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Diodes Incorporated DMP26M7UFG-13
- Part No.:
- DMP26M7UFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMP26M7UFG-13.pdf
- Description:
- MOSFET P-CH 20V 18A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,929
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Product details
Overview
DMP26M7UFG-13 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in POWERDI®3333-8 package, optimized for high-efficiency load switching with 6.7mΩ RDS(ON) at VGS = −4.5V, −40A continuous drain current at TC = +25°C, and thermally efficient 6.8°C/W RθJC. It serves as a low-loss power path switch in battery-powered portable electronics and USB-C PD power delivery circuits.
For engineers reviewing the DMP26M7UFG-13 datasheet, DMP26M7UFG-13 pinout, DMP26M7UFG-13 application, or DMP26M7UFG-13 equivalent, key selection criteria include gate threshold voltage (−0.4 to −1.0V), avalanche energy rating (28mJ), body diode forward voltage (−0.7 to −1.2V), and thermal resistance profile under pulsed and steady-state conditions.
Technical Context
This P-channel MOSFET operates in enhancement mode with negative gate-source control logic, enabling high-side switching without level-shifting circuitry. Its low RDS(ON) and fast switching dynamics (tD(ON) = 10.7ns, tD(OFF) = 121ns) support high-frequency DC-DC converter synchronous rectification and hot-swap control.
The device integrates a robust intrinsic body diode rated for −2.2A continuous forward current and exhibits controlled reverse recovery (QRR = 47nC, tRR = 60ns), making it suitable for bidirectional power flow applications such as USB Type-C port protection and battery backup switchover.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20V - maximum drain-source blocking voltage for 3.3V/5V system-level rail isolation |
| RDS(ON) | 6.7mΩ @ VGS = −4.5V - enables ≤67mW conduction loss at 10A load current |
| ID (TC = +25°C) | −40A - supports high-current load switching with external heatsinking on PCB copper plane |
| Qg | 75nC @ VGS = −4.5V - determines gate drive power requirement and switching speed in PWM control |
| RθJC | 6.8°C/W - allows junction temperature rise of ≤68°C at 10W dissipation, critical for thermal design margin |
| EAS | 28mJ - specifies single-pulse unclamped inductive switching capability for relay/snubberless designs |
Pinout & Package
Package: POWERDI®3333-8 - surface-mount, thermally enhanced 8-pin leadframe package with exposed drain pad; dimensions 3.30 × 3.30 × 0.80 mm; UL 94V-0 molded compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All eight pins are internally connected to drain terminal; provides low-inductance, high-current path and thermal conduction to PCB copper |
| 4 (Source) | Source (S) | Pin 4 is dedicated source connection; used for gate drive reference and current return path in high-side configuration |
| 8 (Gate) | Gate (G) | Pin 8 controls channel conduction; requires negative VGS relative to source to turn on; ESD-protected (1kV HBM) |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 6.7mΩ at −4.5V ensures <67mW conduction loss at 10A, reducing thermal stress in compact layouts |
| Thermally optimized package | POWERDI3333-8 delivers 6.8°C/W RθJC, enabling 41W power dissipation at TC = +25°C |
| Small board footprint | Occupies only 33% of SO-8 area (10.9 mm² vs. 33 mm²), supporting ultra-dense portable PCBs |
| Robust body diode | −2.2A continuous forward current and 47nC QRR support bidirectional power routing without external diode |
Applications
| USB-C Power Delivery Switch | Battery Protection Circuit |
|---|---|
|
Use Scenario: High-side switching of 5–20V power rails in USB-C receptacles with dynamic voltage negotiation. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch controlling VBUS path integrity during CC logic handshake. Use Value: Low RDS(ON) minimizes insertion loss across variable PD voltages; fast turn-off prevents fault propagation during overvoltage events. |
Use Scenario: Reverse-current blocking and overcurrent cutoff between Li-ion battery packs and system loads. IC Role / Device Role / Timing Role: High-side protection switch placed between battery anode and load, controlled by battery management IC. Use Value: −20V VDSS withstands battery stack transients; 28mJ EAS absorbs inductive kickback during fuseless shutdown. |
| Hot-Swap Controller | DC-DC Synchronous Rectifier |
|
Use Scenario: Inrush-limited power-up of modular subsystems in industrial PLC backplanes or telecom line cards. IC Role / Device Role / Timing Role: Controlled high-side switch activated after soft-start ramp completes and bus voltage stabilizes. Use Value: Gate threshold range (−0.4 to −1.0V) ensures reliable turn-on with standard logic-level drivers; 1kV HBM ESD rating improves field reliability. |
Use Scenario: Secondary-side synchronous rectification in isolated 12V-to-3.3V flyback converters for PoE-powered endpoints. IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode to reduce conduction losses in discontinuous conduction mode. Use Value: Body diode VSD = −0.7V enables zero-voltage switching assist; low Qg (75nC) reduces gate driver losses at 250kHz operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(ON) = 45mΩ @ −4.5V; smaller SOT-23 package; lower ID = −4.2A | Suitable for sub-1A portable accessories; insufficient for >5A load switching | Select when board space is constrained and current demand is ≤3A; avoid for high-power USB-C or battery paths. |
| SI2301DS-T1-GE3 | RDS(ON) = 115mΩ @ −4.5V; SOT-23-3 package; ID = −2.7A; no avalanche rating | Targeted at low-cost, low-current logic-level switching; lacks ESD and ruggedness specs | Choose only for cost-sensitive consumer IoT nodes with <1A loads and no transient immunity requirements. |
Compared with DMG2305U-7 and SI2301DS-T1-GE3, DMP26M7UFG-13 delivers 6.7× lower RDS(ON) than SI2301DS and 6.8× higher current capability than DMG2305U, while maintaining industry-leading thermal performance in its class.
Availability
DMP26M7UFG-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery protection systems, hot-swap controller boards, and DC-DC synchronous rectifier designs requiring stable component supply and long-term production continuity.
Supply support for DMP26M7UFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for power management, signal integrity, and connectivity applications.
DMP26M7UFG-13 belongs to Diodes' POWERDI® high-current MOSFET product line, engineered specifically for thermally demanding, space-constrained power switching in portable and industrial electronics.
FAQ
What is the maximum allowable gate-source voltage for DMP26M7UFG-13?
The absolute maximum VGS rating is ±10V per the datasheet's Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to −4.5V to −10V for full enhancement, with −2.5V providing usable conduction (RDS(ON) = 9.0mΩ) in low-voltage control scenarios.
Can DMP26M7UFG-13 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(ON) (shown in Figure 6) ensures inherent current sharing when paralleled. Designers must match gate drive impedance and PCB layout symmetry to minimize dynamic imbalance; thermal coupling via shared copper pour further enhances stability under high-current loads.
Does DMP26M7UFG-13 require a gate resistor in typical load-switch applications?
A gate resistor (typically 10–100Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 728pF) and PCB trace inductance. Without it, overshoot can exceed ±10V, risking gate oxide failure. The resistor also controls dV/dt during turn-on to prevent false triggering of downstream logic.
How does the body diode performance compare to discrete Schottky diodes in reverse polarity protection?
The intrinsic body diode has VSD = −0.7V at −10A (Figure 9), comparable to medium-performance Schottky diodes but with higher leakage (<1µA). Its key advantage is integration - eliminating discrete components and PCB area - though discrete Schottkys may offer lower VF (<0.4V) in ultra-low-loss designs where space permits.
DMP26M7UFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 6.7mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 156 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5940 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMP26M7UFG-13 FAQ
1.How can I place an order for DMP26M7UFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP26M7UFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP26M7UFG-13 reliable?
The price and inventory of DMP26M7UFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP26M7UFG-13 is usually 5 days.
3.What payment methods are accepted for DMP26M7UFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP26M7UFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP26M7UFG-13?
DMP26M7UFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP26M7UFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP26M7UFG-13?
For technical support, including DMP26M7UFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP26M7UFG-13 requirements.
6.How does Aetrix verify that DMP26M7UFG-13 is sourced from the original manufacturer or authorized distributors?
All DMP26M7UFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP26M7UFG-13 meets industry standards.
7.What is the process for return or replacement of DMP26M7UFG-13?
All DMP26M7UFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP26M7UFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP26M7UFG-13 part is unused and in its original packaging.
Return procedure for DMP26M7UFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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