Diodes Incorporated DMP3007SCGQ-13

Overview

DMP3007SCGQ-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET qualified to AEC-Q101, with R_DS(ON) = 6.8 mΩ @ V_GS = −10 V, I_D = −50 A, and housed in a thermally efficient V-DFN3333-8 (Type B) package. It serves as a high-current power switch in automotive DC-DC converters and backlighting circuits where low conduction loss and space-constrained board layouts are critical.

For engineers reviewing the DMP3007SCGQ-13 datasheet, DMP3007SCGQ-13 pinout, DMP3007SCGQ-13 application, or DMP3007SCGQ-13 equivalent, key selection criteria include verified AEC-Q101 qualification, 6.8 mΩ on-resistance at −10 V gate drive, 100% production-tested unclamped inductive switching, thermal resistance R_θJC = 4.0 °C/W, and compatibility with compact 3.3 mm × 3.3 mm PCB footprints.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-side configurations. Its gate threshold voltage range of −1.0 V to −3.0 V enables robust turn-on control with standard −10 V or −4.5 V logic-level drive, while its 130 mJ avalanche energy rating supports reliable operation under inductive load transients.

The device integrates an intrinsic body diode with V_SD = −0.7 V (typ.) at −1 A and exhibits C_iss = 2826 pF, C_oss = 606 pF, and Q_g = 64.2 nC (at V_GS = −10 V), enabling predictable gate drive design in synchronous buck and load-switch topologies.

Key Specifications

Pinout & Package

Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm profile with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Compared with DMT3007LFG-7 and IPB80P04P4L-02, the DMP3007SCGQ-13 uniquely balances AEC-Q101 compliance, ultra-low 3.3 mm × 3.3 mm footprint, and production-validated UIS - making it optimal for space- and reliability-constrained automotive power switches where PPAP documentation is mandatory.

Availability

DMP3007SCGQ-13 is available at Aetrix Electronics and suitable for automotive LED lighting, DC-DC power conversion, and body control module load switching requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMP3007SCGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMP3007SCGQ-13 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for high-current, thermally constrained automotive power management applications including lighting, motor control, and DC-DC regulation.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMP3007SCGQ-13 supports −40 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the V-DFN3333-8 package's exposed drain pad and PCB copper area, and must be validated using the provided R_θJC = 4.0 °C/W and transient thermal resistance curves.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes - a 6 Ω gate resistor is used in the datasheet's switching time test conditions (t_D(OFF), t_F) and is recommended for EMI control in automotive environments. The device's Q_gd = 11.6 nC and C_iss = 2826 pF make controlled gate edge rates essential to meet CISPR 25 Class 5 radiated emissions limits.

Is the exposed drain pad electrically connected to the drain terminals?

Yes - pins 1 through 7 and the entire exposed bottom pad are internally connected to the drain (D). The pad must be soldered to a dedicated PCB copper pour tied to the high-side power rail and thermal plane; it is not isolated or floating.

Can this MOSFET replace an N-channel device in high-side switching?

No - the DMP3007SCGQ-13 is a P-channel device designed for high-side switching with simplified gate drive (no bootstrap or charge pump required), but it cannot functionally substitute for an N-channel MOSFET due to opposite polarity, higher R_DS(ON), and different threshold behavior. Circuit redesign is mandatory for such replacement.