Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP22D5UFB4Q-7B

Part No.:
DMP22D5UFB4Q-7B
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-XFDFN
Datasheet:
AetrixDMP22D5UFB4Q-7B.pdf
Description:
MOSFET BVDSS: 8V~24V X2-DFN1006-
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,020

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP22D5UFB4Q-7B from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in X2-DFN1006-3 package, featuring RDS(ON) = 1.9Ω @ VGS = −4.5V, ID = −0.4A, and AEC-Q101 qualification for automotive use. It serves as a compact, low-profile load switch in space-constrained portable and automotive power rails.

For engineers reviewing the DMP22D5UFB4Q-7B datasheet, DMP22D5UFB4Q-7B pinout, DMP22D5UFB4Q-7B application, or DMP22D5UFB4Q-7B equivalent, key selection criteria include gate threshold voltage (−0.4 to −1.0V), ultra-small 0.6 mm² footprint, thermal resistance (RθJA = 272.1°C/W on FR-4), and ESD protection-critical for battery-powered and infotainment subsystems.

Technical Context

This MOSFET operates in enhancement mode with negative gate control, requiring VGS ≤ −0.4V to initiate conduction and fully turning on at VGS = −4.5V. Its low RDS(ON) and fast switching (tD(ON) = 7.3 ns, tF = 97 ns) support high-efficiency DC-DC output stage and reverse-polarity protection circuits.

The integrated gate protection diode and ESD-hardened structure (±10 μA IGSS, HBM > 2 kV per datasheet) enable robust operation in noisy automotive environments. Thermal performance is defined for two mounting conditions: standard FR-4 (RθJA = 272.1°C/W) and thermally enhanced layout (RθJA = 106.2°C/W).

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −20 V - Maximum drain-source blocking voltage; defines safe operating range in 12V automotive and 5V/3.3V portable systems.
RDS(ON) 1.9 Ω @ VGS = −4.5V - Enables <100 mW conduction loss at −100 mA, critical for low-power always-on circuits.
ID (max) −0.4 A @ TA = +25°C - Supports moderate-current load switching in USB-C port protection and LED bias control.
VGS(TH) −0.4 to −1.0 V - Ensures reliable turn-on from low-voltage microcontrollers (e.g., 1.8V GPIO with level-shifting).
Qg 0.3 nC - Minimizes gate drive energy and switching losses in high-frequency PWM applications up to ~1 MHz.
Ciss 17 pF - Reduces capacitive loading on driving ICs and improves noise immunity in sensitive analog-adjacent layouts.
PD 0.46 W (FR-4) - Limits continuous power handling without thermal vias; requires careful PCB copper area planning.

Pinout & Package

Package: X2-DFN1006-3 (1.0 × 0.6 mm, 0.4 mm profile), molded green plastic, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Connected to higher potential in high-side switch configuration; ties to ground in low-side load switch.
Pin 2 (Drain) Drain terminal (D) Carries switched current to load; exposed pad (Pin 3) is electrically connected to drain for thermal and electrical integrity.
Pin 3 (Drain Pad) Thermal & electrical drain connection Must be soldered to PCB copper pour for thermal dissipation; not isolated-requires proper isolation in multi-rail designs.
Pin 4 (Gate) Gate terminal (G) Control input; low threshold enables direct drive from 1.8V/3.3V logic; ESD protection prevents latch-up during hot-plug events.

Key Features

Feature Design Value
0.6 mm² footprint 13× smaller than SOT-23-enables dense integration in wearables and camera modules where board area is premium.
0.4 mm profile Supports ultra-thin assemblies (e.g., foldable phone hinge electronics, slim automotive sensors) without mechanical interference.
AEC-Q101 qualified Validated for automotive temperature range (−55°C to +150°C) and PPAP-capable-meets Tier-1 supply chain requirements.
ESD protected (HBM) Withstands ≥2 kV human-body-model discharge-reduces need for external TVS in USB, SD card, and sensor interface paths.
Lead-free & halogen-free Complies with RoHS 3 and "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb)-supports global environmental compliance programs.

Applications

USB Port Protection Automotive Infotainment Power Switch

Use Scenario: Reverse-current and overvoltage protection for Type-C receptacles in laptops and docking stations.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling VBUS path; turned off during fault detection by system controller.

Use Value: Low RDS(ON) minimizes insertion loss (<50 mV drop at 200 mA), preserving USB PD voltage margin while enabling fast fault response.

Use Scenario: Controlled power sequencing of display backlight drivers and audio amplifiers in head units.

IC Role / Device Role / Timing Role: Load switch isolating 5V rail from MCU GPIO; coordinated with CAN-based wake-up signals.

Use Value: AEC-Q101 rating ensures reliability across thermal cycles; low gate charge allows clean edge control without slew-rate limiting.

Portable Medical Sensor Bias Smartwatch Battery Charging Path

Use Scenario: Enabling/disabling bias voltage to analog front-end (AFE) in wearable ECG patches.

IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ −1 μA) power gate activated only during measurement windows.

Use Value: Ultra-low off-state leakage extends battery life beyond 7 days; small size fits within 8 mm × 8 mm sensor module.

Use Scenario: Isolating charging IC output from battery during system sleep to prevent parasitic drain.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed between charger IC and Li-ion cell anode.

Use Value: Integrated body diode (VSD = −1.1 V) blocks reverse current without external diode; saves 0.3 mm² board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2026LFG-7 RDS(ON) = 2.2 Ω @ −4.5V; larger X1-DFN1212-3 (1.2 × 1.2 mm) package; no AEC-Q101 rating. Suitable for industrial IoT gateways but not automotive qualified designs. Select when cost is prioritized over automotive compliance and board area is less constrained.
AO3401 RDS(ON) = 45 mΩ @ −4.5V but in larger SOT-23 package; higher ID = −4.2 A; no AEC-Q101 or ESD hardening. Better for high-current DC-DC post-regulation, not ultra-compact low-ID applications. Choose only if higher current capacity and lower RDS(ON) outweigh footprint and qualification needs.

Compared with DMN2026LFG-7 and AO3401, DMP22D5UFB4Q-7B uniquely balances AEC-Q101 compliance, 0.6 mm² footprint, and −0.4A capability-making it optimal for space-limited automotive and portable designs where qualification and miniaturization are non-negotiable.

Availability

DMP22D5UFB4Q-7B is available at Aetrix Electronics and suitable for USB-C protection, automotive infotainment power switching, and portable medical sensor biasing requiring stable component supply across production lifecycles.

Supply support for DMP22D5UFB4Q-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity.

This device belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for miniaturized, high-reliability power control in automotive and portable electronics.

FAQ

What is the maximum junction temperature and how does it affect continuous operation?

The DMP22D5UFB4Q-7B has a rated junction temperature range of −55°C to +150°C. At TA = +25°C on a standard FR-4 board, its 0.46 W power dissipation limit corresponds to a ΔT of ~125°C above ambient-meaning sustained operation near 150°C requires thermal vias and copper pours. Derating begins above +70°C ambient per the −0.32 A ID rating.

Can this MOSFET be driven directly from a 1.8V GPIO without level shifting?

Yes-the gate threshold voltage range (−0.4 V to −1.0 V) ensures turn-on with 1.8V logic: applying VGS = −1.8V yields RDS(ON) = 3.4 Ω, sufficient for ≤200 mA loads. However, full enhancement (1.9 Ω) requires −4.5V, so level shifting improves efficiency in higher-current scenarios.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed pad (Pin 3) is internally connected to the drain terminal. It must be soldered to a dedicated drain-copper pour, not shared with ground. Improper isolation risks shorting the drain to adjacent ground traces or planes, especially in multi-layer boards with tight spacing.

How does the ESD protection implementation impact system-level transient testing?

The integrated ESD protection diode (rated per HBM ≥2 kV) clamps fast transients on the gate, reducing susceptibility to IEC 61000-4-2 contact discharge. However, it does not replace system-level TVS devices on power or signal lines-gate protection only covers gate-to-source/drain stress, not drain-source surges or data-line ESD.

DMP22D5UFB4Q-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-XFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.3 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
17 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
460mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN1006-3

DMP22D5UFB4Q-7B FAQ

1.How can I place an order for DMP22D5UFB4Q-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP22D5UFB4Q-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP22D5UFB4Q-7B reliable?

The price and inventory of DMP22D5UFB4Q-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP22D5UFB4Q-7B is usually 5 days.

3.What payment methods are accepted for DMP22D5UFB4Q-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP22D5UFB4Q-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP22D5UFB4Q-7B?

DMP22D5UFB4Q-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP22D5UFB4Q-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP22D5UFB4Q-7B?

For technical support, including DMP22D5UFB4Q-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP22D5UFB4Q-7B requirements.

6.How does Aetrix verify that DMP22D5UFB4Q-7B is sourced from the original manufacturer or authorized distributors?

All DMP22D5UFB4Q-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP22D5UFB4Q-7B meets industry standards.

7.What is the process for return or replacement of DMP22D5UFB4Q-7B?

All DMP22D5UFB4Q-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMP22D5UFB4Q-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP22D5UFB4Q-7B part is unused and in its original packaging.

Return procedure for DMP22D5UFB4Q-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP22D5UFB4Q-7B Tags

  • DMP22D5UFB4Q-7B
  • DMP22D5UFB4Q-7B PDF
  • DMP22D5UFB4Q-7B Datasheet
  • DMP22D5UFB4Q-7B Specifications
  • DMP22D5UFB4Q-7B Images
  • Diodes Incorporated
  • Diodes Incorporated DMP22D5UFB4Q-7B
  • Buy DMP22D5UFB4Q-7B
  • DMP22D5UFB4Q-7B Price
  • DMP22D5UFB4Q-7B Distributor
  • DMP22D5UFB4Q-7B Supplier
  • DMP22D5UFB4Q-7B Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER