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Diodes Incorporated DMP3045LFVW-13

Part No.:
DMP3045LFVW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMP3045LFVW-13.pdf
Description:
MOSFET BVDSS: 25V~30V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,362

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Product details

Overview

DMP3045LFVW-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in PowerDI®3333-8 package, delivering 42 mΩ RDS(ON) at VGS = −10 V and −19.9 A continuous drain current at TC = +25°C. It serves as a high-efficiency load switch in power management circuits, supporting compact DC-DC converter outputs and battery protection paths.

For engineers reviewing the DMP3045LFVW-13 datasheet, DMP3045LFVW-13 pinout, DMP3045LFVW-13 application, or DMP3045LFVW-13 equivalent, key selection criteria include verified RDS(ON) at −4.5 V (65 mΩ), thermal resistance RθJC = 5°C/W, body diode forward voltage of −0.7 V at −1 A, and ESD-protected gate with ±20 V VGSS rating.

Technical Context

This MOSFET employs a trench-gate process optimized for low conduction loss while maintaining fast switching performance: tD(ON) = 4.1 ns, tF = 13.1 ns, and Qg = 13.6 nC at VGS = −10 V. Its PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper.

The device features a −1.0 V to −2.1 V gate threshold (VGS(TH)) and exhibits normalized RDS(ON) variation of ≤2.0× across −55°C to +150°C junction temperature, enabling stable operation in automotive cabin and industrial control environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −30 V - Withstands up to −30 V drain-source blocking voltage before avalanche onset.
RDS(ON) @ VGS = −10 V 42 mΩ max - Enables <0.5 W conduction loss at −5 A continuous current in compact layouts.
RDS(ON) @ VGS = −4.5 V 65 mΩ max - Supports logic-level drive from 3.3 V/5 V microcontrollers without level-shifting.
ID (TC = +25°C) −19.9 A - Sustains high pulsed loads when mounted on thermally enhanced PCBs with exposed drain pad.
RθJC 5°C/W - Allows direct junction-to-PCB thermal path, critical for thermal design in space-constrained power stages.
Qg @ VGS = −10 V 13.6 nC - Determines gate driver current requirement for <10 ns turn-on in high-frequency SMPS.
VSD @ IS = −1 A −0.7 V typ - Limits reverse recovery losses in synchronous rectification and back-to-back switch configurations.

Pinout & Package

Package: PowerDI®3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad (Pin 1–3 and 6–8 are source; Pin 4 and 5 are drain; Pin 7 is gate). Dimensions: 3.30 mm × 3.30 mm × 0.80 mm.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 6, 7, 8 Source (S) Common source node tied to internal die substrate; electrically and thermally connected to PCB ground plane via multiple pads.
4, 5 Drain (D) High-current drain connection routed to exposed copper pad; primary heat extraction path to PCB.
7 Gate (G) Control terminal with ESD protection diode; requires <13.6 nC charge for full enhancement at −10 V.

Key Features

Feature Design Value
Low RDS(ON) at −4.5 V 65 mΩ max enables direct interfacing with 3.3 V GPIOs in battery-powered systems without gate boosting.
Thermally efficient package RθJC = 5°C/W allows >2× higher power density than SO-8 equivalents in same board area.
ESD-protected gate ±20 V VGSS rating and integrated protection diode reduce risk of handling damage during assembly.
Green, lead-free construction Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IPC-1752A Class 2 requirements.

Applications

USB Type-C Power Delivery Switch Automotive Body Control Module Load Switch

Use Scenario: Bidirectional 20 V/3 A power path control between USB-C port and system rail with reverse-current blocking.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling VBUS routing; operates in linear mode during soft-start and saturated mode during steady-state.

Use Value: 65 mΩ RDS(ON) at −4.5 V ensures <100 mW loss at 3 A, minimizing thermal rise in sealed enclosures.

Use Scenario: Controlled 12 V supply enable for door lock actuators, interior lighting, and window lift motors.

IC Role / Device Role / Timing Role: Low-side or high-side load switch with controlled slew rate to suppress inductive kickback and EMC emissions.

Use Value: −76 A pulsed drain current rating supports motor stall conditions without device failure.

Industrial PLC Digital Output Driver Portable Medical Device Battery Protection

Use Scenario: 24 V DC output stage driving solenoids and relays with programmable current limiting and short-circuit protection.

IC Role / Device Role / Timing Role: High-side switch with integrated body diode providing freewheeling path during inductive load turn-off.

Use Value: 30.8 mJ avalanche energy rating absorbs inductive energy spikes without external snubbers.

Use Scenario: Reverse-polarity and over-discharge protection in handheld diagnostic tools using single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration for bidirectional blocking; gate driven by dedicated protection IC.

Use Value: −0.7 V VSD minimizes forward drop in protection path, preserving battery runtime and voltage headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3045LFG-7 Same RDS(ON) specs but in SOT-23-6 package; RθJA = 135°C/W (no exposed drain pad). Limited to <1.5 A continuous current due to higher thermal resistance; unsuitable for >2 W dissipation. Select only for ultra-low-cost, low-power signal switching where board space is secondary to cost.
SI3457DV-T1-GE3 45 mΩ @ −10 V, but 85 mΩ @ −4.5 V; Qg = 10.5 nC; SO-8 package with RθJC = 12°C/W. Higher gate charge and larger footprint reduce switching efficiency and layout density in portable designs. Prefer for legacy SO-8 footprints requiring drop-in replacement with moderate thermal margin.

Compared with DMN3045LFG-7 and SI3457DV-T1-GE3, DMP3045LFVW-13 delivers superior thermal performance (RθJC = 5°C/W) and logic-level drive capability (65 mΩ @ −4.5 V) in a 3.3 mm² footprint-critical for high-density power rails in medical and automotive modules.

Availability

DMP3045LFVW-13 is available at Aetrix Electronics and suitable for USB Power Delivery systems, automotive body electronics, industrial PLC outputs, and portable medical battery protection requiring stable component supply and long-term lifecycle support.

Supply support for DMP3045LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and ISO 9001 standards.

This part belongs to Diodes' PowerMOS™ portfolio, engineered for high-efficiency, thermally constrained power switching in automotive, industrial, and consumer applications where low RDS(ON) and small form factor are essential.

FAQ

What is the maximum safe operating temperature for DMP3045LFVW-13?

The device supports junction temperatures from −55°C to +150°C. At TJ = +150°C, RDS(ON) increases to ~2× its 25°C value (≤84 mΩ at −10 V), and continuous drain current derates to −15.9 A at TC = +70°C. Thermal design must maintain TJ ≤ 150°C under worst-case ambient and power dissipation.

Can DMP3045LFVW-13 be used in synchronous rectification?

Yes-the MOSFET's low VSD (−0.7 V typ at −1 A) and fast reverse recovery time (tRR = 12.7 ns) make it suitable for low-voltage synchronous rectification in buck converters. Its body diode conducts during dead-time, and the channel carries current during active periods when properly gated.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-it is rated for moisture sensitivity level 1 per J-STD-020 and withstands peak reflow temperatures up to 260°C. The matte tin finish on copper leadframe ensures reliable solderability per MIL-STD-202, Method 208, and the package's UL 94V-0 molding compound resists thermal degradation during standard lead-free reflow.

Does DMP3045LFVW-13 meet automotive qualification standards?

The standard DMP3045LFVW-13 is not AEC-Q101 qualified. However, the automotive-grade variant DMP3045LFVWQ is separately qualified to AEC-Q101, manufactured in IATF 16949 facilities, and supports PPAP documentation. For automotive use, specify the Q-suffix version and consult Diodes' automotive product definitions page.

DMP3045LFVW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta), 19.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
42mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
782 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
900mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMP3045LFVW-13 FAQ

1.How can I place an order for DMP3045LFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3045LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3045LFVW-13 reliable?

The price and inventory of DMP3045LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3045LFVW-13 is usually 5 days.

3.What payment methods are accepted for DMP3045LFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3045LFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3045LFVW-13?

DMP3045LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3045LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3045LFVW-13?

For technical support, including DMP3045LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3045LFVW-13 requirements.

6.How does Aetrix verify that DMP3045LFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMP3045LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3045LFVW-13 meets industry standards.

7.What is the process for return or replacement of DMP3045LFVW-13?

All DMP3045LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3045LFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3045LFVW-13 part is unused and in its original packaging.

Return procedure for DMP3045LFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP3045LFVW-13 Tags

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  • Diodes Incorporated
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