Diodes Incorporated DMP3011SPDW-13

Overview

DMP3011SPDW from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in PowerDI5060-8 package, designed for high-efficiency synchronous rectification and power switching. It delivers 13 mΩ R_DS(ON) at V_GS = −10 V, −38.2 A continuous drain current at T_C = +25°C, and features wettable flanks for automated optical inspection-used in wireless charging transmitters and DC-DC converter secondary-side switches.

For engineers reviewing the DMP3011SPDW datasheet, DMP3011SPDW pinout, DMP3011SPDW application, or DMP3011SPDW equivalent, key selection criteria include its dual-channel P-channel topology, low gate charge (46 nC at V_GS = −10 V), thermally optimized exposed-drain thermal path, and AEC-Q101 readiness for automotive power management designs.

Technical Context

This device integrates two matched P-channel MOSFETs with independent source, gate, and drain terminals per channel, enabling synchronous buck or half-bridge configurations without external isolation. Its gate threshold voltage range (−1.0 to −3.0 V) supports robust turn-on under low-voltage control logic, while 100% production UIS testing ensures reliability in inductive load switching.

The PowerDI5060-8/SWP package provides 4.4°C/W junction-to-case thermal resistance and an exposed drain pad for direct PCB copper thermal coupling. Dynamic parameters-including 2380 pF input capacitance, 296 pF reverse transfer capacitance, and 19 ns reverse recovery time-support high-frequency operation up to 1 MHz in isolated DC-DC topologies.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with DMTH3011LPS-13 and SI7157DP-T1-GE3, DMP3011SPDW offers superior thermal performance (R_θJC = 4.4°C/W), production UIS validation, and AOI-compatible leads-making it optimal for high-reliability, high-power-density DC-DC and wireless charging designs.

Availability

DMP3011SPDW is available at Aetrix Electronics and suitable for wireless charging transmitters, USB-C PD converters, and automotive body control modules requiring stable component supply across extended temperature ranges (−55°C to +150°C).

Supply support for DMP3011SPDW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and automotive markets.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-frequency switching in compact power conversion systems where thermal density and reliability are critical.

FAQ

What is the maximum safe operating junction temperature for DMP3011SPDW?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Operation above this limit risks permanent degradation of gate oxide integrity and increased R_DS(ON) drift. Thermal design must ensure T_J remains ≤150°C under worst-case ambient and power dissipation conditions, using the provided R_θJC = 4.4°C/W and transient thermal resistance curves.

Can DMP3011SPDW be used in linear regulator applications?

No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curve shows significant derating beyond 10 µs pulses, and R_DS(ON) variation with temperature (Figure 6) introduces instability in precision current regulation. Its design targets switching applications where low R_DS(ON) and fast transition times maximize efficiency.

Does DMP3011SPDW require external gate resistors for EMI control?

Yes-gate resistance directly affects switching speed and EMI generation. With 46 nC total gate charge and 3 Ω intrinsic gate resistance, a 10–22 Ω external series resistor is recommended to limit dV/dt to <5 V/ns in 24 V systems, preventing false triggering and reducing radiated emissions per CISPR 25 Class 5 limits.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to both D1 and D2 terminals and must be soldered to a dedicated, non-grounded copper pour. Connecting it to system ground creates short circuits between channels. Proper layout requires separate thermal vias to internal layers and isolation from adjacent signal or power planes per the recommended pad layout in the datasheet.