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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP26M1UPSW-13

Name: DMP26M1UPSW-13
Brand: Diodes Incorporated
SKU: DMP26M1UPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP26M1UPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMP26M1UPSW-13.pdf

Description:: MOSFET BVDSS: 8V~24V PowerDI5060

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMP26M1UPSW-13 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in POWERDI®5060-8 (Type UX) package, optimized for high-current load switching and DC-DC power management. It delivers 6 mΩ R_DS(on) at V_GS = −4.5 V, supports −83 A continuous drain current at T_C = +25°C, and features low input capacitance (5392 pF) and fast switching (t_F = 107 ns), enabling efficient hot-swap and battery protection circuits.

For engineers reviewing the DMP26M1UPSW-13 datasheet, DMP26M1UPSW-13 pinout, DMP26M1UPSW-13 application, or DMP26M1UPSW-13 equivalent, key selection criteria include verified R_DS(on) at −2.5 V/−4.5 V, thermal resistance (R_θJC = 2.0°C/W), body diode forward voltage (−0.7 to −1.1 V), and PowerDI®5060-8 terminal layout compatibility with thin-profile PCBs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust switching performance. Its gate threshold voltage range (−0.4 V to −1.0 V) ensures reliable turn-on with standard logic-level drive, and its low Q_gd (19.8 nC) minimizes Miller-induced switching losses in high-frequency synchronous buck stages.

The device integrates an intrinsic body diode with t_RR = 54 ns and Q_RR = 55 nC, supporting bidirectional current handling in OR-ing and reverse-polarity protection applications. Thermal design leverages the exposed drain pad for direct heat transfer to PCB copper, enabled by R_θJC = 2.0°C/W and 1.1 mm profile.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−20 V: Maximum drain-source blocking voltage for 12 V rail protection and USB PD sink-side switches.
R_DS(on)	6 mΩ @ V_GS = −4.5 V: Enables <100 mW conduction loss at 40 A, critical for high-efficiency load switches.
I_D	−83 A @ T_C = +25°C: Supports high-current power rails in server VRMs and industrial motor drivers.
C_iss	5392 pF @ V_DS = −10 V: Low input capacitance reduces gate drive power and improves EMI behavior in 500 kHz–1 MHz converters.
t_F	107 ns: Fast fall time enables tight dead-time control in half-bridge topologies without shoot-through risk.
R_θJC	2.0°C/W: Enables >2 W power dissipation with minimal junction-to-pad temperature rise, simplifying thermal layout.
V_SD	−0.7 to −1.1 V @ I_S = −10 A: Low body diode forward drop reduces reverse conduction loss in OR-ing and back-to-back switch configurations.

Pinout & Package

Package: POWERDI®5060-8 (Type UX), surface-mount, thermally enhanced plastic case with exposed drain pad. Dimensions: 5.15 × 6.40 × 1.10 mm (L × W × H), UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts −4.5 V to −10 V logic-level drive for full enhancement; RG = 2.05 Ω limits ringing.
Pins 2, 3, 5, 6, 7, 8 (D)	Drain (common)	High-current output path tied to exposed copper pad; carries full load current and dissipates heat directly to PCB.
Pins 4 & S (marked on top view)	Source	Reference node for gate drive and current sensing; connects to system ground or negative rail in high-side switch configurations.

Key Features

Feature	Design Value
Thermally efficient package	POWERDI®5060-8 exposes drain pad for direct PCB thermal coupling, achieving R_θJC = 2.0°C/W - 3× better than SO-8 equivalents.
Low R_DS(on) at low V_GS	8 mΩ @ V_GS = −2.5 V enables use with 3.3 V GPIO or battery-powered controllers without level-shifting.
Fast switching with low Q_gd	Q_gd = 19.8 nC minimizes Miller plateau duration, reducing switching transition time and associated losses.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and consumer environmental mandates.

Applications

USB Type-C Power Delivery Sink

Industrial 24 V Hot-Swap Controller

Use Scenario: Bidirectional power path control in USB-C receptacles where reverse polarity and overcurrent must be blocked during plug insertion.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as active reverse-voltage and overcurrent protection switch, driven by dedicated PD controller.

Use Value: 6 mΩ R_DS(on) limits voltage drop to <250 mV at 40 A, preserving PD 3.0 20 V/5 A capability while enabling <1 ms fault response via integrated current sense.

Use Scenario: Inrush current limiting and fault isolation for modular PLC I/O cards powered from shared 24 V backplane.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream field modules; coordinated with eFuse IC for overcurrent shutdown.

Use Value: −83 A rating and 107 ns t_F support rapid current-limiting action, preventing bus collapse during short-circuit events on distributed I/O nodes.

Server VRM High-Side Switch

Battery-Powered Medical Monitor Power Path

Use Scenario: High-current phase-leg switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ >100 A).

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side position, commutated at 500 kHz–1 MHz with precise gate timing.

Use Value: 5392 pF C_iss and 2.05 Ω R_G enable clean gate waveform integrity, reducing switching loss by ≥15% vs. comparable SO-8 MOSFETs at 1 MHz.

Use Scenario: Dual-battery OR-ing and backup switchover in portable diagnostic ultrasound units requiring uninterrupted operation during battery replacement.

IC Role / Device Role / Timing Role: Back-to-back P-channel pair configured for ideal diode behavior and reverse-current blocking.

Use Value: −0.7 V V_SD and 54 ns t_RR minimize conduction loss and prevent cross-conduction during switchover, extending runtime by >8% versus Schottky-based solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LPS-13	R_DS(on) = 9.5 mΩ @ −4.5 V; larger SO-8 package (R_θJA = 50°C/W vs. 47°C/W); higher C_iss (6500 pF)	Less suitable for space-constrained thin devices; requires larger thermal pad area	Select when legacy SO-8 footprint compatibility is required and 30% higher R_DS(on) is acceptable.
Si7157DP-T1-GE3	R_DS(on) = 5.8 mΩ @ −4.5 V; same POWERDI-5060-8 footprint; lower Q_g (62 nC vs. 75 nC)	Better suited for ultra-high-frequency (>2 MHz) switching due to reduced gate charge	Select when minimizing gate drive loss dominates over cost, and sub-100 ns t_F is mandatory.

Compared with DMT6009LPS-13 and Si7157DP-T1-GE3, DMP26M1UPSW-13 offers the best balance of ultra-low R_DS(on), compact thermal profile, and proven reliability in high-current load-switch deployments - especially where board thickness ≤1.2 mm is constrained.

Availability

DMP26M1UPSW-13 is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, industrial hot-swap controllers, and server VRM high-side switching applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for DMP26M1UPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP26M1UPSW belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current power management in space- and thermally-constrained applications such as portable electronics, industrial automation, and data center infrastructure.

FAQ

What is the maximum safe operating temperature for DMP26M1UPSW-13?

The device has a specified operating junction temperature range of −55°C to +150°C. Under continuous DC operation at −83 A, thermal design must ensure T_J remains ≤150°C using the R_θJC = 2.0°C/W path to PCB copper. Derating is required above T_C = +25°C per the datasheet's ID vs. TC curve.

Can DMP26M1UPSW-13 be used in a high-side switch configuration with 3.3 V logic control?

Yes - its V_GS(th) range (−0.4 V to −1.0 V) and R_DS(on) = 8 mΩ at V_GS = −2.5 V allow full enhancement from a 3.3 V microcontroller GPIO driving a simple inverting level shifter or charge pump. No external gate driver is needed for ≤10 A loads.

Does DMP26M1UPSW-13 have avalanche rating, and is it suitable for inductive switching?

Yes - it is rated for I_AS = −33 A and E_AS = 57 mJ under L = 0.1 mH conditions. This makes it suitable for controlled inductive turn-off in relay drivers and solenoid controls, provided layout minimizes stray inductance and snubbing is applied per application requirements.

Is the POWERDI®5060-8 package compatible with standard reflow profiles for lead-free assembly?

Yes - the device is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260°C. Its moisture sensitivity level is 1, eliminating bake requirements. The matte tin finish ensures reliable solderability using standard SAC305 paste and Type 3 or finer stencils.

DMP26M1UPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 164 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 5392 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta), 2.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMP26M1UPSW-13 FAQ

1.How can I place an order for DMP26M1UPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP26M1UPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP26M1UPSW-13 reliable?

The price and inventory of DMP26M1UPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP26M1UPSW-13 is usually 5 days.

3.What payment methods are accepted for DMP26M1UPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP26M1UPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP26M1UPSW-13?

DMP26M1UPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP26M1UPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP26M1UPSW-13?

For technical support, including DMP26M1UPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP26M1UPSW-13 requirements.

6.How does Aetrix verify that DMP26M1UPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMP26M1UPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP26M1UPSW-13 meets industry standards.

7.What is the process for return or replacement of DMP26M1UPSW-13?

All DMP26M1UPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP26M1UPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP26M1UPSW-13 part is unused and in its original packaging.

Return procedure for DMP26M1UPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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