Diodes Incorporated DMP3011SFVWQ-13

Overview

DMP3011SFVWQ-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for -50A at T_C = +25°C, with R_DS(on) = 10 mΩ @ V_GS = -10V and AEC-Q101 qualified for automotive power management. It serves as a high-current synchronous rectifier or load switch in DC-DC converters and backlighting circuits.

For engineers reviewing the DMP3011SFVWQ-13 datasheet, DMP3011SFVWQ-13 pinout, DMP3011SFVWQ-13 application, or DMP3011SFVWQ-13 equivalent, key selection criteria include its low R_DS(on) at -4.5V gate drive, thermally efficient exposed-drain package, AEC-Q101 qualification, and SOA-limited pulsed current capability of -176A.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low gate charge (Q_g = 46 nC @ V_GS = -10V) and fast switching (t_F = 33 ns), enabling high-efficiency operation in 300–2000 kHz DC-DC topologies. Its body diode exhibits t_RR = 19 ns and Q_RR = 8.9 nC, supporting synchronous rectification without external Schottky replacement.

The device features integrated ESD protection on the gate (±25V V_GSS rating), operates across -55°C to +150°C junction range, and delivers stable R_DS(on) performance-normalized variation ≤1.8× over temperature-with thermal resistance R_θJC = 3.3°C/W to the exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad (pins 1–4 and 7–8 are source terminals; pin 5 is gate; pin 6 is drain). Molded plastic case meets UL 94V-0; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMTH3011LPSQ-13, DMP3011SFVWQ-13 offers lower gate charge and tighter R_DS(on) tolerance; versus IPB80P03P4L-04, it trades absolute R_DS(on) for AEC-Q101 compliance and 33% smaller PCB area-critical for space-constrained automotive modules.

Availability

DMP3011SFVWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and power management units requiring stable component supply under IATF 16949 traceability and AEC-Q101 assurance.

Supply support for DMP3011SFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

This part belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive power conversion and load switching where thermal density, gate drive compatibility, and long-term reliability are critical.

FAQ

What is the maximum continuous drain current at T_A = +70°C?

The DMP3011SFVWQ-13 supports -12 A continuous drain current at ambient temperature +70°C with standard FR-4 mounting (2 oz copper, no thermal bias). This rating assumes steady-state conduction without forced airflow and accounts for derating due to R_θJA = 55°C/W under enhanced layout conditions.

Does this MOSFET require a gate resistor for automotive ECU use?

Yes-a 4.7 Ω to 6.8 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-di/dt automotive environments. The device's R_g = 3 Ω intrinsic gate resistance and fast t_F = 33 ns make external damping essential to prevent shoot-through in half-bridge configurations.

Can DMP3011SFVWQ-13 replace an N-channel MOSFET in high-side switching?

No-it is a P-channel device intended for high-side switching only when driven with gate voltage referenced to source (e.g., using charge pump or dedicated high-side driver). Unlike N-channel MOSFETs, it cannot be directly substituted without modifying gate drive architecture and voltage translation.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-the package is qualified for lead-free reflow per J-STD-020 Level 1 moisture sensitivity and withstands peak temperatures up to 260°C. Its matte tin finish ensures solderability per MIL-STD-202 Method 208, and the exposed drain pad requires controlled stencil aperture (80–90% fill) to avoid voiding.