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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP3056LVT-13

Name: DMP3056LVT-13
Brand: Diodes Incorporated
SKU: DMP3056LVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP3056LVT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: -

Datasheet:: DMP3056LVT-13.pdf

Description:: MOSFET P-CH 30V 4.3A TSOT-26

Quantity:: RFQ Add To RFQ list

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Inventory:9,462

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Product details

Overview

DMP3056LVT-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SOT23 package, with R_DS(ON) = 50 mΩ @ V_GS = −10 V, I_D = −4.3 A, and V_GS(TH) = −1 to −2.1 V. It serves as a low-side load switch or reverse-polarity protection device in compact DC/DC converters, USB power switches, and battery-powered IoT sensor nodes.

For engineers reviewing the DMP3056LVT-13 datasheet, DMP3056LVT-13 pinout, DMP3056LVT-13 application, or DMP3056LVT-13 equivalent, key selection criteria include gate threshold voltage compatibility with 3.3V/5V logic, thermal resistance (R_θJA = 91 °C/W), and pulsed current capability (I_DM = −20 A) for surge-tolerant power control.

Technical Context

This MOSFET uses planar trench-gate technology optimized for low R_DS(ON) while maintaining fast switching (t_r = 4.7 ns, t_f = 18.2 ns) and low gate charge (Q_G = 5.8 nC @ V_GS = −4.5 V). Its −30 V V_DSS rating supports 24V rail protection and 12V automotive subsystems.

The device integrates an intrinsic body diode with V_SD = −1.2 V @ I_S = −1.7 A and exhibits normalized R_DS(ON) drift of ≤1.1× from −55 °C to +150 °C, enabling stable operation across industrial temperature ranges without derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V: Supports 24V nominal systems with 25% headroom for transients.
R_DS(ON)	50 mΩ @ V_GS = −10 V: Enables <100 mW conduction loss at 4.3 A continuous load.
I_D (max)	−4.3 A @ T_A = +25 °C: Sustains full-rated current on standard FR-4 PCB with thermal vias.
V_GS(TH)	−1 to −2.1 V: Fully enhanced by 3.3V logic-level gate drive; compatible with microcontroller GPIO.
Q_G	5.8 nC @ V_GS = −4.5 V: Allows efficient 1 MHz switching with <1 W gate driver power at 5V.
R_θJA	91 °C/W: Limits junction rise to ~126 °C at 1.38 W dissipation on 1-inch² 2 oz copper board.
C_iss	642 pF @ V_DS = −25 V: Minimizes Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

Package: SOT23 (Standard), surface-mount, 3-terminal plastic case per JEDEC TO-236AB; moisture sensitivity level 1 (J-STD-020); weight ≈ 0.009 g.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to higher potential (e.g., V_IN) in high-side switch; tied to ground in low-side configuration.
2 (Gate)	Control electrode for channel modulation	Requires negative bias relative to source; driven directly by 3.3V/5V logic with no level shifter.
3 (Drain)	Main current output terminal	Connects to load; body diode anode faces drain-enables reverse-current blocking when source > drain.

Key Features

Feature	Design Value
Low R_DS(ON)	50 mΩ @ −10 V enables <0.1 W conduction loss at 4.3 A, reducing thermal footprint in space-constrained designs.
Logic-level gate drive	V_GS(TH) max −2.1 V ensures full enhancement with 3.3 V MCU outputs, eliminating need for gate drivers.
Fast switching	4.7 ns rise time and 18.2 ns fall time support >500 kHz PWM in synchronous buck controllers.
Low gate charge	5.8 nC total gate charge reduces driver power consumption and EMI during transitions.
RoHS 3 & Halogen-free	Complies with EU Directive 2015/863/EU and Diodes' "Green" definition (<900 ppm Br+Cl, <1000 ppm Sb).

Applications

USB Power Switching

Reverse-Polarity Protection

Use Scenario: Selective enable/disable of 5V USB VBUS to peripheral modules in portable medical devices.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path; operates in static ON/OFF mode with <1 µA leakage.

Use Value: Prevents backfeed into host controller during hot-plug events; R_DS(ON) < 50 mΩ limits voltage drop to <215 mV at 4.3 A.

Use Scenario: Input protection for 12V battery-powered telemetry units exposed to field wiring errors.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery and system input; blocks reverse current when polarity inverted.

Use Value: Eliminates need for series Schottky diode; achieves <0.1 V forward drop vs. 0.3–0.4 V typical for discrete diodes.

DC/DC Converter Synchronous Rectifier

IoT Sensor Node Power Gating

Use Scenario: Secondary-side rectification in 30V-input isolated flyback converters for industrial sensors.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing output diode; driven by transformer-coupled gate signal referenced to secondary ground.

Use Value: Reduces conduction loss by 60% vs. 40V Schottky; C_oss = 65 pF minimizes ringing during turn-off.

Use Scenario: Power gating of BLE radio and environmental sensors in battery-operated smart meters.

IC Role / Device Role / Timing Role: Low-quiescent-load switch isolating subsystems during deep sleep (I_DDQ < 1 µA).

Use Value: Extends 2000 mAh Li-ion battery life by >12 months in 1% duty-cycle monitoring applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG3415L-7	R_DS(ON) = 42 mΩ @ −4.5 V; slightly lower threshold (−0.5 to −1.3 V); same SOT23 package.	Better suited for 3.3V-only gate drive; marginally higher leakage (I_DSS = −2 µA vs. −1 µA).	Select when driving from 3.3V logic without margin; verify gate drive slew rate due to higher C_iss (720 pF).
SI2301DDS-T1-GE3	R_DS(ON) = 115 mΩ @ −4.5 V; higher V_GS(TH) (−0.4 to −1.2 V); same footprint but lower current rating (−2.7 A).	Cost-optimized for low-power always-on circuits; not suitable for >3 A loads.	Choose only for sub-2 A applications where cost outweighs efficiency; avoid in thermally constrained layouts.

Compared with DMG3415L-7 and SI2301DDS-T1-GE3, DMP3056LVT-13 delivers optimal balance of low R_DS(ON), robust 4.3 A rating, and wide V_GS(TH) tolerance-making it preferred for mixed-voltage systems requiring reliable 3.3V/5V compatibility and thermal headroom.

Availability

DMP3056LVT-13 is available at Aetrix Electronics and suitable for USB power management, reverse-polarity protection, and DC/DC converter synchronous rectification requiring stable component supply and long-term industrial lifecycle support.

Supply support for DMP3056LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and internal fabs.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power-switching applications in consumer, industrial, and automotive subsystems.

FAQ

Is DMP3056LVT-13 suitable for automotive applications?

No-DMP3056LVT-13 is not AEC-Q101 qualified. While it operates across −55 °C to +150 °C, Diodes specifies automotive-grade versions (e.g., DMP3056LQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended reliability testing. Use only the Q-suffix variants for automotive ECUs or ADAS modules.

What is the maximum safe operating frequency in PWM applications?

Based on measured t_r = 4.7 ns and t_f = 18.2 ns, the device supports clean switching up to 2 MHz in low-duty-cycle applications. For continuous 50% duty cycle, thermal limits constrain practical use to ≤1 MHz on standard FR-4 with 2 oz copper and thermal vias-verified via SOA curve (Figure 12) at T_J ≤ 150 °C.

Does the body diode support bidirectional current flow?

No-the integrated body diode conducts only from source to drain (anode at source, cathode at drain). In normal P-channel operation, it blocks reverse current when V_S < V_D. It is not rated for sustained bidirectional conduction; external diodes or dual-MOSFET configurations are required for true H-bridge or regenerative braking.

Can DMP3056LVT-13 replace an N-channel MOSFET in high-side switching?

No-it cannot directly replace an N-channel device in high-side configurations without gate voltage boosting. As a P-channel MOSFET, it requires gate voltage ≤ source voltage to turn on. For high-side switching with ground-referenced control, use a dedicated high-side driver IC or charge pump; do not assume logic-level compatibility without verifying V_GS swing relative to source potential.

DMP3056LVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 642 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.38W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

DMP3056LVT-13 FAQ

1.How can I place an order for DMP3056LVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3056LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3056LVT-13 reliable?

The price and inventory of DMP3056LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3056LVT-13 is usually 5 days.

3.What payment methods are accepted for DMP3056LVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3056LVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3056LVT-13?

DMP3056LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3056LVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3056LVT-13?

For technical support, including DMP3056LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3056LVT-13 requirements.

6.How does Aetrix verify that DMP3056LVT-13 is sourced from the original manufacturer or authorized distributors?

All DMP3056LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3056LVT-13 meets industry standards.

7.What is the process for return or replacement of DMP3056LVT-13?

All DMP3056LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3056LVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3056LVT-13 part is unused and in its original packaging.

Return procedure for DMP3056LVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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