Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP3056LVT-7

Name: DMP3056LVT-7
Brand: Diodes Incorporated
SKU: DMP3056LVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMP3056LVT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: -

Datasheet:: DMP3056LVT-7.pdf

Description:: MOSFET P-CH 30V 4.3A TSOT-26

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,735

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMP3056LVT-7 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SOT23 package, delivering 50 mΩ R_DS(ON) at V_GS = −10 V and −4.3 A continuous drain current at T_A = +25°C. It serves as a low-side load switch or reverse-polarity protection device in compact DC/DC converters, USB power switches, and battery-powered systems.

For engineers reviewing the DMP3056LVT-7 datasheet, DMP3056LVT-7 pinout, DMP3056LVT-7 application, or DMP3056LVT-7 equivalent, key selection criteria include gate threshold voltage (−1 to −2.1 V), low input capacitance (642 pF), fast switching (t_R = 4.7 ns), thermal resistance (91 °C/W), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while maintaining robust body diode performance (V_SD = −1.2 V at I_S = −1.7 A). Its −1 V minimum gate threshold enables reliable turn-on with 3.3 V logic-level drive.

Dynamic parameters are characterized at V_DS = −15 V and I_D = −6 A: total gate charge is 5.8 nC (V_GS = −4.5 V) and 11.8 nC (V_GS = −10 V), supporting high-frequency PWM control up to several hundred kHz in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - Withstands reverse-biased drain-source voltage up to rated breakdown without conduction.
R_DS(ON)	50 mΩ @ V_GS = −10 V - Enables ≤215 mW conduction loss at −4.3 A, critical for thermally constrained PCB layouts.
I_D (continuous)	−4.3 A @ T_A = +25°C - Supports sustained load currents in portable power rails and hot-swap circuits.
V_GS(TH)	−1 to −2.1 V - Ensures full enhancement with standard 3.3 V microcontroller GPIOs without level-shifting.
C_iss	642 pF - Limits gate drive power requirement and enables efficient 1–2 MHz switching in compact SMPS designs.
t_R/t_F	4.7 ns / 18.2 ns - Reduces switching transition losses and EMI generation in high-speed load switching.
P_D	1.38 W - Defines maximum steady-state power dissipation on FR-4 with thermal vias; derates linearly above +25°C ambient.

Pinout & Package

Package: SOT23 (Standard), surface-mount plastic case per JEDEC TO-236AB, 0.009 g mass, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to higher potential rail (e.g., battery +); defines reference for gate drive and body diode anode.
2 (Gate)	Control electrode for channel formation	Receives negative V_GS relative to source; low 15 Ω gate resistance supports fast edge rates with minimal ringing.
3 (Drain)	Current output terminal	Connected to load; body diode cathode faces drain-enables reverse-current blocking in polarity protection.

Key Features

Feature	Design Value
Low R_DS(ON) at −4.5 V	70 mΩ - Allows direct interface with 4.5 V logic or PMIC outputs without gate boosting.
Low gate threshold spread	V_GS(TH) min/max = −1 V / −2.1 V - Ensures consistent turn-on across temperature (−55°C to +150°C) and unit-to-unit variation.
Fast switching with low Q_G	Q_G = 5.8 nC @ −4.5 V - Reduces gate driver power consumption and propagation delay in high-frequency control loops.
Halogen- and antimony-free "Green" construction	<900 ppm Br/Cl, <1000 ppm Sb - Meets automotive and industrial environmental compliance mandates without performance trade-offs.

Applications

Battery-Powered Load Switching

USB Port Power Control

Use Scenario: Enabling/disabling power to peripherals in handheld medical devices or IoT sensors using a 3.3 V MCU GPIO.

IC Role / Device Role / Timing Role: Low-side P-channel switch controlling V_BAT delivery; operates in static on/off states with <1 µA leakage (I_DSS).

Use Value: Eliminates need for external level shifters or dual-supply drivers, reducing BOM count and PCB area by >30% versus N-channel alternatives.

Use Scenario: Providing overcurrent and reverse-polarity protection on USB Type-A downstream ports in docking stations.

IC Role / Device Role / Timing Role: Reverse-voltage blocking element placed between upstream VBUS and downstream load; body diode blocks reverse current during plug insertion.

Use Value: Achieves <1.2 V forward drop (V_SD) at 1.7 A, minimizing voltage loss while meeting USB 2.0 VBUS tolerance (4.75–5.25 V).

DC/DC Converter Synchronous Rectification

Industrial Sensor Signal Conditioning

Use Scenario: Replacing Schottky diodes in 12 V input → 3.3 V output buck converters for factory automation controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; driven by complementary PWM signal referenced to source node.

Use Value: Cuts conduction loss by 65% versus 40 V/3 A Schottky (e.g., SB340), improving efficiency from 86% to 91% at 2 A load.

Use Scenario: Isolating analog sensor supply domains in 4–20 mA loop-powered transmitters exposed to −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Precision power gating element with stable R_DS(ON) (±15% over temperature) and negligible gate leakage (<100 nA).

Use Value: Maintains sensor bias stability across full operating range; eliminates cold-junction drift errors induced by leakage-driven voltage shifts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG3415L-7	R_DS(ON) = 42 mΩ @ −4.5 V (lower), V_GS(TH) = −0.5 to −1.2 V (lower threshold), C_iss = 720 pF (higher)	Better suited for 1.8–2.5 V logic drive; less margin for noise immunity in noisy industrial environments	Select when driving from ultra-low-voltage MCUs but verify gate drive rise time meets t_D(ON) < 5 ns requirement.
SI2301DDS-T1-GE3	R_DS(ON) = 115 mΩ @ −4.5 V (higher), V_GS(TH) = −0.4 to −1.0 V (lower), PD = 0.71 W (lower)	Lower power handling limits use to sub-1 A loads; unsuitable for 4.3 A continuous operation	Acceptable only for space-constrained, low-current bias rails where thermal budget permits 115 mΩ loss.

Compared with DMG3415L-7 and SI2301DDS-T1-GE3, DMP3056LVT-7 offers balanced R_DS(ON), gate threshold, and thermal capability-making it optimal for 3–5 A industrial load switching where 3.3 V drive reliability and 1.38 W dissipation headroom are required.

Availability

DMP3056LVT-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery accessories, and industrial PLC I/O modules requiring stable component supply and long-term manufacturing continuity.

Supply support for DMP3056LVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMP3056LVT-7 belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for space-constrained, high-reliability DC power control in consumer, industrial, and computing applications.

FAQ

What is the maximum safe operating junction temperature for DMP3056LVT-7?

The absolute maximum junction temperature is +150°C, verified per the datasheet's Safe Operating Area (SOA) curve and thermal resistance specification (R_θJA = 91°C/W). Operation beyond this limit risks irreversible parametric shift or bond-wire failure. Derating is required above +25°C ambient-e.g., at +70°C ambient, max continuous I_D drops to −3.4 A.

Does DMP3056LVT-7 support logic-level gate drive from a 3.3 V microcontroller?

Yes-its gate threshold voltage range (−1 V to −2.1 V) ensures full enhancement with 3.3 V logic: applying V_GS = −3.3 V achieves R_DS(ON) ≤ 50 mΩ and guarantees robust noise immunity (>1.2 V margin below V_GS(TH) max). No level shifter is needed.

Can DMP3056LVT-7 be used for reverse-polarity protection in automotive 12 V systems?

No-it is rated for −30 V V_DSS, insufficient for automotive load-dump transients (up to −60 V). While functional in nominal 12 V reverse-battery scenarios, it lacks AEC-Q101 qualification and fails transient voltage immunity requirements per ISO 7637-2. Use AEC-Q101-qualified parts like DMN3028LFD-7 instead.

How does the body diode performance impact its use in synchronous rectification?

The body diode has V_SD = −1.2 V at −1.7 A and exhibits soft recovery characteristics, minimizing voltage spikes during forced commutation. However, its forward drop exceeds discrete Schottky diodes-so synchronous rectification only improves efficiency when gate drive timing precisely avoids body diode conduction (dead-time optimization required).

DMP3056LVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 642 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.38W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

DMP3056LVT-7 FAQ

1.How can I place an order for DMP3056LVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP3056LVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP3056LVT-7 reliable?

The price and inventory of DMP3056LVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3056LVT-7 is usually 5 days.

3.What payment methods are accepted for DMP3056LVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3056LVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP3056LVT-7?

DMP3056LVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP3056LVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP3056LVT-7?

For technical support, including DMP3056LVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3056LVT-7 requirements.

6.How does Aetrix verify that DMP3056LVT-7 is sourced from the original manufacturer or authorized distributors?

All DMP3056LVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3056LVT-7 meets industry standards.

7.What is the process for return or replacement of DMP3056LVT-7?

All DMP3056LVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3056LVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP3056LVT-7 part is unused and in its original packaging.

Return procedure for DMP3056LVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…