Diodes Incorporated DMP3007SPS-13

Overview

DMP3007SPS from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for -30V V_DSS, 7mΩ R_DS(ON) @ V_GS = -10V, and -90A continuous drain current at T_C = +25°C. It serves as a high-current synchronous rectifier or load switch in DC-DC converters and backlight power stages.

For engineers reviewing the DMP3007SPS datasheet, DMP3007SPS pinout, DMP3007SPS application, or DMP3007SPS equivalent, key selection criteria include its low R_DS(ON) at -4.5V gate drive, 100% unclamped inductive switching rating, thermal resistance of 1.5°C/W (junction-to-case), and RoHS-compliant matte tin finish on copper leadframe.

Technical Context

This MOSFET uses a trench-gate process to achieve low on-resistance while maintaining fast switching performance. Its internal structure includes an integrated ESD-protected gate and a robust body diode with 19ns reverse recovery time and 9.8nC Q_RR.

The device operates across -55°C to +150°C junction temperature range and supports gate drive voltages from ±25V. Its dynamic characteristics-C_iss = 2826pF, C_oss = 606pF, and Q_g = 64.2nC @ V_GS = -10V-enable efficient operation in high-frequency synchronous buck topologies.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced surface-mount package with exposed drain pad for low R_θJC; 8-terminal configuration with dual-source and dual-drain paralleling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMT3007LPS-13 and SI7157DP-T1-GE3, DMP3007SPS offers superior thermal performance (1.5°C/W R_θJC) and ruggedness (130mJ E_AS), making it optimal for high-reliability, high-current DC-DC and load-switching applications where thermal headroom and inductive stress are design-critical.

Availability

DMP3007SPS is available at Aetrix Electronics and suitable for LED backlighting, DC-DC synchronous rectification, and hot-swap protection requiring stable component supply and long-term production continuity.

Supply support for DMP3007SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and consumer markets.

The DMP3007SPS belongs to Diodes' Power MOSFET product line, engineered for high-current, low-voltage power conversion where thermal performance and ruggedness are prioritized over minimal gate charge.

FAQ

What is the maximum safe operating temperature for DMP3007SPS?

The DMP3007SPS has a specified junction temperature range of -55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and thermal shutdown is not built-in; system-level thermal design must ensure TJ stays within this limit using the 1.5°C/W R_θJC and appropriate PCB copper area per the recommended pad layout.

Can DMP3007SPS be used with 3.3V gate drive?

Yes-DMP3007SPS delivers 16mΩ R_DS(ON) at V_GS = -4.5V and remains fully enhanced down to -3.0V (V_GS(TH) max = -3.0V). At 3.3V logic levels, use an inverting level shifter or negative bias generator to ensure sufficient |V_GS|; direct 3.3V drive yields high R_DS(ON) and excessive heating.

Does DMP3007SPS require a gate resistor for stability?

A gate resistor (typically 2Ω–10Ω) is recommended to dampen ringing caused by gate loop inductance and Crss feedback. The device's R_g = 23Ω (typical) and Crss = 305pF make it susceptible to oscillation without proper gate drive impedance matching, especially in high-dI/dt synchronous buck applications.

How does the PowerDI5060-8 package compare to SO-8 for thermal performance?

PowerDI5060-8 provides 1.5°C/W R_θJC (junction-to-case) versus ~3.5°C/W for standard SO-8, due to its exposed drain pad soldered directly to PCB copper. This enables up to 5× higher power dissipation at the same case temperature, eliminating need for external heatsinks in many 50–80W applications.