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Diodes Incorporated DMP25H18DLFDE-7
- Part No.:
- DMP25H18DLFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMP25H18DLFDE-7.pdf
- Description:
- MOSFET P-CH 250V 260MA 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:14,315
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Product details
Overview
DMP25H18DLFDE-7 from Diodes Incorporated is a 250V P-channel enhancement-mode MOSFET in U-DFN2020-6 package, featuring RDS(ON) = 14 Ω @ VGS = −10 V, ID = −0.26 A at TA = +25°C, and ultra-low 0.6 mm profile. It serves as a compact, low-threshold load switch in space-constrained battery management and power sequencing circuits.
For engineers reviewing the DMP25H18DLFDE-7 datasheet, DMP25H18DLFDE-7 pinout, DMP25H18DLFDE-7 application, or DMP25H18DLFDE-7 equivalent, key selection criteria include verified −250 V VDSS, gate threshold of −1.7 V (typ), 0.6 W power dissipation on FR-4, and compatibility with 3.3 V/5 V logic-level control in low-current switching roles.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for high-voltage blocking and low gate charge (Qg = 2.8 nC), enabling fast turn-on (tD(ON) = 7.5 ns) and controlled switching in low-duty-cycle power paths. Its −2.5 V maximum VGS(TH) ensures reliable enhancement-mode turn-on with standard microcontroller GPIOs.
The device integrates a body diode with VSD = −0.8 V (typ) at IS = −200 mA and exhibits Ciss = 81 pF and Coss = 14 pF at VDS = −25 V, supporting stable operation in bidirectional current paths where reverse conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −250 V - supports input rails up to 200 V DC with 25% safety margin in industrial power supplies |
| RDS(ON) | 14 Ω @ VGS = −10 V - delivers ≤3.6 mW conduction loss at ID = −200 mA |
| ID (max) | −0.26 A @ TA = +25°C - suitable for sub-300 mA load switching in portable electronics |
| VGS(TH) | −1.7 V (typ) - enables full enhancement with 3.3 V logic without level-shifting circuitry |
| PD | 0.6 W on FR-4 - requires no thermal pad or heatsink in ambient temperatures ≤70°C |
| Ciss | 81 pF - limits gate drive current demand to <100 µA for 1 MHz switching |
| RθJA | 191 °C/W - junction-to-ambient rise is ~115°C at full rated power on minimal PCB copper |
Pinout & Package
U-DFN2020-6 (Type E) package with 0.6 mm height, 2.0 × 2.0 mm footprint, and NiPdAu-plated copper leadframe. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts −10 V max VGS; 13 Ω gate resistance limits ringing |
| 2 (S) | Source | Reference node for gate drive; connects to system ground or positive rail in high-side configuration |
| 3 (D) | Drain | High-voltage output node; rated for −250 V continuous blocking; bonded to exposed thermal pad |
| 4 (S) | Source | Second source connection; paralleled internally with Pin 2 to reduce package inductance |
| 5 (D) | Drain | Second drain connection; paralleled internally with Pin 3 to improve current sharing and thermal path |
| 6 (D) | Drain | Third drain connection; tied to internal die drain metallization and thermal pad for enhanced heat transfer |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile packaging | 0.6 mm height enables use in ultra-thin wearables and stacked PCB assemblies |
| Logic-level gate drive | VGS(TH) ≤ −2.5 V ensures turn-on with 3.3 V MCU outputs without external biasing |
| Green compound construction | Halogen- and antimony-free molding compound meets IEC 61249-2-21 and RoHS 3 compliance |
| Thermally enhanced layout | Three drain terminals and dual source terminals reduce package resistance by ≥25% vs. standard DFN-6 |
| Low gate charge | Qg = 2.8 nC minimizes driver power loss and enables >1 MHz switching in PWM dimming |
Applications
| Battery Protection Circuit | USB-C Power Path Control |
|---|---|
|
Use Scenario: Reverse-current blocking and overvoltage cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path; activated during fault detection. Use Value: −250 V VDSS withstands surge transients up to ±150 V; 14 Ω RDS(ON) limits self-heating during sustained 200 mA load current. |
Use Scenario: Directional power flow management between USB-C port and system rail in portable chargers. IC Role / Device Role / Timing Role: Load switch isolating VBUS from system during cable insertion/removal events. Use Value: 0.6 mm profile fits under USB-C receptacle; −1.7 V VGS(TH) allows direct control from USB PD controller GPIO. |
| Industrial Sensor Node Power Gating | Medical Wearable Power Sequencing |
|
Use Scenario: Scheduled power cycling of analog front-end ICs in battery-powered condition monitoring sensors. IC Role / Device Role / Timing Role: Low-leakage enable switch turning on/off sensor supply rail under MCU command. Use Value: IDSS ≤ −1 µA at VDS = −250 V prevents standby current drain; 4 mm² footprint conserves limited PCB area. |
Use Scenario: Controlled power-up sequence for multi-rail biosignal acquisition modules in patch-style ECG monitors. IC Role / Device Role / Timing Role: Independent rail switch coordinating analog, digital, and RF subsystem activation timing. Use Value: 0.6 W power rating supports 100% duty cycle at 230 mA; RoHS 3/Green compliance satisfies medical device material declarations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN25H18DLFDE-7 | N-channel counterpart with identical RDS(ON) and package; requires high-side gate driver or bootstrap circuitry | Used only in low-side switching configurations; unsuitable for direct replacement in high-side battery disconnect | Select only when topology permits N-channel placement and gate drive resources are available |
| AO3401 | Lower VDSS (−30 V), higher ID (−4.2 A), larger SOT-23 package; RDS(ON) = 55 mΩ @ −4.5 V | Applicable only in ≤24 V systems; incompatible with 200 V transient environments due to voltage rating gap | Choose for cost-sensitive 12 V/24 V applications where space constraints are less stringent |
Compared with DMN25H18DLFDE-7 and AO3401, DMP25H18DLFDE-7 uniquely balances 250 V blocking capability, logic-level gate drive, and 0.6 mm height-making it the sole option for high-voltage, space-limited, high-side load switching without auxiliary drive circuitry.
Availability
DMP25H18DLFDE-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power path control, and industrial sensor node power gating requiring stable component supply across extended production lifecycles.
Supply support for DMP25H18DLFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' high-voltage logic-level MOSFET product line, engineered specifically for compact, high-reliability load switching in battery-powered and industrial power management systems.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMP25H18DLFDE-7 supports −0.21 A continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the U-DFN2020-6 package on standard FR-4 PCB without thermal vias or copper pours.
Does this MOSFET require a gate resistor for stability?
A series gate resistor of 10–47 Ω is recommended to dampen ringing caused by the 13 Ω intrinsic gate resistance interacting with PCB trace inductance and Ciss. No external pull-down is needed due to its enhancement-mode behavior and −100 nA IGSS leakage.
Can DMP25H18DLFDE-7 be used in linear regulation mode?
No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows only single-pulse capability down to 100 µs; sustained operation above 0.1 A at >10 V VDS exceeds thermal limits and risks permanent damage.
Is the U-DFN2020-6 package compatible with standard reflow profiles?
Yes-the device is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 seconds max). The NiPdAu finish ensures solderability per MIL-STD-202 Method 208 without oxidation concerns.
DMP25H18DLFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.8 nC @ 10 V
- Vgs (Max):
- ±40V
- Input Capacitance (Ciss) (Max) @ Vds:
- 81 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMP25H18DLFDE-7 FAQ
1.How can I place an order for DMP25H18DLFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP25H18DLFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP25H18DLFDE-7 reliable?
The price and inventory of DMP25H18DLFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP25H18DLFDE-7 is usually 5 days.
3.What payment methods are accepted for DMP25H18DLFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP25H18DLFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP25H18DLFDE-7?
DMP25H18DLFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP25H18DLFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP25H18DLFDE-7?
For technical support, including DMP25H18DLFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP25H18DLFDE-7 requirements.
6.How does Aetrix verify that DMP25H18DLFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMP25H18DLFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP25H18DLFDE-7 meets industry standards.
7.What is the process for return or replacement of DMP25H18DLFDE-7?
All DMP25H18DLFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP25H18DLFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP25H18DLFDE-7 part is unused and in its original packaging.
Return procedure for DMP25H18DLFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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