin DFN with dual exposed drain pads (D1/D2), matte tin–plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Compared with DMG1012TQ-7 and AP2311W-7, DMP22D5UDA-7B delivers the smallest footprint, lowest gate threshold, and fastest switching-making it optimal for miniaturized, low-voltage, high-efficiency designs where board area and 1.8V logic compatibility are critical.

Availability

DMP22D5UDA-7B is available at Aetrix Electronics and suitable for USB-C port protection, wearable power sequencing, and low-power analog signal routing requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMP22D5UDA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.

DMP22D5UDA-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained portable electronics requiring dual-channel integration, low-voltage logic compatibility, and robust ESD performance.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

The DMP22D5UDA-7B supports -280mA continuous drain current per channel at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the X2-DFN0806-6 package on standard FR-4 PCBs with minimum pad layout; actual current capability increases with enhanced copper pour or thermal vias.

Can both channels be driven by the same gate signal?

Yes-G1 and G2 are electrically isolated but functionally identical, allowing synchronized switching of both channels using a single GPIO. However, doing so forfeits independent control; the datasheet confirms identical V_GS(TH), R_DS(ON), and dynamic parameters ensure matched turn-on/turn-off behavior under identical bias conditions.

Is the body diode direction compatible with reverse-current blocking in high-side switch configurations?

Yes-the intrinsic body diode of each P-channel MOSFET is oriented anode-to-source and cathode-to-drain, enabling effective reverse-current blocking when the device is placed between supply and load with source tied to V_IN. This configuration prevents backfeed from downstream capacitors during power-down sequences.

Does the X2-DFN0806-6 package require special reflow or inspection processes?

No-it is compatible with standard lead-free reflow profiles (J-STD-020 Class 1) and optical inspection. The package's 0.36mm height and coplanar terminals eliminate tombstoning risk; recommended stencil aperture is 0.25mm × 0.35mm with 50% area reduction for controlled solder volume and void minimization under the exposed drain pads.