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Diodes Incorporated DMP22D5UFB4Q-7R

Part No.:
DMP22D5UFB4Q-7R
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-XFDFN
Datasheet:
AetrixDMP22D5UFB4Q-7R.pdf
Description:
MOSFET BVDSS: 8V~24V X2-DFN1006-
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,516

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Product details

Overview

DMP22D5UFB4Q-7R from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in X2-DFN1006-3 package, optimized for ultra-compact power switching with RDS(ON) = 1.9Ω @ VGS = −4.5V, ID = −0.4A, and AEC-Q101 qualification for automotive use in load-switching and battery protection circuits.

For engineers reviewing the DMP22D5UFB4Q-7R datasheet, DMP22D5UFB4Q-7R pinout, DMP22D5UFB4Q-7R application, or DMP22D5UFB4Q-7R equivalent, this part supports low-voltage portable electronics where footprint (0.6 mm²), profile (0.4 mm), and low gate threshold (−0.4 to −1.0 V) are critical for space-constrained PCB layouts.

Technical Context

This P-channel MOSFET operates as a high-side load switch with gate-driven turn-on at low negative VGS, enabling direct interface with 1.8V/2.5V logic without level shifting. Its ESD-protected structure includes integrated gate protection diode and NiPdAu-plated terminals for robust solderability.

Thermal performance is defined by two RθJA values: 272.1°C/W on minimal FR-4 pad and 106.2°C/W with thermal vias-enabling design flexibility across consumer and automotive ambient conditions (−55°C to +150°C).

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −20 V: Maximum drain-source blocking voltage for 12V automotive and 5V/3.3V system rail protection.
RDS(ON) 1.9 Ω @ VGS = −4.5V: Enables <100 mW conduction loss at −100 mA, suitable for always-on battery switches.
ID (max) −0.4 A @ TA = +25°C: Supports sustained current in compact USB-C port protection and PMIC enable paths.
VGS(TH) −0.4 to −1.0 V: Ensures reliable turn-on with 1.8V GPIOs, eliminating need for external gate drivers.
Qg 0.3 nC: Low gate charge enables fast switching (tF = 97 ns) with minimal drive power in DC-DC sequencing.
Ciss 17 pF: Reduces capacitive loading on control signals in multi-MOSFET power domains.
PD 0.46 W (min pad): Sustains continuous operation in sealed enclosures without forced airflow.

Pinout & Package

Package: X2-DFN1006-3 - 1.0 × 0.6 mm, 0.4 mm height, 3-terminal leadless plastic package with exposed drain pad for thermal conduction.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for P-channel conduction Connected to system ground or higher-potential rail; ties to internal body diode anode.
2 (Gate) Control electrode for channel formation Accepts negative VGS; requires no level shifter when driven by 1.8V–3.3V logic with pull-up to VIN.
3 (Drain) Main current output terminal Exposed copper pad on bottom surface; must be soldered to PCB thermal pad for RθJA = 106.2°C/W performance.

Key Features

Feature Design Value
Footprint size 0.6 mm² - 13× smaller than SOT-23, enabling placement under connectors or near BGA packages.
Profile height 0.4 mm - compatible with stacked flex PCB assemblies and ultra-thin wearable housings.
AEC-Q101 qualification Validated for automotive temperature cycling, HTRB, and ESD (HBM ≥2 kV), supporting PPAP-compliant designs.
Green compound Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb), meeting IATF 16949 material compliance.
ESD protection Integrated gate protection diode with ±2 kV HBM rating per JESD22-A114, reducing external TVS count.

Applications

USB-C Port Protection Automotive Body Control Module

Use Scenario: Preventing reverse-current flow and overvoltage damage during hot-plug insertion of USB-C accessories in portable devices.

IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path with fast turn-off (tF = 97 ns) to limit fault energy.

Use Value: 1.9Ω RDS(ON) limits voltage drop to <200 mV at 100 mA, preserving bus regulation while occupying only 0.6 mm² PCB area.

Use Scenario: Enabling/disabling 12V accessory rails (e.g., door lock actuators, LED interior lighting) in vehicle body control units.

IC Role / Device Role / Timing Role: AEC-Q101-qualified P-channel switch providing fail-safe off-state isolation during microcontroller reset or CAN bus error frames.

Use Value: −20V VDSS and −55°C to +150°C operating range ensure reliability across engine bay and cabin environments without derating.

Smartphone Battery Disconnect Industrial Sensor Node Power Gating

Use Scenario: Isolating Li-ion battery during deep sleep or firmware update to minimize quiescent current and prevent leakage-induced capacity loss.

IC Role / Device Role / Timing Role: Always-on load switch controlled by baseband processor GPIO, leveraging −0.4V VGS(TH) for direct 1.8V logic compatibility.

Use Value: 0.3 nC Qg allows sub-microsecond switching with negligible control power, extending battery life in IoT standby modes.

Use Scenario: Power gating discrete sensors (e.g., pressure, humidity) in battery-powered industrial monitors to meet <1 µA sleep current targets.

IC Role / Device Role / Timing Role: Low-RDS(ON) switch placed between battery and sensor supply rail, activated only during measurement cycles.

Use Value: 1.9Ω RDS(ON) contributes <0.2 mW conduction loss at 10 mA, preserving >99.9% of battery energy during active sensing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2016LFG-7 RDS(ON) = 2.2Ω @ −4.5V, larger X1-DFN1006-3 (1.0 × 0.6 mm same footprint but non-exposed drain) No AEC-Q101 qualification; rated for commercial temp only (−40°C to +85°C) Select for cost-sensitive consumer designs where automotive qualification is unnecessary.
AO3415 RDS(ON) = 45mΩ @ −4.5V but in larger SOT-23 package (2.9 × 1.3 mm); higher ID = −4A Higher current capability but 13× larger footprint and no AEC-Q101 or green compound compliance Select only when >1A load current is required and board space permits SOT-23 placement.

Compared with DMN2016LFG-7 and AO3415, DMP22D5UFB4Q-7R uniquely balances AEC-Q101 compliance, 0.4 mm profile, and 0.6 mm² footprint-making it the sole choice for space-constrained automotive and portable electronics requiring production-grade reliability and green materials.

Availability

DMP22D5UFB4Q-7R is available at Aetrix Electronics and suitable for USB-C port protection, automotive body control modules, and smartphone battery disconnect circuits requiring stable component supply across long-lifecycle programs.

Supply support for DMP22D5UFB4Q-7R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets since 1964.

This device belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for footprint- and height-constrained power management in portable and automotive electronics.

FAQ

Is DMP22D5UFB4Q-7R suitable for hot-swap applications?

Yes. Its −20V VDSS, fast turn-off time (tF = 97 ns), and integrated ESD protection make it appropriate for controlled hot-swap insertion in USB-C and industrial I/O ports. The low RDS(ON) minimizes inrush voltage drop, and the AEC-Q101 qualification ensures robustness against transient stress during plug/unplug cycles.

What is the recommended PCB layout for thermal performance?

For optimal thermal resistance (RθJA = 106.2°C/W), the exposed drain pad must be connected via ≥4 thermal vias (0.3 mm diameter) to an internal or bottom-layer 1-inch² copper pour. Pad dimensions follow Diodes' X2-DFN1006-3 layout: 0.45 × 0.60 mm stencil aperture with 0.20 mm solder mask opening.

Does the gate threshold voltage shift significantly over temperature?

VGS(TH) shifts predictably: from −0.75 V at −55°C to −0.45 V at +150°C (per Figure 8, ID = −250 μA). This negative TC ensures enhanced noise immunity at low temperatures and stable turn-on margin at high temperatures-critical for automotive under-hood operation.

Can DMP22D5UFB4Q-7R replace an N-channel MOSFET in high-side switching?

No-it is a P-channel device designed for high-side switching without external driver circuitry. Replacing an N-channel high-side switch would require redesigning gate drive to deliver negative VGS. Its architecture eliminates bootstrap capacitor needs but mandates logic-level compatibility with negative gate bias relative to source.

DMP22D5UFB4Q-7R Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-XFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.3 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
17 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
460mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN1006-3

DMP22D5UFB4Q-7R FAQ

1.How can I place an order for DMP22D5UFB4Q-7R through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP22D5UFB4Q-7R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP22D5UFB4Q-7R reliable?

The price and inventory of DMP22D5UFB4Q-7R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP22D5UFB4Q-7R is usually 5 days.

3.What payment methods are accepted for DMP22D5UFB4Q-7R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP22D5UFB4Q-7R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP22D5UFB4Q-7R?

DMP22D5UFB4Q-7R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP22D5UFB4Q-7R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP22D5UFB4Q-7R?

For technical support, including DMP22D5UFB4Q-7R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP22D5UFB4Q-7R requirements.

6.How does Aetrix verify that DMP22D5UFB4Q-7R is sourced from the original manufacturer or authorized distributors?

All DMP22D5UFB4Q-7R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP22D5UFB4Q-7R meets industry standards.

7.What is the process for return or replacement of DMP22D5UFB4Q-7R?

All DMP22D5UFB4Q-7R units undergo pre-shipment inspection (PSI). If there is an issue with DMP22D5UFB4Q-7R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP22D5UFB4Q-7R part is unused and in its original packaging.

Return procedure for DMP22D5UFB4Q-7R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP22D5UFB4Q-7R Tags

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