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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP3017SFGQ-7

Name: DMP3017SFGQ-7
Brand: Diodes Incorporated
SKU: DMP3017SFGQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP3017SFGQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMP3017SFGQ-7.pdf

Description:: MOSFET P-CH 30V 11.5A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMP3017SFGQ from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, with R_DS(ON) = 10 mΩ @ V_GS = −10 V, I_D = −11.5 A (T_A = +25°C), and AEC-Q101 qualified for automotive power management. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMP3017SFGQ datasheet, DMP3017SFGQ pinout, DMP3017SFGQ application, or DMP3017SFGQ equivalent, key selection criteria include its low on-resistance at −4.5 V gate drive (18 mΩ), thermally efficient PowerDI3333-8 footprint, −30 V V_DSS rating, AEC-Q101 qualification, and body diode forward voltage of −0.7 V at −1 A.

Technical Context

This MOSFET employs a trench-gate process to achieve low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 7.5 ns, t_r = 15.4 ns, Q_g = 41 nC @ V_GS = −10 V. Its gate threshold voltage range (−1.0 V to −3.0 V) ensures reliable turn-on with standard logic-level drivers.

The device integrates ESD protection on the gate and features a robust body diode with t_rr = 20 ns and Q_rr = 9.5 nC, enabling use in hard-switched topologies. Thermal resistance R_θJA is 60 °C/W (steady-state, 2 oz copper, 1-inch² pad), supporting continuous operation up to T_J = +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - Withstands reverse drain-source voltage up to rated breakdown without conduction.
R_DS(ON)	10 mΩ @ V_GS = −10 V - Enables ≤1.3 W conduction loss at −11.5 A, critical for high-current power stages.
I_D (max)	−11.5 A @ T_A = +25°C - Supports sustained load currents in compact DC-DC output stages.
Q_g	41 nC @ V_GS = −10 V - Determines gate drive power requirement and switching speed in PWM control loops.
V_GS(TH)	−1.0 to −3.0 V - Ensures full enhancement with −3.3 V or −5 V logic-compatible gate signals.
t_r/t_f	15.4 ns / 36.8 ns - Limits switching transition losses and EMI generation in high-frequency converters.
V_SD	−0.7 V @ I_S = −1 A - Reduces forward conduction loss in freewheeling paths versus discrete Schottky alternatives.

Pinout & Package

Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain paddle; occupies 33% board area of SO-8; 0.072 g mass; RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals connected to internal die drain metallization and exposed thermal paddle - primary current path and heat sink interface.
5	Source (S)	Main source connection - carries full load current in high-side switch configuration.
6, 7, 8	Source (S)	Three additional source terminals - reduce source inductance and improve current sharing in high-di/dt applications.
-	Gate (G)	Terminal 5 is gate - confirmed by bottom-view marking diagram and equivalent circuit showing G between S and D terminals.

Key Features

Feature	Design Value
Low R_DS(ON) at −4.5 V	18 mΩ - Enables efficient operation directly from 5 V or 3.3 V microcontroller GPIOs without level-shifting.
Thermally optimized package	R_θJC = 3.0 °C/W - Allows >2 W power dissipation with minimal junction-to-case temperature rise under forced convection.
AEC-Q101 qualification	PPAP-capable, IATF 16949 manufacturing - meets automotive reliability requirements for engine control, ADAS, and infotainment power rails.
ESD-protected gate	HBM ≥2 kV - Prevents gate oxide damage during PCB handling and assembly without external protection components.
Green packaging	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - complies with EU environmental directives and OEM sustainability mandates.

Applications

Automotive LED Headlight Driver

USB-C PD Power Path Switch

Use Scenario: High-side current control for adaptive front lighting systems requiring precise dimming and fault protection.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side load switch with integrated current sensing feedback loop.

Use Value: 10 mΩ R_DS(ON) minimizes voltage drop across headlight supply rail, preserving luminance regulation accuracy at 8–10 A loads.

Use Scenario: Bidirectional power path control in USB-C port controllers managing sink/source role negotiation.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch enabling safe 20 V/5 A power delivery without body diode conduction loss.

Use Value: −0.7 V V_SD and 20 ns t_rr reduce reverse recovery energy in auto-reverse configurations, lowering thermal stress during plug insertion.

Industrial DC-DC Synchronous Rectifier

Portable Device Battery Protection

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency above 500 kHz switching frequency.

Use Value: 41 nC total gate charge enables clean turn-on/turn-off timing with standard gate drivers, reducing cross-conduction losses by >35% vs. discrete diode.

Use Scenario: Overvoltage and reverse-battery protection in handheld medical monitors powered by Li-ion packs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode in series with battery input to block reverse current and clamp transients.

Use Value: −30 V V_DSS withstands load-dump spikes up to 28 V, while 18 mΩ R_DS(ON) at −4.5 V gate drive ensures <50 mV dropout during 3 A peak discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMP3011SFVWQ	R_DS(ON) = 7.5 mΩ @ −10 V, but V_DSS = −30 V same; smaller PowerDI5060-8 package (5.0 × 6.0 mm).	Higher current density; requires tighter layout due to reduced thermal pad area.	Select when board space is constrained and thermal margin allows higher R_θJA (100 °C/W typical).
DMG1012T	R_DS(ON) = 15 mΩ @ −4.5 V, V_DSS = −20 V, SOT-23-6 package; no AEC-Q101 qualification.	Limited to consumer-grade 3.3 V/5 V logic interfaces; unsuitable for automotive or industrial ambient temperatures >105°C.	Choose only for cost-sensitive non-automotive applications where −20 V rating suffices and AEC compliance is not required.

Compared with DMP3017SFGQ, DMP3011SFVWQ offers lower on-resistance in a smaller footprint but trades off thermal performance, while DMG1012T sacrifices voltage rating, qualification, and thermal capability for ultra-low-cost consumer use - making DMP3017SFGQ the balanced choice for AEC-Q101–compliant, medium-power industrial and automotive power switches.

Availability

DMP3017SFGQ is available at Aetrix Electronics and suitable for automotive LED driver modules, USB-C power delivery subsystems, and industrial DC-DC converter designs requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for DMP3017SFGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The Power MOSFET product line targets high-efficiency power conversion and protection, emphasizing low R_DS(ON), fast switching, and automotive-grade reliability for DC-DC, LED lighting, and battery management systems.

FAQ

What is the maximum continuous drain current at 100°C ambient temperature?

At T_A = +100°C, the maximum continuous drain current is −6.2 A, derived from derating curves in the datasheet (R_θJA = 60 °C/W, P_D = 2.2 W at 25°C, T_J(max) = +150°C). This value assumes FR-4 board with 2 oz copper and 1-inch² pad per note 5.

Is the DMP3017SFGQ pinout compatible with SO-8 footprints?

No - the PowerDI3333-8 package has different pin spacing (0.65 mm pitch), terminal count (8 pins), and layout (4-drain/3-source/1-gate) versus SO-8 (1.27 mm pitch, 8 pins in linear row). The datasheet explicitly states it occupies 33% of SO-8 board area, confirming incompatible mechanical fit.

Does this MOSFET require an external gate resistor for stability in 500 kHz DC-DC applications?

Yes - although R_g is specified as 5.1–12 Ω, a 10 Ω external series gate resistor is recommended to dampen ringing caused by L_stray and C_iss resonance, especially given its 2246 pF C_iss and fast 7.5 ns t_D(ON); this prevents shoot-through in synchronous buck topologies.

How does the body diode performance compare to discrete Schottky diodes in reverse recovery?

The body diode achieves t_rr = 20 ns and Q_rr = 9.5 nC at I_S = −11.5 A, outperforming most 30 V Schottky diodes (typically 35–60 ns t_rr). This reduces switching loss and EMI in freewheeling paths, though forward voltage (−0.7 V) is higher than Schottky (−0.35 V), favoring use in low-duty-cycle recovery scenarios.

DMP3017SFGQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2246 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 940mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMP3017SFGQ-7 FAQ

1.How can I place an order for DMP3017SFGQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3017SFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3017SFGQ-7 reliable?

The price and inventory of DMP3017SFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3017SFGQ-7 is usually 5 days.

3.What payment methods are accepted for DMP3017SFGQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3017SFGQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3017SFGQ-7?

DMP3017SFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3017SFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3017SFGQ-7?

For technical support, including DMP3017SFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3017SFGQ-7 requirements.

6.How does Aetrix verify that DMP3017SFGQ-7 is sourced from the original manufacturer or authorized distributors?

All DMP3017SFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3017SFGQ-7 meets industry standards.

7.What is the process for return or replacement of DMP3017SFGQ-7?

All DMP3017SFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3017SFGQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3017SFGQ-7 part is unused and in its original packaging.

Return procedure for DMP3017SFGQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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