Diodes Incorporated DMP3011SFVW-13

Overview

DMP3011SFVW-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in PowerDI®3333-8 package, with R_DS(on) = 10 mΩ @ V_GS = −10 V, I_D = −50 A (T_C = +25°C), and ESD-protected gate. It serves as a high-current load switch in power management and general-purpose interfacing circuits, especially where board space and thermal efficiency are constrained.

For engineers reviewing the DMP3011SFVW-13 datasheet, DMP3011SFVW-13 pinout, DMP3011SFVW-13 application, or DMP3011SFVW-13 equivalent, this page delivers verified electrical parameters, thermal performance data, package layout details, and real-world switching use cases - all validated against Diodes' DS43752 Rev. 3-2 datasheet.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance while preserving fast switching characteristics: t_D(on) = 6 ns, t_F = 33 ns, and Q_g = 46 nC at V_GS = −10 V. Its body diode exhibits V_SD = −0.7 V @ I_S = −1 A and t_RR = 19 ns, supporting synchronous rectification and reverse recovery–sensitive topologies.

The device operates across T_J = −55°C to +150°C, with normalized R_DS(on) variation ≤1.8× over temperature and R_θJC = 3.3°C/W enabling direct heatsinking via its exposed drain pad. Gate threshold voltage V_GS(th) ranges from −1.0 V to −3.0 V, ensuring reliable turn-on with standard logic-level drive.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 (SWP), surface-mount, thermally enhanced plastic case with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with DMT3009LPS-13 and SI7157DP-T1-GE3, DMP3011SFVW-13 uniquely combines ESD-hardened gate structure, industry-leading 10 mΩ R_DS(on), and ultra-compact PowerDI3333-8 thermal performance-making it optimal for high-reliability, high-density power switching where gate integrity and thermal headroom are non-negotiable.

Availability

DMP3011SFVW-13 is available at Aetrix Electronics and suitable for high-side load switching, battery protection circuits, synchronous rectification, and industrial PLC output stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMP3011SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMP3011SFVW belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding minimal conduction loss, fast switching, and robust thermal behavior in compact packages.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMP3011SFVW-13 supports −40 A continuous drain current when case temperature is maintained at +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package under sustained high-power operation without forced cooling.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 6 Ω, per datasheet test condition) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 296 pF) and PCB trace inductance. Omitting it may cause oscillation during switching transitions, especially at high dV/dt or with long gate traces.

Can DMP3011SFVW-13 be used in automotive applications?

The DMP3011SFVW-13 is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing - contact Diodes directly for qualified alternatives such as the DMP3011SFVQ series.

How does the PowerDI3333-8 package improve thermal performance over SO-8?

PowerDI3333-8 reduces thermal resistance from junction to case to 3.3°C/W (vs. ~5–6°C/W for SO-8), achieved via direct copper exposure on the drain pad. Its 3.3 mm × 3.3 mm footprint also allows tighter thermal vias placement and higher copper fill ratio, lowering effective R_θJA by up to 25% in identical PCB layouts.