Diodes Incorporated DMP3011SPSW-13

Overview

DMP3011SPSW from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, designed for high-efficiency power management with R_DS(ON) = 10 mΩ @ V_GS = −10 V, I_D = −65 A at T_C = +25°C, and fast switching (t_F = 33 ns). It serves as a synchronous rectifier or load switch in DC-DC converters.

For engineers reviewing the DMP3011SPSW datasheet, DMP3011SPSW pinout, DMP3011SPSW application, or DMP3011SPSW equivalent, key selection criteria include low R_DS(ON) at −4.5 V gate drive, thermal resistance R_θJC = 2.0 °C/W, ESD protection on gate, and compatibility with thin-profile board designs due to <1.1 mm profile.

Technical Context

This MOSFET uses a trench-gate process optimized for low conduction loss while maintaining controlled Q_g (46 nC @ V_GS = −10 V) and low C_iss (2380 pF), enabling efficient operation in high-frequency synchronous buck converters. Its body diode exhibits V_SD = −0.7 V @ I_S = −1 A and supports bidirectional current flow in OR-ing and reverse-polarity protection circuits.

The device integrates gate protection diodes and is ESD-rated per HBM Class 1C (≥1 kV), with a gate threshold voltage range of −1.0 V to −3.0 V and guaranteed avalanche energy E_AS = 112 mJ (L = 1 mH), supporting robust transient handling in industrial power rails.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 × 1.00 mm (L × W × H), profile <1.1 mm. Molded green compound, RoHS/REACH compliant, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with DMT3006LPS-13 and SI7157DP-T1-GE3, DMP3011SPSW delivers best-in-class thermal performance per unit volume and built-in gate protection-critical for compact, high-reliability DC-DC modules where layout area and BOM count are constrained.

Availability

DMP3011SPSW is available at Aetrix Electronics and suitable for DC-DC converters, reverse polarity protection circuits, and hot-swap controller interfaces requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.

Supply support for DMP3011SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in computing, telecom, and industrial equipment where low R_DS(ON), fast switching, and thermal reliability are critical.

FAQ

What is the maximum safe operating junction temperature for DMP3011SPSW?

The absolute maximum junction temperature is +150°C, and the device is characterized across −55°C to +150°C. Derating begins at T_J > 125°C per Figure 6 and Figure 7; sustained operation above 135°C requires thermal modeling using R_θJC = 2.0 °C/W and measured case temperature.

Does DMP3011SPSW require a gate resistor for ESD protection?

No external gate resistor is required for basic ESD protection-the device integrates gate protection diodes and is rated HBM Class 1C (≥1 kV). However, a 10 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions in high-frequency switching.

Can DMP3011SPSW be used in linear regulator applications?

It is not recommended for linear regulation due to its relatively high R_DS(ON) temperature coefficient (+0.3 %/°C) and limited Safe Operating Area (SOA) at DC bias-Figure 12 shows SOA is restricted to <10 V × 10 A at DC. Use only in switching mode with proper gate drive and thermal management.

How is the exposed drain pad electrically connected in the PowerDI5060-8 package?

The exposed drain pad is internally connected to all drain terminals (pins 2–6) and forms the primary thermal and electrical path for drain current. It must be soldered to a solid copper pour tied to the system's main power ground or negative rail-no isolation or thermal relief is permitted for optimal R_θJC performance.