Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP3007SFG-13

Part No.:
DMP3007SFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMP3007SFG-13.pdf
Description:
MOSFET P-CH 30V 70A POWERDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,343

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP3007SFG-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for -70A continuous drain current at TC = +25°C, with RDS(ON) of 6 mΩ @ VGS = -10V and 13 mΩ @ VGS = -4.5V. It serves as a high-current synchronous rectifier or load switch in DC-DC converters and backlighting power stages.

For engineers reviewing the DMP3007SFG-13 datasheet, DMP3007SFG-13 pinout, DMP3007SFG-13 application, or DMP3007SFG-13 equivalent, key selection criteria include low gate charge (Qg = 64.2 nC @ VGS = -10V), thermally efficient exposed-drain package, and guaranteed avalanche energy rating (EAS = 130 mJ).

Technical Context

This MOSFET employs trench-gate silicon process to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(OFF) = 306 ns and Qgd/Qgs ratio of ~1.1 supports stable hard-switching operation. Its body diode exhibits VSD = -0.7 V @ IS = -1 A and tRR = 19 ns, enabling efficient freewheeling in buck and synchronous boost topologies.

The PowerDI3333-8 package integrates an exposed drain pad with RθJC = 3.0 °C/W, allowing direct thermal coupling to PCB copper. Gate protection includes integrated ESD diode and ±25 V VGSS rating, supporting robust gate drive in noisy industrial environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -30 V - Maximum blocking voltage in off-state; suitable for 24 V rail systems with margin.
RDS(ON) 6 mΩ @ VGS = -10 V - Enables <1 W conduction loss at 40 A, critical for high-efficiency power stages.
ID (continuous) -70 A @ TC = +25°C - Requires heatsinking or large copper area for sustained operation above 50 A.
Qg 64.2 nC @ VGS = -10 V - Determines gate driver current requirement (~1.3 A peak for 50 ns rise time).
EAS 130 mJ - Supports single-pulse inductive turn-off without failure in DC-DC output stage applications.
RθJC 3.0 °C/W - Enables direct thermal path from junction to PCB; critical for compact power designs.
tRR 19 ns - Limits reverse recovery losses during synchronous rectification in high-frequency converters.

Pinout & Package

Package: PowerDI3333-8 - surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 1–3 and 5–7 are source; pin 4 is gate; pins 8 and internal die attach are drain). Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), 0.65 mm pitch.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 5, 6, 7 Source (S) Common source connection; electrically tied internally; used for low-inductance return path in high-di/dt circuits.
4 Gate (G) Control terminal; requires ≤±25 V drive; ESD-protected with integrated gate diode.
8 + Exposed Pad Drain (D) Main power terminal and primary thermal path; must be soldered to ≥1 in² 2 oz copper for rated PD = 2.8 W.

Key Features

Feature Design Value
Low RDS(ON) at 4.5 V drive 13 mΩ enables use with 5 V logic-level gate drivers in battery-powered systems.
Thermally optimized package PowerDI3333-8 occupies only 33% board area vs SO-8, yet delivers RθJC = 3.0 °C/W.
Integrated gate ESD protection Withstands >2 kV HBM per JESD22-A114, reducing need for external TVS in layout-constrained designs.
Avalanche-rated operation Rated for 16 A single-pulse IAS and 130 mJ EAS, supporting reliable operation under inductive switching stress.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A Tier 1 requirements.

Applications

LED Backlighting DC-DC Synchronous Rectifier

Use Scenario: High-current LED string control in automotive instrument clusters and industrial displays.

IC Role / Device Role / Timing Role: Low-side switch controlling PWM-modulated current through 4–6 parallel LED strings (up to 45 A peak).

Use Value: 13 mΩ RDS(ON) at VGS = -4.5 V minimizes conduction loss and thermal rise in space-constrained display modules.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V flyback converters for PoE-powered devices.

IC Role / Device Role / Timing Role: Fast-turning-on rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: 19 ns tRR and low Qgd reduce switching loss and improve efficiency by >2.5% over 40 V Schottky alternatives.

Hot-Swap Load Switch Motor Drive Half-Bridge

Use Scenario: Inrush-limited 24 V power distribution to FPGA or ASIC subsystems in telecom line cards.

IC Role / Device Role / Timing Role: High-side load switch controlled via dedicated hot-swap controller (e.g., LTC4215) with current limiting.

Use Value: -30 V VDSS and -70 A rating support 20 A steady-state loads with margin for surge currents up to -120 A (IDM).

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for industrial actuators and robotics.

IC Role / Device Role / Timing Role: One quadrant of half-bridge; commutated at ≤50 kHz with dead-time control to prevent shoot-through.

Use Value: 130 mJ EAS rating ensures robustness against inductive kickback during rapid PWM transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3007LPS-13 Same RDS(ON) (6 mΩ @ -10 V), but in smaller PowerDI5060 package; RθJA = 60 °C/W (vs 45 °C/W for DMP3007SFG-13). Better suited for space-constrained but lower-power applications (<25 A continuous); less thermal headroom at high current. Select when board area is critical and thermal budget allows higher junction temperature rise.
SI7157DP-T1-GE3 Higher RDS(ON) (9.5 mΩ @ -10 V), larger SO-8 package; Qg = 42 nC - 35% lower than DMP3007SFG-13. Lower gate drive demand suits microcontroller-driven low-frequency switching; not rated for avalanche. Select for cost-sensitive, non-avalanche applications where gate drive capability is limited and 30% higher conduction loss is acceptable.

Compared with DMT3007LPS-13 and SI7157DP-T1-GE3, DMP3007SFG-13 offers superior thermal performance (RθJC = 3.0 °C/W) and guaranteed avalanche ruggedness - essential for high-current DC-DC and motor control where inductive stress and thermal density are dominant constraints.

Availability

DMP3007SFG-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC synchronous rectification, and hot-swap load switching requiring stable component supply across automotive, industrial, and telecom production programs.

Supply support for DMP3007SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP3007SFG belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space- and thermal-constrained applications such as portable electronics, LED lighting, and industrial power supplies.

FAQ

What is the maximum safe operating temperature for DMP3007SFG-13?

The device has an operating junction temperature range of -55°C to +150°C. Under continuous DC conditions on a 1-inch square 2 oz copper pad, it achieves 2.8 W power dissipation with RθJA = 45 °C/W - limiting TJ to ≤125°C at 25°C ambient. Derating is required above 70°C ambient per Figure 12 SOA curves.

Can DMP3007SFG-13 be used in high-frequency switching applications above 1 MHz?

Yes - its dynamic parameters support high-frequency operation: Ciss = 2826 pF, Coss = 606 pF, and Qg = 64.2 nC @ -10 V enable efficient switching up to 2 MHz in resonant topologies. However, gate drive strength must exceed 1.5 A peak to maintain <20 ns rise/fall times at full load.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is electrically and thermally connected to pin 8 and forms the primary drain terminal. It must be soldered to a dedicated PCB copper pour tied to the system drain net. No insulation or thermal interface material should be placed between the pad and PCB copper.

Does DMP3007SFG-13 require external gate resistors for stability?

A gate resistor of 2–6 Ω is recommended to dampen ringing caused by Lg–Ciss resonance, especially when driving from high-impedance sources. The datasheet specifies tD(ON)/tR test condition uses Rg = 6 Ω - matching this value ensures timing consistency with published switching characteristics.

DMP3007SFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
64.2 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
2826 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8

DMP3007SFG-13 FAQ

1.How can I place an order for DMP3007SFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3007SFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3007SFG-13 reliable?

The price and inventory of DMP3007SFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3007SFG-13 is usually 5 days.

3.What payment methods are accepted for DMP3007SFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3007SFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3007SFG-13?

DMP3007SFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3007SFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3007SFG-13?

For technical support, including DMP3007SFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3007SFG-13 requirements.

6.How does Aetrix verify that DMP3007SFG-13 is sourced from the original manufacturer or authorized distributors?

All DMP3007SFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3007SFG-13 meets industry standards.

7.What is the process for return or replacement of DMP3007SFG-13?

All DMP3007SFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3007SFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3007SFG-13 part is unused and in its original packaging.

Return procedure for DMP3007SFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP3007SFG-13 Tags

  • DMP3007SFG-13
  • DMP3007SFG-13 PDF
  • DMP3007SFG-13 Datasheet
  • DMP3007SFG-13 Specifications
  • DMP3007SFG-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP3007SFG-13
  • Buy DMP3007SFG-13
  • DMP3007SFG-13 Price
  • DMP3007SFG-13 Distributor
  • DMP3007SFG-13 Supplier
  • DMP3007SFG-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER