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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP26M1UPS-13

Name: DMP26M1UPS-13
Brand: Diodes Incorporated
SKU: DMP26M1UPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP26M1UPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMP26M1UPS-13.pdf

Description:: MOSFET BVDSS: 8V~24V POWERDI5060

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMP26M1UPS-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for -20V V_DSS, 6 mΩ R_DS(ON) @ V_GS = -4.5V, and -90A continuous drain current at T_C = +25°C. It serves as a high-current load switch in notebook battery power management circuits where low conduction loss and thermal efficiency are critical.

For engineers reviewing the DMP26M1UPS-13 datasheet, DMP26M1UPS-13 pinout, DMP26M1UPS-13 application, or DMP26M1UPS-13 equivalent, key selection criteria include its ultra-low R_DS(ON) at logic-level gate drive (-2.5V), 100% UIS-tested ruggedness, <1.1 mm profile for thin end equipment, and thermally optimized exposed-drain PowerDI5060-8 package.

Technical Context

This MOSFET employs trench-gate technology to achieve low on-resistance while maintaining fast switching performance (t_F = 107 ns, t_D(OFF) = 69 ns) and robust unclamped inductive switching capability (E_AS = 47 mJ). Its gate threshold voltage of -0.4 to -1.0 V enables reliable turn-on with standard logic-level controllers.

The device integrates an intrinsic body diode with V_SD = -0.54 V @ I_S = -1 A and t_RR = 54 ns, supporting synchronous rectification and reverse recovery in bidirectional power paths. Thermal resistance R_θJC = 1.7 °C/W ensures efficient heat transfer from junction to PCB copper pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-20 V - Maximum blocking voltage in off-state; suitable for 12–19 V battery rail switching.
R_DS(ON)	6 mΩ @ V_GS = -4.5 V - Enables ≤0.54 W conduction loss at 90 A, minimizing thermal stress in high-current load switches.
I_D (continuous)	-90 A @ T_C = +25°C - Supports high-power notebook battery disconnect and hot-swap functions without external heatsinking.
Q_g	75 nC @ V_GS = -4.5 V - Low gate charge reduces driver power and enables fast turn-on with minimal Miller plateau delay.
R_θJC	1.7 °C/W - Direct thermal path from die to exposed drain pad allows >2.7 W power dissipation on 1-inch² copper area.
E_AS	47 mJ - Confirmed avalanche energy rating ensures survivability during inductive load transients in battery protection circuits.
t_RR	54 ns - Fast body diode recovery supports efficient reverse current handling in DC-DC converter freewheeling paths.

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced surface-mount package with exposed drain pad for low R_θJC; 1.0 mm nominal height; RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (D)	Internally connected to exposed metal pad; primary current-carrying and thermal conduction path to PCB.
7	Source (S)	Common return node for load current; referenced to system ground in high-side switch configurations.
8	Gate (G)	Control terminal requiring negative V_GS to enhance channel; low input capacitance (C_iss = 5392 pF) eases driver design.

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	6 mΩ @ -4.5 V enables <0.5 W loss at 90 A, reducing board-level heating in compact battery management modules.
100% UIS tested	Guaranteed avalanche ruggedness (I_AS = -30 A, E_AS = 47 mJ) eliminates need for external snubbers in inductive load switching.
Thermally optimized package	PowerDI5060-8 delivers R_θJC = 1.7 °C/W - 2.6× better than SO-8 - enabling higher current density without derating.
Logic-level compatible	V_GS(TH) range (-0.4 to -1.0 V) ensures full enhancement with -2.5 V gate drive, simplifying controller interface in space-constrained designs.
Green construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A environmental compliance requirements.

Applications

Notebook Battery Protection Circuit

USB-C Power Delivery Load Switch

Use Scenario: Isolating main battery from system during fault conditions (overvoltage, short circuit) or deep discharge.

IC Role / Device Role: High-side P-channel MOSFET acting as bidirectional current-blocking switch controlled by battery management IC.

Use Value: 6 mΩ R_DS(ON) minimizes voltage drop across switch during normal operation, preserving battery runtime and enabling accurate Coulomb counting.

Use Scenario: Enabling/disabling 20 V/5 A USB-C PD power path between source and sink under firmware control.

IC Role / Device Role: Primary load switch in PD controller reference design, handling up to 100 W with minimal insertion loss.

Use Value: 100% UIS qualification ensures safe interruption of inductive PD bus transients without clamping diodes or TVS devices.

Industrial 24 V Hot-Swap Module

Thin-Profile Tablet Power Sequencing

Use Scenario: Controlled insertion of 24 V backplane cards into live power rails with inrush current limiting.

IC Role / Device Role: Main pass transistor in hot-swap controller IC feedback loop, regulating ramp rate and fault shutdown.

Use Value: R_θJC = 1.7 °C/W allows sustained 72 A operation at T_C = +70°C on standard FR-4, eliminating need for thermal vias or heatsinks.

Use Scenario: Sequential power-up of SoC, memory, and display subsystems in sub-8 mm thick tablets.

IC Role / Device Role: Compact, low-profile load switch enabling independent domain control with <1.1 mm Z-height constraint.

Use Value: PowerDI5060-8's 1.0 mm max height fits within mechanical stackup while delivering -90 A capability - unmatched in comparable thin packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LSD-13	R_DS(ON) = 9.5 mΩ @ -4.5 V; SO-8 package; R_θJA = 62 °C/W (vs. 45 °C/W for DMP26M1UPS-13 on same board).	Larger footprint and higher thermal resistance limit continuous current to -50 A at T_C = +70°C.	Select when SO-8 compatibility or legacy layout reuse is required; avoid for >60 A or <1.2 mm height constraints.
SiR626DP-T1-GE3	R_DS(ON) = 5.2 mΩ @ -4.5 V; PowerPAK® SO-8L; R_θJC = 1.5 °C/W but requires larger exposed pad (6.2 × 5.0 mm vs. 4.9 × 5.8 mm).	Higher cost and tighter layout tolerance due to asymmetric pad geometry; no integrated 100% UIS test data published.	Prefer for margin-critical 90+ A applications where 0.8 mΩ lower R_DS(ON) justifies added layout complexity and cost.

Compared with DMT6009LSD-13 and SiR626DP-T1-GE3, DMP26M1UPS-13 uniquely balances ultra-low R_DS(ON), industry-leading thermal performance in a low-profile package, and production-validated avalanche robustness - making it optimal for next-gen thin, high-power portable systems.

Availability

DMP26M1UPS-13 is available at Aetrix Electronics and suitable for notebook battery protection, USB-C power delivery load switching, and industrial hot-swap modules requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for DMP26M1UPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, computing, and industrial markets.

DMP26M1UPS-13 belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage load switching in space-constrained portable electronics where thermal efficiency and reliability under transient stress are paramount.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMP26M1UPS-13 supports -72 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1 inch²) and thermal via implementation beneath the exposed drain pad to maintain junction temperature below 150°C.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. The device's R_g = 2.05 Ω (typical) and Q_gd/Q_gs ratio of ~2.9 indicate moderate Miller effect; a 4.7 Ω series resistor ensures clean switching without compromising t_R/t_F.

Can DMP26M1UPS-13 be used in synchronous rectification?

Yes - its body diode exhibits V_SD = -0.54 V @ -1 A and t_RR = 54 ns at T_J = 25°C, enabling use in low-voltage synchronous buck converters. However, external FET control is required since it lacks integrated gate driver or bootstrap circuitry.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes - the PowerDI5060-8 package is qualified for lead-free reflow per J-STD-020, with Moisture Sensitivity Level 1. Standard peak temperatures up to 260°C are supported; solder paste volume and stencil aperture must follow Diodes' recommended pad layout (D1 = 4.90 mm, E1 = 5.80 mm) to ensure void-free thermal pad wetting.

DMP26M1UPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 164 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 5392 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.34W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMP26M1UPS-13 FAQ

1.How can I place an order for DMP26M1UPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP26M1UPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP26M1UPS-13 reliable?

The price and inventory of DMP26M1UPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP26M1UPS-13 is usually 5 days.

3.What payment methods are accepted for DMP26M1UPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP26M1UPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP26M1UPS-13?

DMP26M1UPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP26M1UPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP26M1UPS-13?

For technical support, including DMP26M1UPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP26M1UPS-13 requirements.

6.How does Aetrix verify that DMP26M1UPS-13 is sourced from the original manufacturer or authorized distributors?

All DMP26M1UPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP26M1UPS-13 meets industry standards.

7.What is the process for return or replacement of DMP26M1UPS-13?

All DMP26M1UPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP26M1UPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP26M1UPS-13 part is unused and in its original packaging.

Return procedure for DMP26M1UPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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