Diodes Incorporated DMP3056L-13
- Part No.:
- DMP3056L-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMP3056L-13.pdf
- Description:
- MOSFET P-CH 30V 4.3A SOT23
- Quantity:
- Payment:

- Shipping:

Inventory:4,256
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Product details
Overview
DMP3056L-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SOT23 package, featuring 50 mΩ RDS(ON) at VGS = −10 V, −4.3 A continuous drain current at 25°C, and low gate threshold voltage (−1 to −2.1 V). It serves as a high-efficiency load switch or power rail controller in compact DC-DC converter output stages.
For engineers reviewing the DMP3056L-13 datasheet, DMP3056L-13 pinout, DMP3056L-13 application, or DMP3056L-13 equivalent, key selection criteria include verified RDS(ON) at −4.5 V, thermal resistance (91 °C/W), fast switching (tR = 4.7 ns), and RoHS-compliant SOT23 footprint compatibility with space-constrained PCB layouts.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low on-resistance while maintaining controlled gate charge (QG = 5.8 nC at VGS = −4.5 V) and low input capacitance (Ciss = 642 pF). Its negative VGS(TH) enables direct logic-level drive from 3.3 V or 5 V microcontrollers without level-shifting.
The device integrates an intrinsic body diode with VSD = −1.2 V at −1.7 A and exhibits stable RDS(ON) over temperature (1.0× at 150°C vs. 25°C under VGS = −4.5 V), supporting reliable operation in ambient temperatures up to +125°C in thermally constrained enclosures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - Withstands reverse-biased drain-source voltage up to 30 V in high-side switch or reverse-polarity protection configurations. |
| RDS(ON) | 50 mΩ @ VGS = −10 V - Enables ≤215 mW conduction loss at −4.3 A, critical for thermally limited SOT23 applications. |
| ID (continuous) | −4.3 A @ TA = 25°C - Supports sustained load currents in USB-powered peripherals and battery management circuits. |
| QG | 5.8 nC @ VGS = −4.5 V - Allows efficient gate drive with low-current GPIOs and minimizes switching energy loss in PWM control. |
| RθJA | 91 °C/W - Defines junction-to-ambient thermal rise per watt; requires minimal copper area for ≤1.38 W dissipation in standard FR-4 layout. |
| VGS(TH) | −1 to −2.1 V - Ensures full enhancement with 3.3 V logic outputs, eliminating need for external gate pull-up resistors in low-voltage systems. |
Pinout & Package
Package: SOT23 (Standard), surface-mount plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main current path output terminal | Connected to high-side power rail or load return; carries full switched current and must be routed with adequate copper width. |
| 2 (Gate) | Control input for channel conduction | Accepts negative VGS to turn on; requires low-impedance drive due to 15 Ω gate resistance and 642 pF input capacitance. |
| 3 (Source) | Reference node for gate control and current return | Biased at system VCC or ground depending on high/low-side configuration; forms cathode of integrated body diode. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at logic-level drive | 70 mΩ @ VGS = −4.5 V - Enables use with 3.3 V MCU I/O without gate driver, reducing BOM count in portable electronics. |
| Fast switching speed | tR = 4.7 ns, tF = 18.2 ns - Supports >1 MHz PWM frequencies in synchronous buck converters with minimal dead-time loss. |
| Low gate leakage | IGSS ≤ ±100 nA @ VGS = ±20 V - Prevents unintended turn-on during long standby periods in always-on IoT sensor nodes. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A material declaration requirements for automotive and medical OEMs. |
Applications
| USB Power Switching | Reverse Polarity Protection |
|---|---|
Use Scenario: Selective enable/disable of 5 V USB VBUS to downstream peripherals in host controllers or hubs. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling power delivery path with no external components required. Use Value: Eliminates need for discrete resistor-divider networks and reduces solution size by 40% versus dual-MOSFET designs. |
Use Scenario: Protecting 3.3 V or 5 V subsystems from accidental reverse battery connection in portable instrumentation. IC Role / Device Role / Timing Role: Low-loss series blocking element placed between battery terminal and system input rail. Use Value: Achieves <150 mV forward drop at 2 A, minimizing voltage loss compared to Schottky diode solutions. |
| DC-DC Converter Synchronous Rectifier | Hot-Swap Controller Back-End Stage |
Use Scenario: Replacement of freewheeling diode in non-isolated buck converter output stage operating at 500 kHz–1 MHz. IC Role / Device Role / Timing Role: Synchronously commutated low-side switch driven by controller's complementary output. Use Value: Reduces conduction loss by 65% versus 40 V Schottky diode, improving efficiency from 89% to 93% at 3 A load. |
Use Scenario: Inrush current limiting and fault isolation in modular industrial I/O modules with hot-plug capability. IC Role / Device Role / Timing Role: Controlled turn-on switch placed between backplane power and module input capacitor bank. Use Value: Limits peak inrush to <1.5 A using gate slew-rate control, preventing backplane voltage sag during insertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(ON) = 42 mΩ @ −4.5 V; higher QG = 10.5 nC; same SOT23 package | Better conduction loss but slower switching; less suitable for >500 kHz PWM | Select when lowest static loss dominates over switching frequency constraints. |
| SI2301DS-T1-BE3 | RDS(ON) = 115 mΩ @ −4.5 V; lower VGS(TH) = −0.45 V; same SOT23 footprint | Higher on-resistance but enhanced gate sensitivity; prone to partial turn-on near logic thresholds | Prefer only in ultra-low-voltage (1.8–2.5 V) gate drive scenarios where margin is critical. |
Compared with DMG3415L-7 and SI2301DS-T1-BE3, DMP3056L-13 delivers optimal balance of RDS(ON), QG, and VGS(TH) for 3.3 V–5 V logic-driven load switching-enabling faster transitions than SI2301DS and lower dynamic loss than DMG3415L in mid-frequency DC-DC applications.
Availability
DMP3056L-13 is available at Aetrix Electronics and suitable for USB power switching, reverse polarity protection, and DC-DC converter synchronous rectification requiring stable component supply across production lifecycles.
Supply support for DMP3056L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMP3056L belongs to Diodes' logic-level P-channel MOSFET product line, engineered specifically for space-constrained, high-efficiency power management in consumer, computing, and industrial end-equipment.
FAQ
What is the maximum safe operating junction temperature for DMP3056L-13?
The absolute maximum junction temperature is +150°C, validated per JEDEC JESD22-A104. Operation above +125°C requires derating of ID and PD based on Figure 5 and Figure 7 in DS37386 Rev. 6–2; thermal vias and ≥1 in² 2 oz copper are recommended for sustained 1.38 W dissipation.
Can DMP3056L-13 be used in high-side switch configurations with 3.3 V microcontroller GPIOs?
Yes-its VGS(TH) range (−1 to −2.1 V) ensures full enhancement with 3.3 V logic outputs driving the gate negative relative to source. A 10 kΩ pull-down resistor on gate is recommended to prevent floating during reset, and gate drive impedance must remain ≤100 Ω for tR/tF compliance.
Does DMP3056L-13 include built-in ESD protection?
No-this MOSFET lacks on-chip ESD protection structures. Per DS37386 Section 1, handling requires ANSI/ESDA/JEDEC JS-001 Class 1B compliance; board-level TVS diodes or series resistors are mandatory for I/O pins exposed to user-accessible connectors or cables.
Is the SOT23 package of DMP3056L-13 compatible with reflow profiles for lead-free assembly?
Yes-the device is fully RoHS 3 compliant (≤1000 ppm antimony, ≤900 ppm bromine/chlorine) and qualified for Pb-free reflow per J-STD-020, Level 1 moisture sensitivity. Peak temperature must not exceed 260°C for ≤30 seconds, with ramp rates ≤3°C/s before and after reflow.
DMP3056L-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.8 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 642 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.38W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMP3056L-13 FAQ
1.How can I place an order for DMP3056L-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP3056L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP3056L-13 reliable?
The price and inventory of DMP3056L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3056L-13 is usually 5 days.
3.What payment methods are accepted for DMP3056L-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3056L-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP3056L-13?
DMP3056L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP3056L-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP3056L-13?
For technical support, including DMP3056L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3056L-13 requirements.
6.How does Aetrix verify that DMP3056L-13 is sourced from the original manufacturer or authorized distributors?
All DMP3056L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3056L-13 meets industry standards.
7.What is the process for return or replacement of DMP3056L-13?
All DMP3056L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3056L-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP3056L-13 part is unused and in its original packaging.
Return procedure for DMP3056L-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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