Diodes Incorporated DMP3045LFVWQ-13

Overview

DMP3045LFVWQ-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET qualified to AEC-Q101, with R_DS(ON) = 42 mΩ @ V_GS = −10 V, I_D = −19.9 A at T_C = +25°C, and housed in a thermally efficient PowerDI®3333-8 package. It serves as a high-density power switch in automotive backlighting and DC-DC converter output stages.

For engineers reviewing the DMP3045LFVWQ-13 datasheet, DMP3045LFVWQ-13 pinout, DMP3045LFVWQ-13 application, or DMP3045LFVWQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (Q_g = 13.6 nC @ V_GS = −10 V), −30 V V_DSS, and thermal resistance R_θJC = 5 °C/W for high-reliability automotive power management.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) and fast switching in P-channel configurations. Its gate threshold voltage range of −1.0 V to −2.1 V enables robust turn-on control with standard −10 V or −4.5 V logic-level drive, while ESD-protected gate structure ensures handling safety during assembly.

The device integrates a body diode with V_SD = −0.7 V to −1.2 V at I_S = −1 A and supports avalanche energy rating of 30.8 mJ (L = 1 mH), making it suitable for inductive load switching in automotive power rails where transient robustness is required.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Compared with DMT3006LPSQ-13 and DMTH3006LPSQ-13, the DMP3045LFVWQ-13 offers optimal balance of compact size (3.3 mm²), moderate R_DS(ON), and low Q_g, making it ideal for space-constrained, medium-power automotive functions where thermal and layout constraints outweigh ultra-low on-resistance needs.

Availability

DMP3045LFVWQ-13 is available at Aetrix Electronics and suitable for automotive LCD backlighting, 12 V DC-DC converter output stages, and body control module load driving requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMP3045LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMP3045LFVWQ belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, designed specifically for automotive power management where thermal efficiency, small footprint, and transient robustness are critical.

FAQ

What is the maximum allowable junction temperature for DMP3045LFVWQ-13?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent degradation of the silicon die and packaging integrity. Derating curves in Figure 5 and Figure 7 show R_DS(ON) increase with temperature, requiring thermal design to maintain T_J ≤ 150°C under worst-case ambient and power dissipation conditions.

Can DMP3045LFVWQ-13 be used in high-frequency PWM applications above 500 kHz?

Yes - its total gate charge of 13.6 nC @ V_GS = −10 V and low Crss (74 pF) enable switching at frequencies up to 1 MHz in well-designed gate drive circuits. However, dynamic losses rise significantly above 500 kHz; layout must minimize gate loop inductance and ensure adequate gate drive strength (≥1 A peak) to achieve t_F = 13.1 ns and avoid shoot-through.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to Pin 5 (Drain) and forms the primary electrical and thermal path for the drain node. It must be soldered to a dedicated PCB copper pour tied to the system's high-side power rail or ground reference, depending on circuit topology, and must not be shorted to source or gate traces.

Does DMP3045LFVWQ-13 require external gate resistors for automotive EMI compliance?

Yes - while not mandatory for basic operation, a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 74 pF) and PCB trace inductance. This reduces high-frequency spectral content during switching edges, helping meet CISPR 25 Class 5 radiated emissions limits common in automotive EMC testing.