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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP3006LPSW-13

Name: DMP3006LPSW-13
Brand: Diodes Incorporated
SKU: DMP3006LPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP3006LPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMP3006LPSW-13.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI506

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Product details

Overview

DMP3006LPSW from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, rated for -30V V_DSS, 7.5mΩ R_DS(ON) @ V_GS = -10V, and -92A continuous drain current at T_C = +25°C. It serves as a high-current load switch in notebook battery power-management systems where low conduction loss and thermal efficiency are critical.

For engineers reviewing the DMP3006LPSW datasheet, DMP3006LPSW pinout, DMP3006LPSW application, or DMP3006LPSW equivalent, this device is selected for thin-profile DC-DC converter output stages, high-side battery disconnect circuits, and thermally constrained load-switch designs requiring <1.1mm profile and 1kV HBM ESD protection.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while preserving fast switching performance: t_D(OFF) = 226.7ns and Q_g = 106nC @ V_GS = -10V. Its body diode supports synchronous rectification with V_SD = -0.7V @ I_S = -1A and I_S = -76A continuous rating.

The PowerDI5060-8 (SWP) package features an exposed drain pad for direct thermal coupling to PCB copper, delivering R_θJC = 1.3°C/W and enabling 2.4W power dissipation with 1-inch² copper plate. Gate threshold voltage is tightly specified at -1.1V to -2.1V, ensuring reliable turn-on at -4.5V logic-level drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-30V - Withstands up to -30V drain-source blocking voltage without avalanche breakdown.
R_DS(ON)	7.5mΩ @ V_GS = -10V - Delivers ≤0.75W conduction loss at -10A, minimizing heat generation in high-current paths.
I_D (T_C = +25°C)	-92A - Supports high-power load switching when mounted on thermally enhanced PCB layout.
Q_g	106nC @ V_GS = -10V - Determines gate driver strength requirement for <230ns total switching time in hard-switched applications.
R_θJC	1.3°C/W - Enables direct junction-to-PCB thermal path; 10W power can raise junction temperature only ~13°C above case.
V_GS(TH)	-1.1V to -2.1V - Ensures full enhancement at -4.5V logic drive, supporting standard GPIO or PMIC-controlled switching.
C_iss	5639pF - Impacts high-frequency gate drive losses and EMI behavior in >100kHz DC-DC topologies.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 × 1.10 mm (L × W × H), 0.097g mass, 1.27mm pitch, RoHS-compliant matte tin finish.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight pins connect internally to the exposed drain pad - primary current path and thermal conduction node to PCB.
Pin 1 (Source)	Source (S)	Leftmost terminal in top view; connects to load return or system ground in high-side switch configuration.
Pin 8 (Gate)	Gate (G)	Rightmost terminal in top view; requires controlled slew rate to limit dV/dt-induced shoot-through in bridge configurations.

Key Features

Feature	Design Value
Thermally efficient package	PowerDI5060-8 SWP delivers R_θJC = 1.3°C/W - enables 2.4W operation with minimal heatsinking on standard FR-4.
Low R_DS(ON) at logic-level drive	11mΩ @ V_GS = -4.5V - ensures <1.2W loss at -10A, suitable for 3.3V/5V microcontroller-driven load switches.
Fast switching with low Q_g	t_D(OFF) = 226.7ns and Q_g = 51nC @ -4.5V - reduces transition losses in 500kHz+ synchronous buck converters.
ESD robustness	1kV HBM rating - protects against handling damage during SMT assembly and board-level integration.
Ultra-low profile	Max height 1.1mm - fits within strict Z-height constraints of ultrabooks and tablet battery compartments.

Applications

Notebook Battery Protection Circuit

High-Side Load Switch in USB-C PD Sink

Use Scenario: Isolates main battery from system rail during deep sleep or fault conditions in Windows/Linux ultrabooks.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery-to-system power path; activated by EC or PMIC GPIO.

Use Value: 7.5mΩ R_DS(ON) limits voltage drop to <75mV @ 10A, preserving battery runtime and enabling precise coulomb counting.

Use Scenario: Enables/disables 20V/5A power delivery path from USB-C receptacle to internal DC-DC input in portable monitors.

IC Role / Device Role / Timing Role: High-side power switch with controlled inrush limiting via gate resistor network.

Use Value: 1.1mm profile allows placement under USB-C connector; 1kV HBM withstands plug/unplug transients without external TVS.

DC-DC Converter Synchronous Rectifier

Hot-Swap Controller Back-End Switch

Use Scenario: Replaces Schottky diode in 12V→3.3V buck converter output stage for improved efficiency in industrial edge controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal; body diode conducts during dead-time.

Use Value: V_SD = -0.7V @ -1A and R_DS(ON) = 7.5mΩ reduce conduction loss by >40% vs. 40V Schottky, boosting full-load efficiency to >92%.

Use Scenario: Provides controlled power-up sequencing and overcurrent protection for PCIe add-in cards in server backplanes.

IC Role / Device Role / Timing Role: High-side switch managed by hot-swap controller (e.g., LTC4215) to limit inrush and isolate faults.

Use Value: -30V rating accommodates 12V rail with margin; -359A pulsed current rating survives 10ms short-circuit events without bond-wire fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3006LPSW-13	Same die, identical R_DS(ON), V_DSS, and Q_g; differs only in tape-and-reel packaging (UX vs. UY carrier).	No functional difference; UX carrier optimized for high-speed pick-and-place with tighter pocket tolerance.	Select DMT3006LPSW-13 only if existing SMT line is calibrated for UY carrier; otherwise DMP3006LPSW-13 is preferred for new designs.
SI7157DP-T1-GE3	Higher R_DS(ON) (12mΩ @ -10V), larger SO-8 package (4.9×6.0mm), no exposed drain pad, R_θJC = 3.5°C/W.	Lower thermal performance limits continuous current to -40A; unsuitable for >1.5W sustained dissipation without heatsink.	Choose SI7157DP-T1-GE3 only if legacy SO-8 footprint reuse is mandatory; DMP3006LPSW-13 provides 2.3× higher power density and 2.7× better thermal resistance.

Compared with DMT3006LPSW-13, DMP3006LPSW-13 offers identical electrical specs but superior carrier compatibility for modern SMT lines; versus SI7157DP-T1-GE3, it delivers 39% lower R_DS(ON), 63% lower R_θJC, and 0.4mm lower profile - critical for space-constrained, high-efficiency battery systems.

Availability

DMP3006LPSW-13 is available at Aetrix Electronics and suitable for notebook battery management, USB-C PD sink power path control, and high-density DC-DC converter synchronous rectification requiring stable component supply across multi-year production cycles.

Supply support for DMP3006LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current power switching in portable computing and power delivery systems where thermal density and logic-level drive are essential.

FAQ

What is the maximum safe operating temperature for DMP3006LPSW-13?

The device has a rated junction temperature range of -55°C to +150°C. Under continuous operation with 2oz copper and 1-inch² thermal pad, the maximum ambient temperature sustaining 2.4W dissipation is +70°C. Derating is required above this point per the R_θJA = 50.5°C/W curve in the datasheet.

Can DMP3006LPSW-13 be used in parallel configurations?

Yes - its negative temperature coefficient of R_DS(ON) (normalized resistance increases with temperature, Figure 6) enables inherent current sharing. Parallel use requires matched gate drive impedance and symmetrical PCB layout to minimize loop inductance imbalance and ensure <10% current mismatch at full load.

Does DMP3006LPSW-13 require a gate resistor for stability?

A gate resistor (typically 10–47Ω) is recommended to dampen ringing caused by L_STRAY × C_iss resonance and control dV/dt during turn-on. Without it, overshoot exceeding ±20V V_GS may occur, risking gate oxide stress - especially with long PCB traces or high-current drivers.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to all eight drain pins and forms the primary drain terminal. It must be soldered to a dedicated, non-isolated copper pour tied to the system's high-side power rail. No insulation or solder mask is applied beneath the pad.

DMP3006LPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 92A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5639 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMP3006LPSW-13 FAQ

1.How can I place an order for DMP3006LPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3006LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3006LPSW-13 reliable?

The price and inventory of DMP3006LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3006LPSW-13 is usually 5 days.

3.What payment methods are accepted for DMP3006LPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3006LPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3006LPSW-13?

DMP3006LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3006LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3006LPSW-13?

For technical support, including DMP3006LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3006LPSW-13 requirements.

6.How does Aetrix verify that DMP3006LPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMP3006LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3006LPSW-13 meets industry standards.

7.What is the process for return or replacement of DMP3006LPSW-13?

All DMP3006LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3006LPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3006LPSW-13 part is unused and in its original packaging.

Return procedure for DMP3006LPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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