Diodes Incorporated DMP27M1UPSW-13

Overview

DMP27M1UPSW-13 from Diodes Incorporated is a 20V P-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-current load switching with 5.5mΩ R_DS(ON) at V_GS = −10V, −84A continuous drain current, and thermally efficient 2.1°C/W R_θJC. It serves as a low-loss power switch in DC-DC converter output stages and battery-powered system load management.

For engineers reviewing the DMP27M1UPSW-13 datasheet, DMP27M1UPSW-13 pinout, DMP27M1UPSW-13 application, or DMP27M1UPSW-13 equivalent, key selection criteria include verified R_DS(ON) at −4.5V (7.0mΩ), body diode forward voltage (−0.7V at −10A), gate charge (55nC at V_GS = −4.5V), and thermal resistance to case under PCB-mount conditions.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining fast switching (t_r = 84ns, t_f = 128ns) and low input capacitance (C_iss = 4777pF). Its gate threshold voltage range (−0.4V to −1.3V) enables reliable turn-on with standard logic-level drive in high-side configurations.

The device integrates a robust intrinsic body diode with reverse recovery charge Q_RR = 11nC and t_RR = 20ns, supporting synchronous rectification and bidirectional current handling in buck converters and OR-ing circuits without external diode supplementation.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm footprint, 1.00 mm height, 0.097 g mass. UL 94V-0 mold compound, matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMT2001UFDF-7 and SI2301BDS-T1-GE3, DMP27M1UPSW-13 uniquely delivers −84A current handling with 5.5mΩ on-resistance and 2.1°C/W thermal resistance in a low-profile 5.15×6.40mm package-enabling high-efficiency, high-density power delivery where both current capacity and thermal management are critical.

Availability

DMP27M1UPSW-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, point-of-load DC-DC converters, and industrial I/O modules requiring stable component supply and long-term production continuity.

Supply support for DMP27M1UPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

DMP27M1UPSW-13 belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage load switching and synchronous rectification in space-constrained, thermally demanding applications.

FAQ

What is the maximum safe operating junction temperature for DMP27M1UPSW-13?

The absolute maximum junction temperature is +150°C, with derating required above +25°C ambient. At T_C = +70°C, continuous drain current drops to −68A per datasheet ratings. Thermal design must ensure junction temperature remains below 150°C under worst-case power dissipation and ambient conditions, using the 2.1°C/W R_θJC value with proper PCB copper thermal vias.

Can DMP27M1UPSW-13 be used in a high-side switch configuration with 3.3V GPIO control?

No-its gate threshold voltage range (−0.4V to −1.3V) requires negative gate drive relative to source for full enhancement. With source tied to 12V rail, a −4.5V to −10V gate voltage is needed. A level-shifting gate driver (e.g., TC4427-based inverting stage) or charge pump is mandatory for logic-compatible high-side operation.

Does DMP27M1UPSW-13 have avalanche ruggedness rated for repetitive operation?

The datasheet specifies single-pulse avalanche energy E_AS = 54mJ and current I_AS = −33A (L = 0.1mH), but does not guarantee repetitive avalanche capability. Designers must avoid operation in avalanche mode during normal switching; snubber networks or clamping diodes should suppress inductive spikes to prevent cumulative junction damage.

How does the PowerDI5060-8 package compare to SO-8 in thermal performance?

PowerDI5060-8 achieves 2.1°C/W R_θJC versus typical SO-8's 3.5–4.5°C/W due to its exposed drain pad directly soldered to large PCB copper areas. This 50–60% lower thermal resistance allows ~2.5× higher continuous power dissipation without heatsinks, making it superior for high-current load switching where thermal headroom is limited.