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Diodes Incorporated DMP25H18DLFDE-13
- Part No.:
- DMP25H18DLFDE-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMP25H18DLFDE-13.pdf
- Description:
- MOSFET P-CH 250V 260MA 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,818
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Product details
Overview
DMP25H18DLFDE-13 from Diodes Incorporated is a 250V P-channel enhancement-mode MOSFET in U-DFN2020-6 package, with RDS(ON) = 14 Ω @ VGS = −10 V, ID = −0.26 A at TA = +25°C, and 0.6 mm profile-designed for low-profile load switching and battery management circuits in portable power systems.
For engineers reviewing the DMP25H18DLFDE-13 datasheet, DMP25H18DLFDE-13 pinout, DMP25H18DLFDE-13 application, or DMP25H18DLFDE-13 equivalent, key selection criteria include verified −250 V VDSS, low gate threshold (−0.5 to −2.5 V), thermal resistance of 191 °C/W on FR-4, and confirmed U-DFN2020-6 footprint compatibility with space-constrained PCB layouts.
Technical Context
This P-channel MOSFET operates as a high-side load switch with gate-controlled conduction in DC power paths where reverse polarity protection and low quiescent current are required. Its −250 V breakdown voltage and 14 Ω on-resistance at −10 V gate drive enable robust operation in 12–48 V industrial and battery-backed systems.
The device features a low 0.6 mm height and 4 mm² PCB footprint, optimized for thin-profile consumer electronics and wearables. Its gate threshold range (−0.5 to −2.5 V) supports direct interfacing with 3.3 V and 5 V logic without level-shifting, while its body diode forward voltage (−0.8 to −1.2 V) is characterized for reverse-current blocking in battery backup configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −250 V - Withstands up to 250 V drain-source reverse bias before avalanche, suitable for 48 V nominal bus protection. |
| RDS(ON) | 14 Ω @ VGS = −10 V - Delivers ≤260 mW conduction loss at −200 mA, enabling thermally constrained designs. |
| ID (max) | −0.26 A @ TA = +25°C - Continuous current rating for steady-state load switching in low-power subsystems. |
| VGS(TH) | −0.5 to −2.5 V - Ensures turn-on with standard 3.3 V GPIO, eliminating need for external gate drivers. |
| PD | 0.6 W - Power dissipation limit on standard FR-4 board with minimal copper, defining thermal derating envelope. |
| RθJA | 191 °C/W - Junction-to-ambient thermal resistance under baseline layout; dictates temperature rise per watt. |
| Ciss | 81 pF - Input capacitance at VDS = −25 V, directly affecting gate drive energy and switching speed. |
Pinout & Package
Package: U-DFN2020-6 (Type E), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D) | Drain | Main current-carrying terminal; connected to high-side supply rail in load-switch configuration. |
| Pin 2 (S) | Source | Reference node for gate control; tied to load side or ground depending on high/low-side topology. |
| Pin 3 (G) | Gate | Control input; requires negative VGS relative to source to turn on P-channel device. |
| Pin 4 (D) | Drain (tied internally) | Second drain connection for enhanced current handling and thermal spreading via dual-drain layout. |
| Pin 5 (S) | Source (tied internally) | Second source connection improving bond-wire reliability and reducing source inductance. |
| Pin 6 (EP) | Exposed Pad | Thermal and electrical connection to PCB ground plane; mandatory for achieving rated RθJA. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm) | Enables integration into <1 mm-thick handheld devices and stacked PCB assemblies without mechanical interference. |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or SOT-23 packages, supporting miniaturized power rails. |
| Low gate threshold (−0.5 to −2.5 V) | Permits direct drive from microcontroller GPIOs operating at 1.8 V, 3.3 V, or 5 V logic levels. |
| Lead-free & halogen-free | Fully RoHS 3 compliant with <900 ppm Br+Cl and <1000 ppm Sb, meeting automotive and medical environmental standards. |
| U-DFN2020-6 thermal vias support | Enables 86 °C/W RθJA with 2 oz copper and thermal vias-critical for sustained −0.21 A operation at +70°C ambient. |
Applications
| Battery Backup Switching | USB Port Power Control |
|---|---|
|
Use Scenario: Seamless switchover between main supply and Li-ion battery during AC loss in portable medical monitors. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as OR-ing switch with reverse-polarity protection and fast turn-off (<100 ns fall time). Use Value: Prevents backfeed into failed supply rail and maintains system uptime within 10 µs of primary failure detection. |
Use Scenario: Per-port 5 V power enable/disable in multi-port USB-C hub with overcurrent fault isolation. IC Role / Device Role / Timing Role: Load switch controlling VBUS delivery; gate driven by USB PD controller's enable signal. Use Value: Limits inrush current to <50 mA and blocks fault currents exceeding −0.23 A at VGS = −3.5 V. |
| Industrial Sensor Node Power Gating | Low-Power IoT Edge Device |
|
Use Scenario: Duty-cycled power delivery to analog front-end (AFE) and ADC in battery-powered vibration sensor nodes. IC Role / Device Role / Timing Role: Low-quiescent-current (ISS ≤ −1 µA) P-MOSFET enabling microamp-level sleep mode current budgets. Use Value: Extends 2000 mAh coin-cell life from 6 to >18 months by cutting AFE leakage to <100 nA when disabled. |
Use Scenario: Voltage-domain isolation between BLE SoC and peripheral sensors in wearable fitness tracker. IC Role / Device Role / Timing Role: Logic-level-compatible load switch isolating 3.3 V domain during deep-sleep cycles. Use Value: Achieves <1 µA total system shutdown current using −2.5 V VGS(TH) margin and low IDSS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LKQ-7 | VDSS = −20 V, RDS(ON) = 2.2 Ω @ −4.5 V, ID = −4.5 A - higher current, lower voltage rating. | Targeted at 5–12 V logic-supply domains; unsuitable for 24–48 V industrial rails due to VDSS limitation. | Select only for low-voltage, high-current load switching where thermal headroom exceeds 1.5 W. |
| Si2301DDS-T1-GE3 | VDSS = −20 V, RDS(ON) = 0.13 Ω @ −4.5 V, ID = −3 A - orders-of-magnitude lower RDS(ON), same package. | Optimized for high-efficiency 3.3/5 V power rails; lacks −250 V capability and fails at >25 V drain stress. | Choose when minimizing conduction loss dominates over voltage rating, and system VIN ≤ 15 V. |
Compared with DMN2004LKQ-7 and Si2301DDS-T1-GE3, DMP25H18DLFDE-13 uniquely balances ultra-high voltage tolerance (−250 V), compact U-DFN2020-6 form factor, and logic-level gate drive-making it irreplaceable in space-limited, medium-current, high-voltage load switching where alternatives either sacrifice voltage rating or footprint efficiency.
Availability
DMP25H18DLFDE-13 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and industrial sensor node power gating requiring stable component supply across extended product lifecycles.
Supply support for DMP25H18DLFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-voltage, low-footprint load switching in portable, industrial, and automotive-qualified power management subsystems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMP25H18DLFDE-13 supports −0.21 A continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under standard FR-4 mounting with minimum pad layout; use of thermal vias and 2 oz copper increases this to −0.26 A at +70°C per Note 6.
Does this MOSFET require a gate resistor for stability?
A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 4 pF) and PCB trace inductance. The datasheet confirms stable switching with RG = 50 Ω in timing measurements (tR, tF), and omission may cause overshoot exceeding ±40 V VGS rating.
Can the exposed pad be left floating?
No-the exposed pad (Pin 6) must be soldered to a PCB thermal pad connected to ground or power plane. Leaving it unconnected degrades RθJA from 191 °C/W to >300 °C/W, risking thermal runaway above 150 mW dissipation and violating JEDEC moisture sensitivity requirements.
Is this part qualified for automotive applications?
The DMP25H18DLFDE-13 is not AEC-Q101 qualified. Diodes Incorporated explicitly states that automotive-grade versions require separate PPAP-capable part numbers and IATF 16949 manufacturing; this variant is intended for commercial and industrial use only.
DMP25H18DLFDE-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.8 nC @ 10 V
- Vgs (Max):
- ±40V
- Input Capacitance (Ciss) (Max) @ Vds:
- 81 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMP25H18DLFDE-13 FAQ
1.How can I place an order for DMP25H18DLFDE-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP25H18DLFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP25H18DLFDE-13 reliable?
The price and inventory of DMP25H18DLFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP25H18DLFDE-13 is usually 5 days.
3.What payment methods are accepted for DMP25H18DLFDE-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP25H18DLFDE-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP25H18DLFDE-13?
DMP25H18DLFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP25H18DLFDE-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP25H18DLFDE-13?
For technical support, including DMP25H18DLFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP25H18DLFDE-13 requirements.
6.How does Aetrix verify that DMP25H18DLFDE-13 is sourced from the original manufacturer or authorized distributors?
All DMP25H18DLFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP25H18DLFDE-13 meets industry standards.
7.What is the process for return or replacement of DMP25H18DLFDE-13?
All DMP25H18DLFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP25H18DLFDE-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP25H18DLFDE-13 part is unused and in its original packaging.
Return procedure for DMP25H18DLFDE-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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