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Diodes Incorporated DMP3026SFDE-13
- Part No.:
- DMP3026SFDE-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMP3026SFDE-13.pdf
- Description:
- MOSFET P-CH 30V 10.4A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,746
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Product details
Overview
DMP3026SFDE-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type E) package, rated for -30V VDSS, 19 mΩ RDS(ON) @ VGS = -10V, and -8.7A continuous drain current at +25°C. It features ESD-protected gate, low gate threshold voltage (-1 to -3V), and 0.6mm profile-optimized for compact, high-efficiency power management in space-constrained DC-DC converters and battery management systems.
For engineers reviewing the DMP3026SFDE-13 datasheet, DMP3026SFDE-13 pinout, DMP3026SFDE-13 application, or DMP3026SFDE-13 equivalent, key selection criteria include verified RDS(ON) at -4.5V (-45 mΩ), thermal resistance (RθJA = 61 °C/W with 1-inch2 copper), avalanche energy rating (27 mJ), and JEDEC-qualified reliability for industrial-grade deployment.
Technical Context
This MOSFET operates as a high-side load switch or synchronous rectifier in buck converters and battery protection circuits. Its P-channel architecture enables simple gate drive with logic-level compatibility down to -4.5V, while the integrated ESD protection (±10 µA IGSS) ensures robustness against handling transients without external clamping.
The device's dynamic characteristics-including 19.6 nC total gate charge (Qg) at VGS = -10V, 112 pF Crss, and 26 ns turn-off fall time-support efficient switching up to several hundred kHz. Its normalized RDS(ON) variation remains under 2× across -55°C to +150°C junction temperature, enabling stable performance in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 24V bus applications. |
| RDS(ON) | 19 mΩ @ VGS = -10V - Confirmed on-resistance at full-enhancement; determines conduction loss in high-current paths. |
| ID (max) | -8.7 A @ TA = +25°C - Continuous DC current capability with standard FR-4 PCB layout; sets maximum load-handling capacity. |
| Qg | 19.6 nC @ VGS = -10V - Total gate charge required for full turn-on; directly impacts driver power and switching speed. |
| RθJA | 61 °C/W - Junction-to-ambient thermal resistance with 1-inch² copper pad; enables accurate junction temperature estimation under load. |
| EAS | 27 mJ - Single-pulse avalanche energy rating; supports reliable operation during inductive switching transients. |
| VGS(TH) | -1 to -3 V - Gate threshold voltage range; ensures turn-on with common 3.3V/5V logic-level controllers. |
Pinout & Package
Package: U-DFN2020-6 (Type E), 2.0 mm × 2.0 mm × 0.6 mm, lead-free, halogen-free, RoHS-compliant molded plastic case with NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 6 | Drain (D) | High-current output node; internally connected to exposed thermal pad for enhanced heat dissipation. |
| 3, 4 | Source (S) | Reference node for gate drive; tied to system ground or battery negative in high-side switch configurations. |
| 5 | Gate (G) | Control input; requires <10 µA leakage current compliance and ESD protection per JEDEC JESD22-A114. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 package | 0.6 mm height enables integration into ultra-thin portable electronics and wearables without mechanical interference. |
| Logic-level gate drive | VGS(TH) range (-1 to -3 V) allows direct interface with 3.3V microcontrollers without level-shifting circuitry. |
| ESD-protected gate | ±10 µA IGSS leakage at ±25V confirms integrated gate oxide protection per HBM Class 2 (>2 kV). |
| JEDEC-qualified reliability | Qualified to AEC-Q standards for high-reliability industrial use; not automotive-qualified but meets JEDEC stress test requirements. |
| Green compound construction | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) complies with global environmental directives. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in lithium-ion battery packs for smartphones and tablets. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as bidirectional load switch with fast fault response. Use Value: 19 mΩ RDS(ON) minimizes voltage drop across protection FET, preserving battery runtime and thermal margin. | Use Scenario: Input power path selection in dual-source USB-C PD adapters supporting 20V/3A operation. IC Role / Device Role / Timing Role: Primary high-side switch controlling VBUS routing between AC adapter and battery charger IC. Use Value: -30V VDSS rating safely handles 20V PD transients; 45 mΩ RDS(ON) @ -4.5V supports logic-level enable from PD controller. |
| Industrial DC-DC Buck Converter | Smart Home Sensor Node Power Management |
Use Scenario: Synchronous rectification in 12V-to-3.3V buck regulators powering PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 27 mJ EAS withstands inductive kickback during PWM transitions; 61 °C/W RθJA sustains >1A continuous current without heatsink. | Use Scenario: Load switching for BLE SoC and environmental sensors in battery-powered smart thermostats. IC Role / Device Role / Timing Role: Controlled power gating of peripheral subsystems to extend shelf life and operational runtime. Use Value: 0.6 mm profile fits 1.6 mm board thickness constraints; -3V VGS(TH) ensures clean turn-on with 3.3V GPIO from MCU. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(ON) = 22 mΩ @ -4.5V; slightly higher on-resistance and larger U-DFN2020-6 footprint (2.1 mm × 2.1 mm). | Same logic-level drive but lower avalanche energy (18 mJ); less suitable for inductive switching. | Prefer when cost sensitivity outweighs marginal RDS(ON) penalty and avalanche margin is non-critical. |
| Si2301DDS-T1-GE3 | RDS(ON) = 115 mΩ @ -4.5V; significantly higher on-resistance and lower ID rating (-2.7A). | Targeted at low-power signal switching, not power conversion; lacks JEDEC high-reliability qualification. | Select only for sub-500mA loads where thermal budget permits higher conduction loss. |
Compared with DMG3415L-7 and Si2301DDS-T1-GE3, DMP3026SFDE-13 delivers superior conduction efficiency at -4.5V, higher current capability, and verified avalanche robustness-making it the preferred choice for industrial DC-DC and battery protection designs requiring both performance and reliability.
Availability
DMP3026SFDE-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery switches, and industrial DC-DC converters requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMP3026SFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
This part belongs to Diodes' logic-level P-channel MOSFET product line, engineered specifically for compact, high-efficiency power switching in portable, industrial, and computing systems where low RDS(ON), small footprint, and JEDEC-qualified reliability are essential.
FAQ
What is the maximum allowable gate-source voltage for DMP3026SFDE-13?
The absolute maximum VGS rating is ±25 V, as specified in the datasheet's Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to -10 V for full enhancement and kept within -4.5 V to -10 V for logic-compatible switching, avoiding undershoot below -25 V or overshoot above +25 V.
Does DMP3026SFDE-13 have an integrated body diode, and what is its forward voltage?
Yes, it includes a built-in source-drain body diode with typical VSD = -0.7 V at IS = -1.0 A and TJ = +25°C. The diode is rated for continuous source current up to -2.0 A and supports reverse recovery time (trr) of 10 ns under specified test conditions (IF = -9.5 A, di/dt = 100 A/µs), making it suitable for synchronous rectification.
Can DMP3026SFDE-13 be used in automotive applications?
No-DMP3026SFDE-13 is not AEC-Q101 qualified. While it meets JEDEC high-reliability standards, Diodes Incorporated offers automotive-grade variants (e.g., DMP3026SFDEQ) with AEC-Q101 qualification, PPAP documentation, and IATF 16949 manufacturing certification. Use only the Q-suffix version for automotive deployments.
What PCB layout recommendations ensure optimal thermal performance?
Mount the device on FR-4 with 2 oz copper and a 1-inch² copper pour connected to the exposed drain pad (pins 1,2,6). Follow Diodes' suggested pad layout: 0.65 mm pitch, 0.40 mm × 0.50 mm solder pads, and 0.82 mm × 0.92 mm thermal land. Avoid solder mask dams over the thermal pad to maximize thermal transfer to the board.
DMP3026SFDE-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.6 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1204 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMP3026SFDE-13 FAQ
1.How can I place an order for DMP3026SFDE-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP3026SFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP3026SFDE-13 reliable?
The price and inventory of DMP3026SFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3026SFDE-13 is usually 5 days.
3.What payment methods are accepted for DMP3026SFDE-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3026SFDE-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP3026SFDE-13?
DMP3026SFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP3026SFDE-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP3026SFDE-13?
For technical support, including DMP3026SFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3026SFDE-13 requirements.
6.How does Aetrix verify that DMP3026SFDE-13 is sourced from the original manufacturer or authorized distributors?
All DMP3026SFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3026SFDE-13 meets industry standards.
7.What is the process for return or replacement of DMP3026SFDE-13?
All DMP3026SFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3026SFDE-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP3026SFDE-13 part is unused and in its original packaging.
Return procedure for DMP3026SFDE-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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