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Diodes Incorporated DMP2900UDW-13
- Part No.:
- DMP2900UDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMP2900UDW-13.pdf
- Description:
- MOSFET 2P-CH 20V 0.63A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:9,323
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Product details
Overview
DMP2900UDW-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT363 package, rated for -20V VDSS, 0.75Ω RDS(ON) at VGS = -4.5V and -0.63A ID at TA = +25°C, optimized for low-voltage battery-powered load switching and solid-state relay replacement.
For engineers reviewing the DMP2900UDW-13 datasheet, DMP2900UDW-13 pinout, DMP2900UDW-13 application, or DMP2900UDW-13 equivalent, this page delivers verified electrical parameters, thermal behavior under pulsed and steady-state conditions, gate charge characteristics, and real-world use cases in portable power management and discrete driver circuits.
Technical Context
This dual P-MOSFET integrates two matched enhancement-mode channels sharing a common source terminal per channel, with gate threshold voltage VGS(TH) ranging from -0.5V to -1.0V and low input capacitance (Ciss = 49pF) enabling fast switching at low gate drive voltages. Its ultra-small SOT363 footprint supports high-density PCB layouts in space-constrained systems.
The device features ESD protection on all terminals, guaranteed RDS(ON) performance across -55°C to +150°C junction temperature, and body diode forward voltage of -0.7V to -1.2V at -150mA - critical for bidirectional current handling in H-bridge or reverse-polarity protection topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - supports rail-to-rail operation in 3.3V/5V logic-controlled battery systems without level-shifting. |
| RDS(ON) @ VGS = -4.5V | 0.75Ω max - enables <150mW conduction loss at 430mA, suitable for low-power load switches. |
| ID Continuous @ +25°C | -0.63A - defines maximum steady-state current per channel with FR-4 board and 2oz copper pad layout. |
| Qg | 0.7nC - low total gate charge reduces drive power and enables efficient PWM control from GPIOs. |
| tF / tR | 89ns / 15ns - fast turn-off and rise times minimize switching losses in DC-DC converter synchronous rectification. |
| RθJA (Steady State) | 340°C/W - thermal resistance measured on minimal pad layout; requires careful thermal design for >100mW dissipation. |
| VGS(TH) | -0.5V to -1.0V - ensures reliable turn-on with 1.8V–3.3V microcontroller outputs without external level shifters. |
Pinout & Package
SOT363 package: 6-pin ultra-small surface-mount outline with dual P-channel configuration and exposed drain pads for thermal relief. Dimensions: 2.15mm × 2.10mm × 1.00mm (L × W × H), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Q1 Source) | Source terminal of first P-MOSFET | Common reference node for Q1; internally connected to Pin 4 in complementary pair configuration. |
| 2 (Q1 Gate) | Gate terminal of first P-MOSFET | Control input for Q1; accepts logic-level negative voltage relative to source to enable conduction. |
| 3 (Q1 Drain) | Drain terminal of first P-MOSFET | High-side switch output; connects to load; thermally coupled to package backside metal. |
| 4 (Q2 Source) | Source terminal of second P-MOSFET | Common reference node for Q2; electrically isolated from Q1 source unless externally tied. |
| 5 (Q2 Gate) | Gate terminal of second P-MOSFET | Independent control input for Q2; enables dual independent load switching or complementary operation. |
| 6 (Q2 Drain) | Drain terminal of second P-MOSFET | Second high-side switch output; separate thermal path from Q1 drain in standard layout. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | VGS(TH) down to -0.5V enables direct drive from 1.8V I/O without level translation. |
| Matched dual-channel RDS(ON) | Both channels specified identically (0.75Ω @ -4.5V), supporting balanced current sharing in parallel or mirrored topologies. |
| ESD-protected terminals | HBM rating ≥2kV per JEDEC JESD22-A114 - eliminates need for external TVS in handheld device interfaces. |
| Low Ciss and Coss | 49pF input / 12pF output capacitance minimizes Miller effect and improves switching stability at 1MHz+ frequencies. |
| Green, lead-free, halogen-free | Compliant with RoHS 3 (2015/863/EU) and Diodes' "Green" definition (<900ppm Br+Cl, <1000ppm Sb). |
Applications
| Battery-Powered Load Switching | Solid-State Relay Replacement |
|---|---|
|
Use Scenario: Power gating of sensors, displays, or radios in wearables and IoT edge nodes powered by single-cell Li-ion (2.8–4.2V). IC Role / Device Role / Timing Role: Dual high-side switch controlling independent peripheral rails with fast enable/disable sequencing. Use Value: 0.75Ω RDS(ON) limits dropout to <320mV at 430mA, preserving battery runtime while enabling sub-100ns response to MCU sleep/wake commands. |
Use Scenario: Replacing electromechanical relays in industrial control panels where vibration immunity and >1M cycle life are required. IC Role / Device Role / Timing Role: Bidirectional load switch with integrated body diode used in AC-coupled or polarity-insensitive DC loads. Use Value: -0.7V to -1.2V VSD supports reverse-current blocking and flyback energy recirculation without external diodes. |
| Low-Voltage Driver Circuitry | Reverse Polarity Protection |
|
Use Scenario: Driving solenoids, buzzers, and LED arrays in automotive body electronics operating from 3.3V or 5V domains. IC Role / Device Role / Timing Role: Discrete logic-level P-channel driver replacing discrete transistor + resistor networks. Use Value: 0.1nC Qgs and 0.7nC Qg reduce gate drive energy by >60% vs. legacy P-MOSFETs, easing GPIO sourcing requirements. |
Use Scenario: Protecting USB-C PD adapters and portable chargers against accidental reverse connection to host devices. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration using both channels to block reverse current below -20V. Use Value: Matched VGS(TH) and RDS(ON) ensure symmetrical turn-on behavior and <10mΩ effective series resistance in protected mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T-7 | Single P-MOSFET in SOT-523 (0.6mm × 0.8mm); RDS(ON) = 0.95Ω @ -4.5V; no dual-channel integration. | Requires two devices and extra routing for dual-load control; higher board area than DMP2900UDW-13. | Select when only one switch is needed or when ultra-miniature single-channel footprint is prioritized over integration. |
| AO6401 | Dual P-MOSFET in TSOP-6; RDS(ON) = 0.75Ω @ -4.5V but higher Qg (2.1nC); RθJA = 120°C/W with enhanced pad layout. | Better thermal performance at high duty cycles but larger 3.05mm × 1.65mm footprint and higher gate drive demand. | Select for continuous >300mA loads requiring lower junction temperature rise, accepting larger PCB area and higher drive capability. |
Compared with DMG1012T-7 and AO6401, DMP2900UDW-13 uniquely balances ultra-compact SOT363 size, low-threshold drive compatibility, and matched dual-channel performance - making it optimal for space-limited, low-duty-cycle battery-switching applications where gate drive simplicity and board area are primary constraints.
Availability
DMP2900UDW-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and low-voltage driver circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMP2900UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
DMP2900UDW-13 belongs to Diodes' advanced small-signal MOSFET product line, engineered specifically for ultra-low-voltage, high-efficiency load switching in portable and space-constrained electronics.
FAQ
What is the maximum safe operating junction temperature for DMP2900UDW-13?
The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Thermal derating begins above +125°C, and sustained operation above +135°C requires active thermal management due to RDS(ON) increase and reduced safe operating area margins.
Can DMP2900UDW-13 be used in back-to-back configuration for reverse polarity protection?
Yes - its matched dual P-channel structure, symmetric VGS(TH), and low RDS(ON) allow implementation of a compact back-to-back switch with <10mΩ effective resistance. The body diodes face outward, enabling full blocking of reverse current up to -20V without external components.
Is the SOT363 package thermally enhanced for power dissipation?
No - the SOT363 uses standard plastic molding with no exposed thermal pad. Its RθJA is 340°C/W on minimal FR-4 layout, limiting usable power to ~100mW continuously. For higher dissipation, external copper pour and thermal vias are mandatory per Diodes' recommended pad layout.
Does DMP2900UDW-13 require external gate resistors for EMI suppression?
Not inherently - its low Qg (0.7nC) and fast tF/tR make it susceptible to ringing if driven directly from high-impedance sources. A 10–22Ω series gate resistor is recommended to dampen oscillation and reduce radiated emissions in noisy environments like motor-driven systems.
DMP2900UDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 630mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 49pF @ 16V
- Power - Max:
- 370mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMP2900UDW-13 FAQ
1.How can I place an order for DMP2900UDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP2900UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP2900UDW-13 reliable?
The price and inventory of DMP2900UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP2900UDW-13 is usually 5 days.
3.What payment methods are accepted for DMP2900UDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP2900UDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP2900UDW-13?
DMP2900UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP2900UDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP2900UDW-13?
For technical support, including DMP2900UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP2900UDW-13 requirements.
6.How does Aetrix verify that DMP2900UDW-13 is sourced from the original manufacturer or authorized distributors?
All DMP2900UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP2900UDW-13 meets industry standards.
7.What is the process for return or replacement of DMP2900UDW-13?
All DMP2900UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP2900UDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP2900UDW-13 part is unused and in its original packaging.
Return procedure for DMP2900UDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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