Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP3056L-13

Part No.:
DMP3056L-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMP3056L-13.pdf
Description:
MOSFET P-CH 30V 4.3A SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,256

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP3056L-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SOT23 package, featuring 50 mΩ RDS(ON) at VGS = −10 V, −4.3 A continuous drain current at 25°C, and low gate threshold voltage (−1 to −2.1 V). It serves as a high-efficiency load switch or power rail controller in compact DC-DC converter output stages.

For engineers reviewing the DMP3056L-13 datasheet, DMP3056L-13 pinout, DMP3056L-13 application, or DMP3056L-13 equivalent, key selection criteria include verified RDS(ON) at −4.5 V, thermal resistance (91 °C/W), fast switching (tR = 4.7 ns), and RoHS-compliant SOT23 footprint compatibility with space-constrained PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance while maintaining controlled gate charge (QG = 5.8 nC at VGS = −4.5 V) and low input capacitance (Ciss = 642 pF). Its negative VGS(TH) enables direct logic-level drive from 3.3 V or 5 V microcontrollers without level-shifting.

The device integrates an intrinsic body diode with VSD = −1.2 V at −1.7 A and exhibits stable RDS(ON) over temperature (1.0× at 150°C vs. 25°C under VGS = −4.5 V), supporting reliable operation in ambient temperatures up to +125°C in thermally constrained enclosures.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −30 V - Withstands reverse-biased drain-source voltage up to 30 V in high-side switch or reverse-polarity protection configurations.
RDS(ON) 50 mΩ @ VGS = −10 V - Enables ≤215 mW conduction loss at −4.3 A, critical for thermally limited SOT23 applications.
ID (continuous) −4.3 A @ TA = 25°C - Supports sustained load currents in USB-powered peripherals and battery management circuits.
QG 5.8 nC @ VGS = −4.5 V - Allows efficient gate drive with low-current GPIOs and minimizes switching energy loss in PWM control.
RθJA 91 °C/W - Defines junction-to-ambient thermal rise per watt; requires minimal copper area for ≤1.38 W dissipation in standard FR-4 layout.
VGS(TH) −1 to −2.1 V - Ensures full enhancement with 3.3 V logic outputs, eliminating need for external gate pull-up resistors in low-voltage systems.

Pinout & Package

Package: SOT23 (Standard), surface-mount plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated; moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (Drain) Main current path output terminal Connected to high-side power rail or load return; carries full switched current and must be routed with adequate copper width.
2 (Gate) Control input for channel conduction Accepts negative VGS to turn on; requires low-impedance drive due to 15 Ω gate resistance and 642 pF input capacitance.
3 (Source) Reference node for gate control and current return Biased at system VCC or ground depending on high/low-side configuration; forms cathode of integrated body diode.

Key Features

Feature Design Value
Low RDS(ON) at logic-level drive 70 mΩ @ VGS = −4.5 V - Enables use with 3.3 V MCU I/O without gate driver, reducing BOM count in portable electronics.
Fast switching speed tR = 4.7 ns, tF = 18.2 ns - Supports >1 MHz PWM frequencies in synchronous buck converters with minimal dead-time loss.
Low gate leakage IGSS ≤ ±100 nA @ VGS = ±20 V - Prevents unintended turn-on during long standby periods in always-on IoT sensor nodes.
Halogen- and antimony-free "Green" construction <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A material declaration requirements for automotive and medical OEMs.

Applications

USB Power Switching Reverse Polarity Protection

Use Scenario: Selective enable/disable of 5 V USB VBUS to downstream peripherals in host controllers or hubs.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling power delivery path with no external components required.

Use Value: Eliminates need for discrete resistor-divider networks and reduces solution size by 40% versus dual-MOSFET designs.

Use Scenario: Protecting 3.3 V or 5 V subsystems from accidental reverse battery connection in portable instrumentation.

IC Role / Device Role / Timing Role: Low-loss series blocking element placed between battery terminal and system input rail.

Use Value: Achieves <150 mV forward drop at 2 A, minimizing voltage loss compared to Schottky diode solutions.

DC-DC Converter Synchronous Rectifier Hot-Swap Controller Back-End Stage

Use Scenario: Replacement of freewheeling diode in non-isolated buck converter output stage operating at 500 kHz–1 MHz.

IC Role / Device Role / Timing Role: Synchronously commutated low-side switch driven by controller's complementary output.

Use Value: Reduces conduction loss by 65% versus 40 V Schottky diode, improving efficiency from 89% to 93% at 3 A load.

Use Scenario: Inrush current limiting and fault isolation in modular industrial I/O modules with hot-plug capability.

IC Role / Device Role / Timing Role: Controlled turn-on switch placed between backplane power and module input capacitor bank.

Use Value: Limits peak inrush to <1.5 A using gate slew-rate control, preventing backplane voltage sag during insertion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMG3415L-7 RDS(ON) = 42 mΩ @ −4.5 V; higher QG = 10.5 nC; same SOT23 package Better conduction loss but slower switching; less suitable for >500 kHz PWM Select when lowest static loss dominates over switching frequency constraints.
SI2301DS-T1-BE3 RDS(ON) = 115 mΩ @ −4.5 V; lower VGS(TH) = −0.45 V; same SOT23 footprint Higher on-resistance but enhanced gate sensitivity; prone to partial turn-on near logic thresholds Prefer only in ultra-low-voltage (1.8–2.5 V) gate drive scenarios where margin is critical.

Compared with DMG3415L-7 and SI2301DS-T1-BE3, DMP3056L-13 delivers optimal balance of RDS(ON), QG, and VGS(TH) for 3.3 V–5 V logic-driven load switching-enabling faster transitions than SI2301DS and lower dynamic loss than DMG3415L in mid-frequency DC-DC applications.

Availability

DMP3056L-13 is available at Aetrix Electronics and suitable for USB power switching, reverse polarity protection, and DC-DC converter synchronous rectification requiring stable component supply across production lifecycles.

Supply support for DMP3056L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP3056L belongs to Diodes' logic-level P-channel MOSFET product line, engineered specifically for space-constrained, high-efficiency power management in consumer, computing, and industrial end-equipment.

FAQ

What is the maximum safe operating junction temperature for DMP3056L-13?

The absolute maximum junction temperature is +150°C, validated per JEDEC JESD22-A104. Operation above +125°C requires derating of ID and PD based on Figure 5 and Figure 7 in DS37386 Rev. 6–2; thermal vias and ≥1 in² 2 oz copper are recommended for sustained 1.38 W dissipation.

Can DMP3056L-13 be used in high-side switch configurations with 3.3 V microcontroller GPIOs?

Yes-its VGS(TH) range (−1 to −2.1 V) ensures full enhancement with 3.3 V logic outputs driving the gate negative relative to source. A 10 kΩ pull-down resistor on gate is recommended to prevent floating during reset, and gate drive impedance must remain ≤100 Ω for tR/tF compliance.

Does DMP3056L-13 include built-in ESD protection?

No-this MOSFET lacks on-chip ESD protection structures. Per DS37386 Section 1, handling requires ANSI/ESDA/JEDEC JS-001 Class 1B compliance; board-level TVS diodes or series resistors are mandatory for I/O pins exposed to user-accessible connectors or cables.

Is the SOT23 package of DMP3056L-13 compatible with reflow profiles for lead-free assembly?

Yes-the device is fully RoHS 3 compliant (≤1000 ppm antimony, ≤900 ppm bromine/chlorine) and qualified for Pb-free reflow per J-STD-020, Level 1 moisture sensitivity. Peak temperature must not exceed 260°C for ≤30 seconds, with ramp rates ≤3°C/s before and after reflow.

DMP3056L-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.8 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
642 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.38W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMP3056L-13 FAQ

1.How can I place an order for DMP3056L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3056L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3056L-13 reliable?

The price and inventory of DMP3056L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3056L-13 is usually 5 days.

3.What payment methods are accepted for DMP3056L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3056L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3056L-13?

DMP3056L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3056L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3056L-13?

For technical support, including DMP3056L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3056L-13 requirements.

6.How does Aetrix verify that DMP3056L-13 is sourced from the original manufacturer or authorized distributors?

All DMP3056L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3056L-13 meets industry standards.

7.What is the process for return or replacement of DMP3056L-13?

All DMP3056L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3056L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3056L-13 part is unused and in its original packaging.

Return procedure for DMP3056L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP3056L-13 Tags

  • DMP3056L-13
  • DMP3056L-13 PDF
  • DMP3056L-13 Datasheet
  • DMP3056L-13 Specifications
  • DMP3056L-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP3056L-13
  • Buy DMP3056L-13
  • DMP3056L-13 Price
  • DMP3056L-13 Distributor
  • DMP3056L-13 Supplier
  • DMP3056L-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER