Diodes Incorporated DMP22D5UDJ-7
- Part No.:
- DMP22D5UDJ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-963
- Datasheet:
-
DMP22D5UDJ-7.pdf
- Description:
- MOSFET 2P-CH 20V 0.36A SOT963
- Quantity:
- Payment:

- Shipping:

Inventory:8,090
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMP22D5UDJ-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in an ultra-small SOT963 package, designed for low-voltage power switching with RDS(ON) as low as 1.0 Ω at VGS = −4.5 V, −0.36 A continuous drain current, and gate threshold voltage ≤ −1.0 V. It serves as a compact, ESD-protected load switch in space-constrained portable electronics and battery-powered interfaces.
For engineers reviewing the DMP22D5UDJ-7 datasheet, DMP22D5UDJ-7 pinout, DMP22D5UDJ-7 application, or DMP22D5UDJ-7 equivalent, key selection criteria include its sub-1V gate threshold enabling 1.8V logic compatibility, 1mm × 1mm footprint, dual-channel integration for rail-to-rail signal routing, and guaranteed RDS(ON) performance down to VGS = −1.5 V.
Technical Context
This dual P-MOSFET integrates two identical enhancement-mode channels sharing common source terminals, optimized for bidirectional analog switching and synchronous buck high-side control. Its low Ciss (17 pF) and fast switching (tD(ON) = 7.3 ns) support efficient operation in DC-DC converters and USB port protection circuits.
The device features a fully specified gate threshold range (−0.4 V to −1.0 V), tight RDS(ON) distribution across VGS conditions, and normalized on-resistance stability over −55°C to +150°C junction temperature-critical for thermal-aware power management in wearables and IoT edge nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V: Supports input rails up to 18 V with 10% derating margin for transient spikes in portable power systems. |
| RDS(ON) Max | 1.9 Ω @ VGS = −4.5 V: Enables <100 mW conduction loss at 0.36 A, suitable for low-power always-on circuitry. |
| VGS(TH) Max | −1.0 V: Ensures full enhancement with 1.8 V GPIOs, eliminating need for level shifters in modern microcontroller interfaces. |
| ID Continuous | −0.36 A @ TA = +25°C: Rated for sustained current in compact PCB layouts using minimum FR-4 pad area per datasheet layout guidelines. |
| Ciss | 17 pF: Minimizes gate drive energy and reduces switching node ringing in high-frequency (>1 MHz) DC-DC topologies. |
| PD | 0.38 W: Limits thermal rise to <125°C junction temperature under typical 2-layer board conditions with no heatsink. |
| Package | SOT963 (1.0 mm × 1.0 mm × 0.45 mm): Enables placement in <1.2 mm pitch BGA escape zones and ultra-thin wearable flex assemblies. |
Pinout & Package
Package: SOT963 - ultra-compact 6-pin dual-source exposed-pad package with 0.35 mm pin pitch, matte tin–annealed copper leadframe, and UL 94V-0 green molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source A) | Channel A source terminal | Internally tied to Pin 4; forms common source node for dual-channel configuration in high-side switch applications. |
| 2 (Gate A) | Channel A gate control input | Accepts logic-level P-channel drive; requires negative VGS relative to source for turn-on; ESD-protected per HBM 2 kV. |
| 3 (Drain A) | Channel A power output | Carries up to −0.36 A continuous; routed to load side of power path; low RDS(ON) minimizes dropout in battery discharge paths. |
| 4 (Source B) | Channel B source terminal | Electrically common with Pin 1; enables dual independent switches sharing one reference node for rail multiplexing. |
| 5 (Gate B) | Channel B gate control input | Independent control of second channel; supports asynchronous switching or mirrored operation with external gate drivers. |
| 6 (Drain B) | Channel B power output | Provides second isolated power path; matched RDS(ON) ensures balanced current sharing in redundant supply designs. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | VGS(TH) ≤ −1.0 V ensures reliable turn-on with 1.8 V I/O domains, reducing system-level voltage translation complexity. |
| Dual-channel integration in 1 mm² | Two matched P-MOSFETs in single SOT963 package cut board area by >40% versus discrete SOT23 solutions for dual-rail control. |
| ESD-protected gate structure | HBM rating ≥2 kV eliminates need for external TVS diodes in handheld device front-end power switches. |
| Low input capacitance (Ciss) | 17 pF enables <10 ns propagation delay with standard 2 Ω gate drivers, supporting >5 MHz PWM in compact DC-DC controllers. |
| Thermally stable RDS(ON) | Normalized on-resistance variation <±15% from −55°C to +125°C ensures consistent power delivery across automotive cabin temperature ranges. |
Applications
| USB Type-C Port Protection | Wearable Battery Management |
|---|---|
|
Use Scenario: Bidirectional overvoltage/overcurrent protection for reversible USB-C connectors in smartwatches and hearables. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as back-to-back switch controlling VBUS path integrity and preventing reverse current during plug insertion/removal. Use Value: Sub-1V VGS(TH) allows direct MCU GPIO control without level-shifting; 1.0 mm² footprint preserves limited PCB real estate in sub-20 mm diameter modules. |
Use Scenario: Low-quiescent-current load switching between coin-cell backup and main Li-ion battery in medical patches. IC Role / Device Role / Timing Role: Dual P-MOSFET implements seamless battery switchover and isolated sensor biasing with independent enable control per rail. Use Value: Matched RDS(ON) ensures <5 mV voltage offset between channels; ESD protection prevents field failures during manual assembly in cleanroom environments. |
| IoT Sensor Node Power Gating | Industrial PLC Digital I/O |
|
Use Scenario: Selective power-down of MEMS accelerometers, humidity sensors, and BLE radios in battery-operated environmental monitors. IC Role / Device Role / Timing Role: Each channel independently gates power to sensor subsystems, reducing standby current to <1 µA via deep-sleep MCU control. Use Value: 1.9 Ω RDS(ON) limits voltage drop to <700 mV at 350 mA peak sensor burst current, preserving ADC reference accuracy. |
Use Scenario: Isolated 24 V DC digital input conditioning with reverse-polarity and surge protection in factory automation modules. IC Role / Device Role / Timing Role: One channel serves as polarity-correcting front-end switch; the other enables diagnostic LED drive with current limiting. Use Value: −20 V VDSS withstands 30 V transients per IEC 61000-4-5; SOT963 package allows dense placement near DIN-rail connector headers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFD-7 | Single-channel, 2.0 mm × 2.0 mm TSOP-6; RDS(ON) = 2.2 Ω @ −4.5 V; higher thermal resistance (RθJA = 150°C/W). | Requires two devices for dual functionality; larger footprint increases trace inductance in high-frequency switching. | Prefer when board space permits and individual channel thermal monitoring is needed. |
| AO6401 | Dual P-channel in TSOT-23-6; RDS(ON) = 75 mΩ @ −4.5 V but rated only to −30 V; VGS(TH) = −1.5 V max; not qualified for >85°C ambient. | Better RDS(ON) for high-current loads but unsuitable for extended temperature industrial use or 1.8 V logic drive. | Choose only for cost-sensitive consumer applications below 70°C ambient with robust 3.3 V GPIOs. |
Compared with DMN2020LFD-7 and AO6401, DMP22D5UDJ-7 uniquely balances ultra-miniaturization, 1.8 V logic compatibility, and wide-temperature reliability-making it optimal for next-generation wearables and miniaturized industrial edge nodes where footprint, low-VGS drive, and thermal robustness are jointly critical.
Availability
DMP22D5UDJ-7 is available at Aetrix Electronics and suitable for USB-C interface protection, wearable battery switchover, and IoT sensor power gating requiring stable component supply across long-lifecycle production programs.
Supply support for DMP22D5UDJ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
DMP22D5UDJ-7 belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for space-constrained, low-voltage portable electronics where minimal gate drive voltage and sub-millimeter packaging are mandatory design requirements.
FAQ
What is the maximum operating junction temperature for DMP22D5UDJ-7?
The absolute maximum junction temperature is +150°C, validated per JEDEC JESD22-A104. Thermal characterization data (Figure 6 and 7) confirms RDS(ON) remains within specification up to this limit, with normalized resistance drift <±15% across the full −55°C to +150°C range when operated within SOA boundaries.
Can DMP22D5UDJ-7 be used with 1.8 V GPIOs without level shifting?
Yes. With a maximum gate threshold voltage of −1.0 V and guaranteed turn-on at VGS = −1.5 V, the device fully enhances using standard 1.8 V microcontroller outputs referenced to its source terminal-no external level shifter is required for logic-compatible switching.
Is the SOT963 package lead-free and RoHS compliant?
Yes. DMP22D5UDJ-7 uses matte tin–annealed copper leadframe and halogen/antimony-free green molding compound, meeting EU RoHS Directive 2015/863/EU (RoHS 3), with <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony compounds.
How does the dual-channel configuration affect thermal performance?
Both channels share a common source terminal and die substrate, resulting in coupled thermal behavior. The total power dissipation limit remains 0.38 W (steady-state), and junction-to-ambient thermal resistance is specified as 330°C/W for the entire package-not per channel-requiring combined power budgeting in layout design.
DMP22D5UDJ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-963
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 360mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17pF @ 15V
- Power - Max:
- 380mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-963
DMP22D5UDJ-7 FAQ
1.How can I place an order for DMP22D5UDJ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP22D5UDJ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP22D5UDJ-7 reliable?
The price and inventory of DMP22D5UDJ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP22D5UDJ-7 is usually 5 days.
3.What payment methods are accepted for DMP22D5UDJ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP22D5UDJ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP22D5UDJ-7?
DMP22D5UDJ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP22D5UDJ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP22D5UDJ-7?
For technical support, including DMP22D5UDJ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP22D5UDJ-7 requirements.
6.How does Aetrix verify that DMP22D5UDJ-7 is sourced from the original manufacturer or authorized distributors?
All DMP22D5UDJ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP22D5UDJ-7 meets industry standards.
7.What is the process for return or replacement of DMP22D5UDJ-7?
All DMP22D5UDJ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP22D5UDJ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP22D5UDJ-7 part is unused and in its original packaging.
Return procedure for DMP22D5UDJ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP22D5UDJ-7 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

