Diodes Incorporated DMP2900UV-13

Overview

DMP2900UV-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT563 package, rated for -20V V_DSS, 0.75Ω R_DS(ON) @ V_GS = -4.5V, and -0.85A continuous drain current at +25°C. It serves as a compact, low-R_DS(ON) load switch or synchronous rectifier in space-constrained DC-DC converters.

For engineers reviewing the DMP2900UV-13 datasheet, DMP2900UV-13 pinout, DMP2900UV-13 application, or DMP2900UV-13 equivalent, key selection criteria include gate threshold voltage (-0.5 to -1.0V), low input capacitance (49pF C_iss), fast switching (16ns t_D(ON)), ESD-protected gate, and thermal resistance (153°C/W with copper pad).

Technical Context

This dual MOSFET integrates two matched P-channel devices in a single 6-pin SOT563 package, sharing no internal connection between channels-each has independent source, drain, and gate terminals. Its low V_GS(TH) enables direct logic-level drive from 1.8V/2.5V/3.3V controllers without level shifting.

The device features integrated gate protection diodes per channel and exhibits normalized R_DS(ON) variation of ≤1.8× from -55°C to +150°C at fixed V_GS, supporting stable operation across industrial temperature ranges. Dynamic parameters-including 3.4pF Crss and 10.5ns reverse recovery time-are characterized under defined test conditions (V_DS = -10V, I_D = -250mA).

Key Specifications

Pinout & Package

SOT563 is a 6-pin, 1.6mm × 1.6mm surface-mount package with exposed thermal pad (non-electrical). Pin numbering follows JEDEC MO-252, with pins 1–3 assigned to Channel 1 (S1/G1/D1) and pins 4–6 to Channel 2 (S2/G2/D2), arranged symmetrically across the center line.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Compared with DMC2038LVT-7 and SI3993DV-T1-GE3, the DMP2900UV-13 delivers superior thermal performance (153°C/W vs. ≥180°C/W), lower gate charge for high-frequency operation, and factory-validated ESD protection-making it optimal for compact, high-efficiency, and production-ready designs.

Availability

DMP2900UV-13 is available at Aetrix Electronics and suitable for DC-DC converters, load switching, and power management functions requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for DMP2900UV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP2900UV belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power switching in portable, industrial, and computing applications where space, thermal headroom, and reliability are critical.

FAQ

What is the maximum safe operating junction temperature for DMP2900UV-13?

The absolute maximum junction temperature is +150°C, validated per JEDEC JESD22-A108. Operation at this limit requires derating power dissipation to ≤0.3W with standard FR-4 layout, or ≤0.8W with enhanced 1-inch² copper pad. Thermal shutdown is not integrated; external monitoring is required for safety-critical use.

Can DMP2900UV-13 be used in back-to-back configuration for AC switching?

Yes-its symmetrical P-channel structure and -20V V_DSS rating support bidirectional blocking when two devices are connected source-to-source. This configuration achieves <100mΩ total on-resistance at -4.5V gate drive and blocks ±15V AC signals, commonly applied in USB-C port protection and isolated I²C bus level-shifting.

Does DMP2900UV-13 require external gate resistors for stability?

No external gate resistor is required for basic switching, as its 0.7nC Q_g and 49pF C_iss allow clean edges with typical 10Ω MCU GPIO drivers. However, a 5–10Ω series resistor is recommended when driving from high-current buffers (>100mA) to suppress ringing caused by PCB trace inductance in layouts exceeding 2cm trace length.

Is the SOT563 package thermally enhanced with an exposed pad?

The SOT563 package includes an exposed thermal pad on the bottom surface, designated as "EP" in Diodes' outline drawings. Though non-electrical, this pad must be soldered to a dedicated copper pour (≥10mm²) to achieve the 153°C/W R_θJA rating. Omitting the pad connection degrades thermal resistance to 236°C/W, limiting usable power to 0.5W at +25°C ambient.