Diodes Incorporated DMP3056LSDQ-13
- Part No.:
- DMP3056LSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMP3056LSDQ-13.pdf
- Description:
- MOSFET 2P-CH 30V 6.9A 8SO
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMP3056LSDQ-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -30V VDSS, 45mΩ RDS(ON) @ VGS = -10V, and -6.9A continuous drain current at +25°C. It serves as a compact, AEC-Q101-qualified power switch for synchronous buck converters and automotive LED backlighting circuits.
For engineers reviewing the DMP3056LSDQ-13 datasheet, DMP3056LSDQ-13 pinout, DMP3056LSDQ-13 application, or DMP3056LSDQ-13 equivalent, key selection criteria include low gate threshold (-1.0 to -2.1V), fast switching (tF = 14.7ns), dual-channel thermal coupling, and IATF 16949-manufactured traceability for automotive-grade reliability.
Technical Context
This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single SO-8 package with shared thermal mass, enabling high-efficiency synchronous rectification in DC-DC converters where negative gate drive simplifies control. Its low RDS(ON) at -4.5V (65mΩ) supports 5V logic-level drive in battery-powered systems.
The device features low input capacitance (Ciss = 722pF), low gate charge (QG = 6.8nC @ -4.5V), and tight VGS(TH) distribution (±0.2V over temperature), ensuring predictable turn-on timing and reduced gate driver losses in high-frequency (>500kHz) power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - Withstands reverse-biased drain-source voltage up to 30V in automotive 24V systems with margin. |
| RDS(ON) | 45mΩ @ VGS = -10V - Enables ≤0.3W conduction loss at 6.9A, critical for thermally constrained PCB layouts. |
| ID (TA = +25°C) | -6.9A - Supports sustained load current in compact 2.5W power dissipation envelope (RθJA = 50°C/W). |
| VGS(TH) | -1.0 to -2.1V - Ensures full enhancement with standard 3.3V/5V microcontroller GPIO without level-shifting. |
| Ciss | 722pF - Limits gate drive energy requirement to ~3.2nJ per switch cycle at 5V swing, reducing driver IC stress. |
| tF | 14.7ns - Minimizes overlap conduction loss in synchronous buck topologies operating above 1MHz. |
| QG | 6.8nC @ -4.5V - Allows direct drive from low-power MCU pins with <10mA peak gate current capability. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9mm × 6.0mm footprint, 1.27mm pitch). Molded green plastic, matte tin-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main high-side current path for first MOSFET; electrically tied to exposed pad for thermal relief. |
| 2 (S1) | Source of Channel 1 | Return node for Channel 1; referenced to gate drive ground in half-bridge configurations. |
| 3 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires <6.8nC charge for full enhancement at -4.5V. |
| 4 (S2) | Source of Channel 2 | Shared source connection with Pin 2 in common-source dual configuration; enables parallel operation. |
| 5 (D2) | Drain of Channel 2 | Independent drain path for second MOSFET; isolated from D1 for dual-switch applications. |
| 6 (G2) | Gate of Channel 2 | Independent control input; allows asynchronous or complementary switching with Channel 1. |
| 7, 8 | Exposed Pad / Thermal Pad | Internally connected to both drains (D1/D2); must be soldered to PCB copper pour for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-Channel Integration | Two matched MOSFETs in one SO-8 package reduce board area by 40% vs. discrete solutions while maintaining channel isolation. |
| Low Gate Threshold Voltage | VGS(TH) down to -1.0V ensures reliable turn-on with 3.3V logic, eliminating need for gate drivers in low-power applications. |
| Automotive Qualification | AEC-Q101 qualified, PPAP-capable, and manufactured in IATF 16949-certified facilities for under-hood and infotainment use. |
| Green Packaging | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb), RoHS 3 compliant, UL 94V-0 rated. |
| Low Input Leakage | IGSS ≤ ±100nA at ±20V enables stable gate bias in battery-critical systems with multi-year shelf life. |
Applications
| Automotive LED Backlighting | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving segmented CCFL/LED arrays in instrument clusters and center displays with PWM dimming. IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling cathode-side current paths; operates at 1–2kHz PWM frequency. Use Value: Low RDS(ON) minimizes heat generation in sealed enclosures; AEC-Q101 rating ensures 15-year operational life at 105°C ambient. |
Use Scenario: Secondary-side synchronous rectification in 12V-to-3.3V/5V buck regulators for ADAS camera modules. IC Role / Device Role / Timing Role: Dual P-channel replacement for Schottky diodes; driven by controller's complementary outputs. Use Value: 45mΩ on-resistance cuts conduction loss by >60% vs. 0.4V-drop diode, improving efficiency from 88% to 93% at 3A load. |
| USB-C Power Delivery Sink | Industrial PLC I/O Protection |
|
Use Scenario: Reverse-polarity and overvoltage protection for 20V USB-C PD input rails in portable test equipment. IC Role / Device Role / Timing Role: Dual-channel ideal diode controller interface; configured as back-to-back series switch for bidirectional blocking. Use Value: Low VGS(TH) enables fast response to polarity reversal events (<100ns detection-to-turn-off), preventing damage to downstream LDOs. |
Use Scenario: Isolating 24V digital inputs in programmable logic controllers against ESD and field-wiring faults. IC Role / Device Role / Timing Role: Dual-channel high-side switch enabling independent enable/disable of sensor inputs with status feedback. Use Value: 65mΩ RDS(ON) at -4.5V allows direct MCU GPIO control without external level shifters, reducing BOM count by 2 components per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC3025LSDQ-13 | Lower RDS(ON) (30mΩ @ -10V), higher QG (12.5nC), same SO-8 package | Better conduction efficiency but slower switching; unsuitable for >1MHz designs | Select when thermal budget dominates over switching loss, e.g., 12V industrial power supplies with <500kHz switching. |
| SI7850DP-T1-GE3 | Higher VDSS (-40V), higher RDS(ON) (70mΩ @ -4.5V), different pinout (D1/G1/S1/S2/G2/D2) | Requires PCB layout change; better for 36V transient immunity but less efficient at 5V drive | Choose only if system requires -40V rating and layout revision is acceptable; not drop-in compatible. |
Compared with DMC3025LSDQ-13 and SI7850DP-T1-GE3, the DMP3056LSDQ-13 delivers optimal balance of low gate charge (6.8nC), moderate RDS(ON), and automotive qualification-making it the preferred choice for space-constrained, 3.3V/5V-driven automotive DC-DC and backlighting applications.
Availability
DMP3056LSDQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, synchronous buck converter design, and USB-C power delivery sink protection requiring stable component supply across production lifecycles.
Supply support for DMP3056LSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.
The DMP3056LSDQ belongs to Diodes' AEC-Q101-qualified PowerMOS™ family, engineered specifically for high-efficiency, thermally constrained automotive power conversion and lighting control applications.
FAQ
What is the maximum continuous drain current for DMP3056LSDQ-13 at +70°C ambient?
The maximum continuous drain current is -5.8A at TA = +70°C, derated from -6.9A at +25°C per the datasheet's thermal characteristics table. This reflects junction-to-ambient thermal resistance (RθJA = 50°C/W) and SO-8 package limitations under standard PCB mounting conditions.
Is the exposed pad electrically connected, and how should it be handled on the PCB?
Yes-the exposed pad (Pins 7 and 8) is internally connected to both drains (D1 and D2). It must be soldered to a dedicated thermal copper pour on the PCB using at least nine 0.3mm vias to an internal ground plane to achieve the specified RθJA = 50°C/W and prevent thermal runaway during sustained -6.9A operation.
Does DMP3056LSDQ-13 support gate drive from a 3.3V microcontroller without external level shifting?
Yes-its gate threshold voltage range (-1.0V to -2.1V) ensures full enhancement with 3.3V logic-level drive (VGS = -3.3V), delivering RDS(ON) ≤ 65mΩ at -5.0A. No level shifter is required, though gate resistor selection (≥10Ω) is recommended to damp ringing due to low Ciss/Crss ratio.
How does the dual-channel structure affect thermal performance compared to two discrete SO-8 MOSFETs?
Both channels share the same die substrate and thermal pad, resulting in coupled junction temperatures. Under unbalanced loading, the hotter channel raises the other's junction temperature by up to 8°C-verified in Diodes' thermal simulation models. Layout must assume worst-case mutual heating, not independent derating.
DMP3056LSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 722pF @ 25V
- Power - Max:
- 2.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMP3056LSDQ-13 FAQ
1.How can I place an order for DMP3056LSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP3056LSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP3056LSDQ-13 reliable?
The price and inventory of DMP3056LSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3056LSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMP3056LSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3056LSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP3056LSDQ-13?
DMP3056LSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP3056LSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP3056LSDQ-13?
For technical support, including DMP3056LSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3056LSDQ-13 requirements.
6.How does Aetrix verify that DMP3056LSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMP3056LSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3056LSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMP3056LSDQ-13?
All DMP3056LSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3056LSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP3056LSDQ-13 part is unused and in its original packaging.
Return procedure for DMP3056LSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP3056LSDQ-13 Tags

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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

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2N7002DW-7-F
Diodes Incorporated

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2N7002DWH6327XTSA1
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2N7002BKS,115
Nexperia USA Inc.

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