Diodes Incorporated DMP3015LSS-13

Overview

DMP3015LSS from Diodes Incorporated is a P-channel enhancement-mode MOSFET designed for high-efficiency power management, featuring -30V V(BR)DSS, 11mΩ RDS(ON) at VGS = -10V, and -13A continuous drain current at TA = +25°C. It operates in DC-DC converters and backlighting circuits where low conduction loss and fast switching are critical.

For engineers reviewing the DMP3015LSS datasheet, DMP3015LSS pinout, DMP3015LSS application, or DMP3015LSS equivalent, key selection criteria include gate threshold voltage (-1 to -2V), dynamic capacitances (Ciss = 2748pF, Crss = 356pF), thermal resistance (RθJA = 50°C/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining controlled gate charge (Qg = 30.0–60.4nC) and fast switching (td(on) = 11.2ns, tf = 61.7ns). Its negative VGS(th) enables direct logic-level drive from 3.3V/5V controllers without level-shifting.

The device integrates a body diode with VSD = -0.5 to -1.1V at IS = -2.1A and exhibits low input/output leakage (IDSS ≤ -1µA, IGSS ≤ ±100nA), supporting stable operation in battery-powered and always-on power rails.

Key Specifications

Pinout & Package

Package: SO-8 surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMP3007LSS and DMN3016LSD, the DMP3015LSS balances gate drive simplicity, thermal performance, and footprint-making it optimal for cost-sensitive, logic-level-driven high-side switches where moderate conduction loss is acceptable.

Availability

DMP3015LSS is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and USB-C power delivery systems requiring stable component supply and long-term lifecycle support.

Supply support for DMP3015LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP3015LSS belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power switching in automotive and industrial applications where AEC-Q101 compliance and low RDS(ON) are essential.

FAQ

What is the maximum safe operating temperature for DMP3015LSS?

The DMP3015LSS has a specified junction temperature range of -55°C to +150°C. Under typical SO-8 mounting on 2 oz copper FR-4, its RθJA is 50°C/W; thus, at 2.5W dissipation, TJ rises 125°C above ambient, limiting safe continuous operation to TA ≤ +25°C unless derated or heatsinked. Maximum case temperature must not exceed +150°C.

Can DMP3015LSS be used in high-side switch configurations with 3.3V logic control?

Yes. With a gate threshold voltage of -1 to -2V and guaranteed turn-on at VGS = -4.5V, the DMP3015LSS fully enhances using a 3.3V GPIO pulled low through a level-shifter or open-drain driver. No external boost circuit is needed, unlike many P-MOSFETs requiring ≥-10V for full enhancement.

Is DMP3015LSS suitable for automotive infotainment power rails?

Yes. Its AEC-Q101 qualification covers temperature cycling, humidity testing, and high-temperature gate bias stress-validating use in infotainment DC-DC stages. The -30V rating supports 12V system transients up to ISO 7637-2 Pulse 1/2a, and its low leakage ensures low quiescent current in always-on domains.

How does the SO-8 package affect thermal performance in dense PCB layouts?

The SO-8 package uses four-source and four-drain pins to maximize copper connection area, lowering effective thermal resistance. However, RθJA = 50°C/W assumes 2 oz copper pads with thermal vias; in dense layouts with limited copper, RθJA may degrade to 70–90°C/W-requiring derating to ≤1.5W or adding thermal relief patterns and stitching vias beneath the exposed drain pad.