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Diodes Incorporated DMP3065LVT-13
- Part No.:
- DMP3065LVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP3065LVT-13.pdf
- Description:
- MOSFET P-CH 30V 5.1A TSOT-26
- Quantity:
- Payment:
- Shipping:
Inventory:7,607
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Product details
Overview
DMP3065LVT-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSOT26 package, rated for -30V V(BR)DSS, 42mΩ RDS(ON) @ VGS = -10V, and -5.1A continuous drain current at TA = +25°C. It serves as a high-efficiency power switch in low-voltage DC-DC converters and LED backlighting circuits where compact size and low conduction loss are critical.
For engineers reviewing the DMP3065LVT-13 datasheet, DMP3065LVT-13 pinout, DMP3065LVT-13 application, or DMP3065LVT-13 equivalent, key selection criteria include verified gate threshold voltage (-1.7V typ), body diode forward voltage (-0.75V typ @ -1A), thermal resistance (78°C/W with recommended layout), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET operates in enhancement mode with a negative gate-source voltage control, requiring VGS ≤ -1.7V to fully turn on. Its low RDS(ON) and fast switching (tD(on) = 5.7ns, tD(off) = 21.8ns) enable high-frequency synchronous buck topologies and load-switching applications up to 1MHz.
The device integrates ESD protection on the gate terminal and features a thermally optimized TSOT26 package with matte tin–annealed copper leadframe. Its junction-to-ambient thermal resistance varies between 78°C/W (minimum pad layout) and 102°C/W (standard FR-4), directly impacting maximum sustainable power dissipation (1.2W–1.6W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30V - Maximum reverse drain-source voltage before avalanche breakdown; defines safe operating range in 24V rail applications. |
| RDS(ON) | 42mΩ @ VGS = -10V - Confirmed on-resistance at full enhancement; enables <0.22W conduction loss at -5.1A. |
| ID max | -5.1A @ TA = +25°C - Continuous drain current rating under standard PCB layout; derates to -3.2A at +70°C ambient. |
| Qg | 12.3nC @ VGS = -10V - Total gate charge determines drive strength requirement; supports efficient 1MHz PWM switching with low gate driver current. |
| RθJA | 78°C/W - Thermal resistance with minimum recommended pad layout; sets junction temperature rise of 95°C at 1.2W dissipation. |
| VGS(th) | -1.7V typ - Gate threshold voltage ensures reliable turn-on with standard -3.3V or -5V logic-level control signals. |
| Ciss | 587pF typ - Input capacitance affects gate drive loop stability and switching transition time in high-speed designs. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin small outline transistor package with exposed drain pad for thermal enhancement; dimensions: 2.90mm × 2.80mm × 1.00mm (L × W × H); moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main current return path; tied to system ground or high-side reference in high-side switch configurations. |
| 2 (G) | Gate | Control input; requires negative voltage relative to source to turn on; ESD-protected per HBM 2kV. |
| 3 (D) | Drain | Power output node; connected to load or inductor; electrically tied to exposed pad for thermal conduction. |
| 4 (D) | Drain | Second drain connection; paralleled with Pin 3 to reduce package inductance and improve thermal spreading. |
| 5 (D) | Drain | Third drain connection; part of 3-pin parallel drain structure enhancing current handling and heat dissipation. |
| 6 (S) | Source | Secondary source terminal; provides low-inductance return path and improves layout symmetry in high-frequency layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 42mΩ @ -10V enables <0.22W conduction loss at full rated current, reducing thermal stress in space-constrained power stages. |
| Fast switching speed | Turn-off delay of 21.8ns and fall time of 23.9ns support high-frequency operation (>500kHz) with minimal switching loss. |
| ESD-protected gate | HBM-rated ≥2kV allows robust handling during assembly and eliminates need for external gate protection in most board-level environments. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and high-temperature operating life testing. |
| Green packaging | Halogen- and antimony-free molding compound (Br+Cl <1500ppm, Sb <1000ppm) meets global environmental compliance requirements. |
Applications
| LED Backlight Control | USB-C Load Switch |
|---|---|
|
Use Scenario: Driving white LED strings in automotive instrument clusters with dimming via PWM at 1–5kHz. IC Role / Device Role / Timing Role: High-side P-channel switch controlling current path to LED anodes; synchronizes with PWM controller timing. Use Value: 42mΩ RDS(ON) limits voltage drop to <210mV at 5A, preserving headroom for 24V supply while maintaining >98% efficiency. |
Use Scenario: Enabling/disabling 5V/3A USB-C power delivery paths in portable medical monitors. IC Role / Device Role / Timing Role: Low-impedance load switch isolating downstream circuitry; responds to enable signal within 100ns. Use Value: -1.7V VGS(th) ensures clean turn-on with 3.3V GPIO; body diode blocks reverse current during hot-plug events. |
| Automotive Body Control Module | Synchronous Buck Converter High-Side Switch |
|
Use Scenario: Controlling 12V solenoid valves in HVAC actuators with pulse-width modulated drive. IC Role / Device Role / Timing Role: Power switch interfacing with microcontroller GPIO; handles inductive kickback via integrated body diode. Use Value: AEC-Q101 qualification guarantees operation across -40°C to +125°C ambient; 65mΩ @ -4.5V supports 3.3V logic drive. |
Use Scenario: High-side switch in 12V-to-3.3V synchronous buck converter powering FPGA I/O banks. IC Role / Device Role / Timing Role: Main power FET in buck topology; commutates with complementary N-channel low-side FET. Use Value: 587pF Ciss and 12.3nC Qg minimize gate drive losses at 1MHz switching frequency, improving overall converter efficiency by ~1.2%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(ON) = 45mΩ @ -4.5V (vs. 65mΩ for DMP3065LVT); higher Qg (14nC vs. 10nC @ -4.5V) | Better suited for 3.3V logic-driven loads needing lower gate charge at mid-VGS; slightly higher conduction loss at -4.5V | Select when prioritizing gate drive simplicity over absolute RDS(ON) at low VGS. |
| SI3457DV-T1-GE3 | RDS(ON) = 50mΩ @ -4.5V; lower ID rating (-3.8A vs. -4.0A); no AEC-Q101 qualification | Limited to commercial-temperature industrial use; lacks automotive reliability validation and thermal performance margin | Choose only for cost-sensitive non-automotive applications where AEC-Q101 is not required. |
Compared with DMG3415L-7 and SI3457DV-T1-GE3, the DMP3065LVT-13 delivers superior thermal performance (78°C/W vs. ≥90°C/W), AEC-Q101 compliance, and tighter VGS(th) distribution (-1.0V to -2.1V), making it preferred for automotive and high-reliability industrial power switches.
Availability
DMP3065LVT-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C load switching, and LED backlighting applications requiring stable component supply and long-term lifecycle continuity.
Supply support for DMP3065LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions.
The DMP3065LVT belongs to Diodes' automotive-qualified P-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained power switching in 12V/24V automotive and industrial systems.
FAQ
What is the maximum continuous drain current for DMP3065LVT-13 at +70°C ambient?
The maximum continuous drain current is -4.2A at VGS = -10V and TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOT26 package under standard PCB conditions; actual current capability may increase with enhanced copper pour or forced airflow.
Is DMP3065LVT-13 suitable for high-side switching with 3.3V GPIO control?
Yes - its typical gate threshold voltage of -1.7V and maximum of -2.1V ensures reliable turn-on with 3.3V logic referenced to source. At VGS = -3.3V, RDS(ON) is approximately 85mΩ (extrapolated from datasheet curves), supporting moderate-current loads up to ~2.5A with acceptable loss.
Does DMP3065LVT-13 include an integrated body diode, and what is its forward voltage?
Yes - it features a monolithic body diode with typical forward voltage of -0.75V at -1A and 25°C, rising to -1.2V at -1A and 150°C. This diode enables freewheeling in inductive loads and reverse-current blocking in load-switch configurations without external components.
What is the recommended PCB pad layout for optimal thermal performance?
Diodes recommends using the AP02001-compliant layout: a 3.5mm × 3.5mm exposed copper pad connected to internal ground planes via ≥4 thermal vias (0.3mm diameter). This achieves the 78°C/W RθJA rating; omitting vias or reducing pad area increases thermal resistance to 102°C/W or higher.
DMP3065LVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 880 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP3065LVT-13 FAQ
1.How can I place an order for DMP3065LVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP3065LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP3065LVT-13 reliable?
The price and inventory of DMP3065LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3065LVT-13 is usually 5 days.
3.What payment methods are accepted for DMP3065LVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3065LVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP3065LVT-13?
DMP3065LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP3065LVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP3065LVT-13?
For technical support, including DMP3065LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3065LVT-13 requirements.
6.How does Aetrix verify that DMP3065LVT-13 is sourced from the original manufacturer or authorized distributors?
All DMP3065LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3065LVT-13 meets industry standards.
7.What is the process for return or replacement of DMP3065LVT-13?
All DMP3065LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3065LVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP3065LVT-13 part is unused and in its original packaging.
Return procedure for DMP3065LVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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