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Diodes Incorporated DMP3025SFDF-7
- Part No.:
- DMP3025SFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP3025SFDF-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:2,256
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Product details
Overview
DMP3025SFDF from Diodes Incorporated is a P-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring -30V VDSS, 19mΩ RDS(ON) @ VGS = -10V, and -8.6A ID at TA = +25°C. It serves as a low-side load switch or synchronous rectifier in compact DC-DC converters and battery protection circuits.
For engineers reviewing the DMP3025SFDF datasheet, DMP3025SFDF pinout, DMP3025SFDF application, or DMP3025SFDF equivalent, key selection criteria include gate threshold voltage (-1.2 to -2.6V), thermal resistance (59.7°C/W with copper plate), ESD-protected gate, and U-DFN2020-6 package compatibility with space-constrained portable electronics designs.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching performance. Its -2.6V maximum VGS(TH) enables reliable turn-on with standard logic-level drive, and its 1031pF Ciss supports efficient gate driving in high-frequency buck regulators.
The device integrates an intrinsic body diode with -0.7V typical VSD at -2A, supporting bidirectional current flow in battery back-up paths. Its 31mJ EAS rating and -25A IAS capability provide robustness against inductive switching transients in automotive and industrial power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - Withstands up to 30V reverse drain-source voltage without breakdown in blocking state. |
| RDS(ON) | 19mΩ @ VGS = -10V - Enables <150mW conduction loss at 8.6A, critical for thermally constrained PCBs. |
| ID (max) | -8.6A @ TA = +25°C - Supports continuous load currents up to 8.6A with 2.1W power dissipation on 1-inch copper pad. |
| VGS(TH) | -1.2 to -2.6V - Ensures full enhancement with 3.3V or 5V logic-level gate drive, eliminating need for level shifters. |
| Ciss | 1031pF - Determines gate drive energy requirement; ~20nC Qg at -10V enables <100ns switching transitions with 6Ω gate resistor. |
| RθJA | 59.7°C/W - Junction-to-ambient thermal resistance with enhanced copper layout, enabling operation up to +125°C ambient in sealed enclosures. |
| EAS | 31mJ - Avalanche energy rating confirms safe single-pulse inductive turn-off capability in motor driver H-bridge freewheeling paths. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0mm × 2.0mm × 0.6mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top-left corner marker) | Source | Primary current return path; internally connected to exposed thermal pad for enhanced heat transfer to PCB. |
| Pin 2 | Gate | Control terminal; ESD-protected input requiring ≤±25V bias; low 28Ω Rg minimizes gate ringing. |
| Pin 3 | Drain | High-side or low-side power node; connects to load or supply rail; rated for -30V repetitive blocking. |
| Pin 4 | Source | Second source connection; paralleled with Pin 1 to reduce package inductance and improve current sharing. |
| Pin 5 | Drain | Second drain connection; paralleled with Pin 3 to lower RDS(ON) and enhance thermal spreading. |
| Pin 6 | Gate | Redundant gate terminal; electrically tied to Pin 2 to reduce gate loop inductance and improve high-frequency stability. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 package | 0.6mm height enables integration into ultra-thin consumer devices such as wireless earbuds and wearables. |
| ESD-protected gate structure | HBM rating >2kV ensures robustness during board assembly and handling without additional external protection. |
| Halogen- and antimony-free "Green" construction | Meets RoHS 3 (2015/863/EU) with <900ppm Br, <900ppm Cl, and <1000ppm Sb, supporting eco-compliant end-product certifications. |
| Optimized RDS(ON)/Qg ratio | 19mΩ/20nC delivers superior figure-of-merit for high-frequency synchronous rectification in 1–3MHz DC-DC converters. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET configured as ideal diode controller interface, activated by system supervisor IC. Use Value: 19mΩ RDS(ON) limits voltage drop to <160mV at 8A, preserving battery runtime and enabling accurate fuel gauging. | Use Scenario: VBUS path switching in USB-C receptacles supporting 3A/5V and 3A/9V PD profiles. IC Role / Device Role / Timing Role: Bidirectional load switch managing power direction between source and sink ports during role swap. Use Value: -0.7V VSD body diode forward voltage ensures minimal forward drop during dead-time conduction, reducing heat generation. |
| Industrial Sensor Node Power Rail | Wireless Earbud Charging Case |
Use Scenario: Always-on 3.3V supply regulation for LoRaWAN sensor nodes powered by primary lithium thionyl chloride cells. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power to RF transceiver and MCU during deep-sleep cycles. Use Value: -2.6V max VGS(TH) guarantees reliable turn-on with 3.3V GPIO, eliminating external bias circuitry and saving BOM cost. | Use Scenario: Output stage of 5V boost converter supplying charging current to TWS earbud batteries. IC Role / Device Role / Timing Role: Synchronous rectifier in continuous-conduction-mode (CCM) boost topology operating at 2MHz. Use Value: 1031pF Ciss and 20nC Qg enable efficient 2MHz operation with <5% gate drive loss, extending case battery life per charge cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(ON) = 22mΩ @ -4.5V; higher 2.5V VGS(TH) max; same U-DFN2020-6 package. | Slightly higher conduction loss at 3.3V gate drive; less suitable for low-voltage logic control. | Select when gate drive is ≥4.5V and marginally higher RDS(ON) is acceptable for cost optimization. |
| Si2301DDS-T1-GE3 | RDS(ON) = 115mΩ @ -4.5V; much higher on-resistance; SO-23 package (larger footprint). | Not viable for high-current DC-DC output stages; limited to <1A loads due to thermal constraints. | Choose only for ultra-low-cost, low-power applications where 0.6mm profile is not required. |
Compared with DMG3415L-7 and Si2301DDS-T1-GE3, DMP3025SFDF delivers the lowest RDS(ON) in a 2×2mm footprint with verified ESD protection and tighter VGS(TH) distribution-making it optimal for space- and efficiency-critical 3.3V-controlled power switches.
Availability
DMP3025SFDF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial sensor node power rails requiring stable component supply across multi-year production cycles.
Supply support for DMP3025SFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, high-efficiency power conversion in portable and battery-powered applications where thermal and spatial constraints dominate design decisions.
FAQ
What is the maximum allowable gate-source voltage for DMP3025SFDF?
The absolute maximum VGS rating is ±25V, but operation above ±20V is not recommended for long-term reliability. The device is characterized for gate drive between -10V and -4.5V in normal switching applications, with -10V providing lowest RDS(ON) and -4.5V sufficient for most logic-level interfaces. Exceeding ±20V risks accelerated gate oxide degradation.
Can DMP3025SFDF be used in avalanche mode for inductive load switching?
Yes-DMP3025SFDF is rated for single-pulse avalanche energy of 31mJ with IAS = -25A under specified test conditions (L = 0.1mH). This capability supports safe turn-off of inductive loads like solenoids or relay coils, provided pulse duration and duty cycle remain within SOA limits shown in Figure 12 and junction temperature stays below 150°C.
Is the U-DFN2020-6 (Type F) package lead-free and RoHS compliant?
Yes-DMP3025SFDF is fully RoHS 3 compliant (2015/863/EU) with no purposely added lead, halogen, or antimony. Its molding compound meets UL 94V-0 flammability rating, and terminal finish is NiPdAu over copper, ensuring solderability per MIL-STD-202 Method 208 and compatibility with standard reflow profiles.
How does thermal performance differ between minimum pad layout and enhanced copper layout?
With minimum FR-4 pad layout (2oz copper), RθJA is 95.7°C/W; with 1-inch square copper plate, it improves to 59.7°C/W-a 38% reduction. This translates to ~22°C lower junction temperature at 2.1W dissipation, directly extending lifetime and enabling higher ambient operation in sealed enclosures or stacked PCB assemblies.
DMP3025SFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1031 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP3025SFDF-7 FAQ
1.How can I place an order for DMP3025SFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP3025SFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP3025SFDF-7 reliable?
The price and inventory of DMP3025SFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3025SFDF-7 is usually 5 days.
3.What payment methods are accepted for DMP3025SFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3025SFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP3025SFDF-7?
DMP3025SFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP3025SFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP3025SFDF-7?
For technical support, including DMP3025SFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3025SFDF-7 requirements.
6.How does Aetrix verify that DMP3025SFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMP3025SFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3025SFDF-7 meets industry standards.
7.What is the process for return or replacement of DMP3025SFDF-7?
All DMP3025SFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3025SFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP3025SFDF-7 part is unused and in its original packaging.
Return procedure for DMP3025SFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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