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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP22M2UPS-13

Name: DMP22M2UPS-13
Brand: Diodes Incorporated
SKU: DMP22M2UPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP22M2UPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMP22M2UPS-13.pdf

Description:: MOSFET P-CH 20V 60A PWRDI5060-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMP22M2UPS-13 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, rated for -60A continuous drain current at TC = +25°C, with R_DS(ON) of 2.5 mΩ @ V_GS = -10V and 3.5 mΩ @ V_GS = -4.5V. It serves as a high-current load switch in notebook battery power management systems where low conduction loss and thermal efficiency are critical.

For engineers reviewing the DMP22M2UPS-13 datasheet, DMP22M2UPS-13 pinout, DMP22M2UPS-13 application, or DMP22M2UPS-13 equivalent, key selection criteria include verified R_DS(ON) performance at -4.5V gate drive, junction-to-case thermal resistance of 0.9°C/W, SOA compliance up to 100µs pulses, and PowerDI5060-8 footprint compatibility with thin-profile PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining fast switching characteristics: t_D(ON) = 14.2 ns, t_D(OFF) = 361 ns, and Q_g = 476 nC at V_GS = -10V. Its body diode exhibits V_SD = -0.58 V @ I_S = -5A and t_RR = 137 ns under IF = -10A / di/dt = 100 A/µs conditions.

The device operates across -55°C to +150°C junction temperature range, with normalized R_DS(ON) variation ≤1.6× over that range at V_GS = -4.5V. Thermal design is supported by R_θJC = 0.9°C/W and transient thermal impedance data for pulse-width-dependent derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20 V - Maximum blocking voltage in off-state; defines safe operating ceiling for battery-side switching in 3S Li-ion systems.
R_DS(ON)	2.5 mΩ @ V_GS = -10V - Enables <120 mW conduction loss at -25A, critical for thermally constrained notebook battery FETs.
I_D (continuous)	-60 A @ T_C = +25°C - Confirmed steady-state current capability when mounted on high-copper thermal pad per JEDEC standards.
Q_g	476 nC @ V_GS = -10V - Determines gate driver strength requirement; impacts turn-on energy and switching loss in high-frequency load switching.
R_θJC	0.9°C/W - Enables direct heatsink attachment via exposed drain paddle; supports >100 W power dissipation with minimal junction rise.
t_RR	137 ns - Body diode recovery time constrains minimum dead-time in synchronous buck or OR-ing configurations.
V_GS(TH)	-0.5 to -1.4 V - Ensures robust turn-on with standard logic-level gate drivers down to -4.5V, reducing external level-shifter need.

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain paddle. Dimensions: 5.15 × 6.15 × 1.0 mm (L × W × H), 0.97 g mass, RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All eight pins connect internally to the exposed drain paddle - provides low-inductance, high-current path and primary thermal conduction path to PCB copper.
Source (pins S1–S3)	Source terminal (internal parallel connection)	Three dedicated source leads minimize source inductance and improve current sharing in high-di/dt load-switch transients.
Gate (pin G)	Control input	Single gate terminal with 4.2 Ω intrinsic gate resistance - stabilizes switching edge rates and reduces EMI without external gate resistor.

Key Features

Feature	Design Value
Thermally efficient PowerDI5060-8 package	0.9°C/W junction-to-case resistance enables direct thermal coupling to inner-layer copper planes without discrete heatsinks.
Low R_DS(ON) at -4.5V gate drive	3.5 mΩ ensures <250 mW conduction loss at -20A - critical for battery-side switches driven by 5V or 3.3V controllers.
Ultra-low profile (<1.1 mm height)	Enables integration into space-constrained ultrabook battery packs and slim power modules where Z-height is limited.
Lead-free, halogen- and antimony-free "Green" construction	Complies with RoHS 3 (2015/863/EU) and automotive change-control requirements per Diodes' AEC-Q200-aligned manufacturing.

Applications

Notebook Battery Protection Circuit

USB-C Power Delivery Load Switch

Use Scenario: Bidirectional battery disconnect in 3-cell Li-ion laptop packs during overvoltage, overcurrent, or thermal fault events.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlled by battery management IC (e.g., BQ series) with active-low enable signal.

Use Value: 2.5 mΩ R_DS(ON) limits voltage drop to <65 mV at 26A peak discharge, preserving system runtime and enabling accurate coulomb counting.

Use Scenario: Input power path control in USB-C PD sink devices requiring 20V/5A capability and reverse-current blocking.

IC Role / Device Role / Timing Role: Primary power switch between Type-C receptacle and system rail, supporting hot-plug sequencing and fault isolation.

Use Value: 137 ns body diode t_RR and low Q_rr (221 nC) reduce shoot-through risk during dynamic bus voltage transitions in PD negotiation.

Industrial 24V DC Power OR-ing

Hot-Swap Controller Backplane FET

Use Scenario: Redundant 24V supply OR-ing in programmable logic controllers where two independent SMPS feeds share common load.

IC Role / Device Role / Timing Role: Low-loss forward-path switch with integrated body diode used for passive OR-ing; no external controller required.

Use Value: -0.58 V V_SD at -5A minimizes forward drop vs. Schottky alternatives, improving efficiency by >1.2% at full load.

Use Scenario: Inrush current limiting and fault isolation in modular backplane systems with hot-pluggable cards.

IC Role / Device Role / Timing Role: Main power FET in discrete hot-swap circuit, driven by dedicated controller (e.g., LTC4215) for soft-start and current limiting.

Use Value: 100A pulsed drain rating (I_DM) supports 200% overload tolerance during card insertion transients without SOA violation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LPS-13	R_DS(ON) = 4.0 mΩ @ -4.5V; lower I_D = -50A; same PowerDI5060-8 package	Higher conduction loss at mid-range loads; suitable where peak current <50A and cost sensitivity outweighs efficiency gain	Select when thermal margin allows higher R_DS(ON) and BOM cost reduction is prioritized over 0.5 mΩ optimization.
SI7157DP-T1-GE3	R_DS(ON) = 2.8 mΩ @ -4.5V; SO-8 package; R_θJA = 62°C/W (vs. 55°C/W)	Limited thermal performance in high-power density layouts; requires larger PCB copper area for equivalent cooling	Choose only if existing SO-8 footprint reuse is mandatory and system ambient temperature remains <60°C.

Compared with DMT6009LPS-13 and SI7157DP-T1-GE3, DMP22M2UPS-13 delivers the lowest R_DS(ON) at -4.5V in its class and superior thermal resistance - making it optimal for compact, high-current battery switches where board space and thermal headroom are constrained.

Availability

DMP22M2UPS-13 is available at Aetrix Electronics and suitable for notebook battery protection circuits, USB-C PD load switching, industrial 24V OR-ing, and hot-swap controller backplane FETs requiring stable component supply and long-term lifecycle support.

Supply support for DMP22M2UPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The PowerDI® MOSFET product line targets high-efficiency, space-constrained power management applications - specifically engineered for low R_DS(ON), fast switching, and thermally robust packaging in computing, industrial, and consumer power systems.

FAQ

What is the maximum allowable gate-source voltage for DMP22M2UPS-13?

The absolute maximum V_GS rating is ±12 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to -10 V (for full enhancement) or -4.5 V (for logic-level compatibility), with transient spikes suppressed using Zener diodes or RC snubbers.

Can DMP22M2UPS-13 be used in avalanche mode?

Yes - it is rated for I_AS = -37 A and E_AS = 69.8 mJ with L = 0.1 mH, confirming ruggedness for inductive load switching. However, avalanche operation must be strictly limited to single-pulse, non-repetitive events; repeated avalanche stress degrades R_DS(ON) and threshold voltage over time.

Is the PowerDI5060-8 (Type K) package compatible with standard reflow profiles?

Yes - it is qualified for IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and supports standard lead-free reflow profiles (peak 260°C, 60-second duration). The matte tin annealed finish ensures solderability per MIL-STD-202, Method 208, and the green molding compound meets UL 94V-0 flammability requirements.

Does DMP22M2UPS-13 require external gate resistors for EMI control?

Not necessarily - its intrinsic gate resistance is 4.2 Ω, which inherently damps ringing and moderates dv/dt. For most notebook battery switch applications, no external resistor is needed. However, in high-noise environments or when driving from weak gate drivers, a 5–10 Ω series resistor may further suppress EMI without compromising switching speed.

DMP22M2UPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 476 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 12826 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8 (Type K)

DMP22M2UPS-13 FAQ

1.How can I place an order for DMP22M2UPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP22M2UPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP22M2UPS-13 reliable?

The price and inventory of DMP22M2UPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP22M2UPS-13 is usually 5 days.

3.What payment methods are accepted for DMP22M2UPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP22M2UPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP22M2UPS-13?

DMP22M2UPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP22M2UPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP22M2UPS-13?

For technical support, including DMP22M2UPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP22M2UPS-13 requirements.

6.How does Aetrix verify that DMP22M2UPS-13 is sourced from the original manufacturer or authorized distributors?

All DMP22M2UPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP22M2UPS-13 meets industry standards.

7.What is the process for return or replacement of DMP22M2UPS-13?

All DMP22M2UPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP22M2UPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP22M2UPS-13 part is unused and in its original packaging.

Return procedure for DMP22M2UPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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