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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP26M1UFG-7

Name: DMP26M1UFG-7
Brand: Diodes Incorporated
SKU: DMP26M1UFG-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP26M1UFG-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMP26M1UFG-7.pdf

Description:: MOSFET BVDSS: 8V~24V POWERDI3333

Quantity:: RFQ Add To RFQ list

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Inventory:1,970

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Product details

Overview

DMP26M1UFG-7 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for -71A continuous drain current at TC = +25°C, with R_DS(ON) of 5.5mΩ at V_GS = -4.5V and -15A, optimized for high-efficiency load switching in compact DC/DC power rails and battery protection circuits.

For engineers reviewing the DMP26M1UFG-7 datasheet, DMP26M1UFG-7 pinout, DMP26M1UFG-7 application, or DMP26M1UFG-7 equivalent, key selection criteria include its low on-resistance at low gate drive (-2.5V compatible), thermally efficient exposed-drain package, and validated performance in high-density portable and industrial power management systems.

Technical Context

This P-channel MOSFET operates as a high-side load switch with gate threshold voltage (V_GS(TH)) between -0.4V and -1.0V, enabling robust turn-on with standard logic-level controllers. Its R_DS(ON) remains stable across junction temperatures up to +150°C, supported by R_θJC = 3.0°C/W and R_θJA = 41°C/W (with 1-inch² copper plate).

Dynamic parameters include Q_g = 75nC at V_GS = -4.5V and t_F = 107ns, confirming fast switching capability suitable for synchronous buck converters and hot-swap controllers. The integrated body diode exhibits V_SD = -0.7V to -1.1V at -10A, supporting bidirectional current handling in reverse-polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20V - Withstands up to 20V reverse drain-source voltage without breakdown in load-switch or battery-protection configurations.
R_DS(ON)	5.5mΩ @ V_GS = -4.5V, -15A - Enables <100mW conduction loss at 7A, critical for thermal budget in space-constrained PCBs.
I_D (continuous)	-71A @ T_C = +25°C - Supports high-current rail switching when mounted on thermally enhanced copper pads.
Q_g	75nC @ V_GS = -4.5V - Determines gate drive energy requirement; enables efficient operation with low-power microcontroller GPIOs.
R_θJC	3.0°C/W - Confirms direct thermal path from junction to case via exposed drain pad, essential for accurate thermal modeling.
t_F	107ns - Fall time measured under V_DD = -10V, I_D = -10A, defining minimum dead-time requirements in half-bridge designs.

Pinout & Package

Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–4 and 6–8 are source terminals; pin 5 is gate; drain connected to underside thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Source (S)	Seven parallel source connections reduce bond-wire inductance and improve current sharing in high-di/dt load-switch applications.
5	Gate (G)	Single gate input with R_G = 2.05Ω - Enables predictable turn-on/turn-off timing without external gate resistor in most 3.3V/5V control schemes.
Drain (exposed pad)	Drain (D)	Thermally and electrically connected to PCB copper pour - primary heat dissipation path and main high-current output node.

Key Features

Feature	Design Value
Low R_DS(ON) at -2.5V gate drive	7.5mΩ @ -2.5V, -10A - Ensures reliable turn-on with 2.5V logic or battery-voltage-referenced controllers in portable systems.
PowerDI3333-8 footprint	33% board area vs. SO-8 - Reduces PCB real estate by >65mm², enabling higher component density in USB-C PD adapters and wearables.
Exposed drain thermal pad	R_θJC = 3.0°C/W - Delivers 2.3× better thermal resistance than comparable SO-8 MOSFETs, allowing sustained -50A operation with minimal heatsinking.
Halogen- and antimony-free "Green" construction	<900ppm Br, <900ppm Cl, <1000ppm Sb - Meets IPC-1752A Class 3 material declarations for automotive and medical OEM compliance.

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse-polarity and overcurrent protection in 2-cell Li-ion battery packs for power tools and medical devices.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling battery-to-load connection; gate driven by dedicated protection IC (e.g., DW01A) with 1ms response.

Use Value: 5.5mΩ R_DS(ON) limits voltage drop to <40mV at 7A, preserving battery runtime and minimizing thermal rise in sealed enclosures.

Use Scenario: 20V/5A power path switching in USB-C PD 3.0 sink applications requiring programmable voltage negotiation.

IC Role / Device Role / Timing Role: Load switch isolating VBUS from system rails during CC logic handshaking; controlled by PD controller (e.g., FUSB302) GPIO.

Use Value: Fast 107ns fall time ensures clean VBUS ramp-down during disconnect, preventing bus contention and meeting USB-IF EMI limits.

Industrial PLC I/O Module

Automotive Body Control Module

Use Scenario: 24V DC load switching for solenoid drivers and LED indicators in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch managed by isolated microcontroller output; supports PWM dimming at 1kHz with minimal shoot-through risk.

Use Value: -71A rating allows derated use at 30A with 50°C ambient, ensuring long-term reliability under continuous industrial duty cycles.

Use Scenario: Reverse-battery protection and accessory power gating in 12V vehicle subsystems (e.g., infotainment display backlighting).

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and load, activated only when ignition signal is present and polarity is correct.

Use Value: Gate threshold range (-0.4V to -1.0V) guarantees turn-on even with aged battery voltage (down to 10.5V), preventing false shutdowns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT2001UFDF-7	R_DS(ON) = 6.2mΩ @ -4.5V, -15A; lower I_D = -50A; same PowerDI3333-8 package	Slightly higher conduction loss at full load; reduced thermal margin above 40A continuous	Select when cost sensitivity outweighs peak current demand and board layout allows minor efficiency trade-off.
Si7157DP-T1-GE3	R_DS(ON) = 4.8mΩ @ -4.5V, -15A; higher Q_g = 92nC; SO-8 package with inferior R_θJA = 62°C/W	Larger footprint (2× board area); slower switching due to higher gate charge; requires larger gate driver	Prefer only if legacy SO-8 compatibility is mandatory and thermal headroom exceeds 25°C above ambient.

Compared with DMT2001UFDF-7 and Si7157DP-T1-GE3, DMP26M1UFG-7 delivers the lowest R_DS(ON) in its class with superior thermal performance and smallest footprint-making it optimal for next-generation compact, high-current power switches where efficiency and size are co-constrained.

Availability

DMP26M1UFG-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial PLC I/O modules requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for DMP26M1UFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

DMP26M1UFG-7 belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density load switching in portable, industrial, and automotive power systems where low R_DS(ON) and thermal performance are critical.

FAQ

What is the maximum safe operating temperature for DMP26M1UFG-7?

The device has an operating junction temperature range of -55°C to +150°C. Under continuous DC conditions with 1-inch² copper on FR-4, its thermal resistance R_θJA is 41°C/W. At 3.0W power dissipation, this yields a 123°C rise above ambient-so maximum ambient must be ≤27°C for safe 150°C junction operation. Derating curves in Figure 7 confirm stable R_DS(ON) up to 150°C.

Can DMP26M1UFG-7 be used in avalanche mode?

Yes-it is rated for single-pulse avalanche energy E_AS = 71mJ and current I_AS = 37A with L = 0.1mH, per Note 8. This capability supports inductive load switching in relay drivers and motor controls where flyback energy must be safely clamped without external snubbers.

Is the PowerDI3333-8 package lead-free and RoHS-compliant?

Yes-DMP26M1UFG-7 is fully lead-free and compliant with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU. Its matte tin annealed terminals meet MIL-STD-202 solderability requirements, and the molding compound is halogen- and antimony-free (<900ppm Br+Cl, <1000ppm Sb), certified "Green" per Diodes' definitions.

How does the multiple-source-pin configuration affect PCB layout?

The seven-source pins (1,2,3,4,6,7,8) require symmetric fan-out traces to minimize current imbalance and parasitic inductance. Recommended layout uses equal-length, ≥0.5mm-wide copper traces connecting all source pins to a common ground plane, avoiding daisy-chaining. The exposed drain pad must be soldered to ≥100mm² of inner-layer copper for optimal thermal performance.

DMP26M1UFG-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 164 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 5392 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.67W (Ta), 3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMP26M1UFG-7 FAQ

1.How can I place an order for DMP26M1UFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP26M1UFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP26M1UFG-7 reliable?

The price and inventory of DMP26M1UFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP26M1UFG-7 is usually 5 days.

3.What payment methods are accepted for DMP26M1UFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP26M1UFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP26M1UFG-7?

DMP26M1UFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP26M1UFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP26M1UFG-7?

For technical support, including DMP26M1UFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP26M1UFG-7 requirements.

6.How does Aetrix verify that DMP26M1UFG-7 is sourced from the original manufacturer or authorized distributors?

All DMP26M1UFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP26M1UFG-7 meets industry standards.

7.What is the process for return or replacement of DMP26M1UFG-7?

All DMP26M1UFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP26M1UFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP26M1UFG-7 part is unused and in its original packaging.

Return procedure for DMP26M1UFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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