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Diodes Incorporated DMP22D5UFB4-7B
- Part No.:
- DMP22D5UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMP22D5UFB4-7B.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-DFN1006-
- Quantity:
- Payment:
- Shipping:
Inventory:7,236
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Product details
Overview
DMP22D5UFB4-7B from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in X2-DFN1006-3 package, designed for ultra-compact load switching in portable electronics. It delivers RDS(ON) = 1.9Ω @ VGS = −4.5V, −0.4A continuous drain current at +25°C, and features ESD protection, low gate threshold (−0.4 to −1.0V), and 0.4mm profile - enabling space-constrained battery-powered USB peripherals and wearables.
For engineers reviewing the DMP22D5UFB4-7B datasheet, DMP22D5UFB4-7B pinout, DMP22D5UFB4-7B application, or DMP22D5UFB4-7B equivalent, key selection criteria include its 1.9Ω on-resistance at −4.5V, 0.6mm² footprint, thermal resistance of 272.1°C/W on standard FR-4, and suitability for low-voltage reverse-polarity protection and power gating in sub-1W DC/DC subsystems.
Technical Context
This P-channel MOSFET operates as a single high-side load switch with gate-driven turn-on below −1.0V, supporting logic-level control from 1.8V–3.3V microcontrollers. Its low Ciss (17pF) and fast switching (tD(ON) = 7.3ns, tF = 97ns) minimize gate drive loss and enable efficient pulsed operation up to 1MHz in compact DC-DC post-regulation stages.
The device integrates an ESD-protected gate structure and body diode with VSD = −1.1V @ −10mA, allowing bidirectional current handling in fault-tolerant power paths. Its RDS(ON) remains stable across −55°C to +150°C junction temperature, with normalized variation ≤1.8× at 150°C versus 25°C under −4.5V bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20V - supports input rails up to 16V with 20% margin against transients in battery-powered systems |
| RDS(ON) | 1.9Ω @ VGS = −4.5V - enables <100mW conduction loss at 230mA, critical for >90% efficiency in 3.3V load switches |
| ID (max) | −0.4A @ +25°C - sufficient for powering single-chip Bluetooth modules, sensors, or LED drivers in wearables |
| PD | 0.46W on FR-4 (2oz Cu, no vias) - defines maximum continuous power dissipation without thermal derating in minimal PCB area |
| Ciss | 17pF - reduces gate drive current requirement to <100μA for 1MHz switching, easing MCU GPIO sourcing |
| VGS(TH) | −0.4 to −1.0V - ensures reliable turn-on with 1.8V I/O logic, eliminating need for level shifters in low-voltage SoC interfaces |
| Qg | 0.3nC - limits total gate charge energy to <1.4μJ per switch cycle at −4.5V, minimizing dynamic loss in duty-cycled loads |
Pinout & Package
Package: X2-DFN1006-3 (1.0 × 0.6 × 0.4 mm), thermally enhanced leadframe with NiPdAu plating, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Connected to higher potential rail; serves as reference for gate control and body diode cathode |
| Pin 2 (Gate) | Control electrode (G) | Receives negative voltage relative to source to turn on; ESD-protected input requiring <100kΩ series resistor for robustness |
| Pin 3 (Drain) | Output terminal (D) | Switched output node; connects to load; body diode anode - conducts current toward source during reverse-bias events |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.6mm² area - fits within 1.0×0.6mm PCB real estate, enabling placement directly adjacent to ICs in 0402-class layouts |
| Low-profile height | 0.4mm max - allows integration beneath thin-film batteries or rigid-flex interposers in slim consumer devices |
| ESD protection | HBM ±2kV - eliminates need for external TVS on gate line in handheld product designs meeting IEC 61000-4-2 Level 2 |
| Lead-free & green compliance | RoHS 3 / Halogen-free (<900ppm Br+Cl, <1000ppm Sb) - satisfies EU environmental mandates without sacrificing thermal or electrical performance |
| Fast switching | tF = 97ns - reduces transition loss to <0.5% of total cycle energy at 500kHz, improving light-load efficiency in always-on subsystems |
Applications
| USB-C Port Power Switching | Wireless Sensor Node Power Gating |
|---|---|
|
Use Scenario: Selective power delivery to USB-C peripheral ports in multi-port hubs, with automatic disable during cable disconnect or overcurrent. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling VBUS path; responds to MCU GPIO within 100ns to prevent backfeed during hot-plug events. Use Value: 1.9Ω RDS(ON) limits voltage drop to <460mV at 240mA, preserving USB 2.0 signaling integrity while enabling <10ms fault response. |
Use Scenario: Periodic wake-up and sensor activation in battery-operated IoT nodes, where MCU powers down all peripherals between readings. IC Role / Device Role / Timing Role: Load switch isolating supply to accelerometer, temperature sensor, and BLE radio; controlled by low-power timer interrupt. Use Value: 0.4mm profile permits co-location with 0402 decoupling caps; 0.3nC Qg keeps wake-up energy under 200nJ, extending 10-year coin-cell life. |
| Reverse-Polarity Protection | LED Backlight Dimming Control |
|
Use Scenario: Preventing damage from incorrect battery insertion in medical diagnostic pens and portable test equipment. IC Role / Device Role / Timing Role: In-series P-MOSFET acting as ideal diode replacement; body diode blocks reverse current while RDS(ON) minimizes forward loss. Use Value: −20V VDSS withstands 18V Li-ion packs with margin; 1.9Ω on-resistance yields only 90mV drop at 47mA, avoiding thermal shutdown in sealed enclosures. |
Use Scenario: PWM-controlled dimming of white LEDs in smartwatch displays, requiring precise current regulation and minimal board area. IC Role / Device Role / Timing Role: High-side switch modulating LED anode voltage; driven by 3.3V MCU PWM with 100kHz frequency and 50% duty cycle. Use Value: Fast tF = 97ns ensures clean PWM edges without overshoot; 17pF Ciss prevents gate ringing that could cause unintended LED flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(ON) = 2.2Ω @ −4.5V; larger X2-DFN2020-6 package (2.0×2.0mm) | Higher power handling (1.2W PD) but 6.7× larger footprint | Choose when thermal budget exceeds 0.46W and PCB space allows 2mm² allocation |
| AO3401 | RDS(ON) = 45mΩ @ −4.5V but SOT-23 package (2.9×1.6mm); 13× larger footprint than DMP22D5UFB4-7B | Lower on-resistance enables >1A loads but incompatible with ultra-dense layouts | Prefer for cost-sensitive industrial controls where 0.6mm² constraint does not apply |
Compared with DMN2020LFG-7 and AO3401, DMP22D5UFB4-7B uniquely balances sub-2Ω on-resistance with 0.6mm² area - making it the only option for load switching in wearable form factors under 10mm² PCB area budget.
Availability
DMP22D5UFB4-7B is available at Aetrix Electronics and suitable for portable electronics, battery management subsystems, and ultra-compact IoT sensor nodes requiring stable component supply across long production cycles.
Supply support for DMP22D5UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for consumer, industrial, and automotive markets.
This device belongs to Diodes' X2-DFN ultra-miniature MOSFET family, engineered specifically for space-constrained portable electronics where footprint, profile, and gate-drive compatibility with low-voltage MCUs are primary design constraints.
FAQ
What is the maximum allowable gate-source voltage for DMP22D5UFB4-7B?
The absolute maximum VGS is ±8V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, keep VGS between −0.4V (threshold turn-on) and −4.5V (optimal RDS(ON)), with transient spikes clamped by external Zener or resistor-divider networks if driving from higher-voltage sources.
Can DMP22D5UFB4-7B be used in automotive applications?
No - DMP22D5UFB4-7B is not AEC-Q101 qualified. While its operating temperature range (−55°C to +150°C) meets automotive ambient requirements, it lacks PPAP documentation, IATF 16949 manufacturing certification, and stress-test validation required for automotive use. Diodes offers AEC-Q101 variants like DMP22D5UFBQ-7 for qualified applications.
How does thermal performance differ between the two power dissipation ratings (0.46W vs. 1.18W)?
The 0.46W rating applies to standard FR-4 PCB with 2oz copper and minimum pad layout; the 1.18W rating requires thermal vias to a 1-inch² copper plane on the bottom layer. This 2.6× improvement reflects practical thermal relief achievable in production boards - not theoretical die limits - and must be validated with IR imaging under actual load conditions.
Is the body diode suitable for reverse-current blocking in power-path OR-ing configurations?
Yes - the integrated body diode has VSD = −1.1V @ −10mA and supports continuous reverse current up to −0.4A. However, its forward voltage is higher than Schottky alternatives; for OR-ing applications demanding <300mV drop, pair with an external low-VF Schottky or use dedicated ideal diode controllers.
DMP22D5UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 460mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMP22D5UFB4-7B FAQ
1.How can I place an order for DMP22D5UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP22D5UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP22D5UFB4-7B reliable?
The price and inventory of DMP22D5UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP22D5UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMP22D5UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP22D5UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP22D5UFB4-7B?
DMP22D5UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP22D5UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP22D5UFB4-7B?
For technical support, including DMP22D5UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP22D5UFB4-7B requirements.
6.How does Aetrix verify that DMP22D5UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMP22D5UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP22D5UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMP22D5UFB4-7B?
All DMP22D5UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMP22D5UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP22D5UFB4-7B part is unused and in its original packaging.
Return procedure for DMP22D5UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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