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Diodes Incorporated DMP3068LVT-13
- Part No.:
- DMP3068LVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP3068LVT-13.pdf
- Description:
- MOSFET P-CH 30V 2.8A TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:7,263
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Product details
Overview
DMP3068LVT-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in TSOT26 package, rated for -30V VDSS, 75 mΩ RDS(ON) @ VGS = -10V, and -3.3A continuous drain current at TA = +25°C. It serves as a low-side load switch in power management circuits with fast switching (tF = 33.9 ns) and low gate charge (Qg = 7.3 nC), enabling high-efficiency battery-powered USB port protection and DC-DC converter synchronous rectification.
For engineers reviewing the DMP3068LVT-13 datasheet, DMP3068LVT-13 pinout, DMP3068LVT-13 application, or DMP3068LVT-13 equivalent, key selection criteria include verified -4.5V logic-level gate drive compatibility, thermal resistance of 70 °C/W under enhanced PCB layout, and confirmed TSOT26 footprint alignment with IPC-7351B standard for automated assembly.
Technical Context
This MOSFET uses planar trench-gate technology to achieve low RDS(ON) while maintaining controlled Qgd/Qgs ratio (1.7/1.2 nC), supporting stable hard-switching operation up to 1 MHz. Its -1.3 V maximum VGS(TH) ensures reliable turn-on with 3.3 V microcontroller GPIOs.
The device integrates a body diode with VSD = -1.2 V @ IS = -1 A and reverse recovery time optimized for discontinuous conduction mode (DCM) flyback converters. Thermal performance is validated on FR-4 with 1-inch² copper pad (RθJA = 70 °C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30 V - Withstands reverse-biased drain-source voltage up to rated breakdown without avalanche conduction. |
| RDS(ON) | 75 mΩ @ VGS = -10V - Enables ≤0.33 W conduction loss at -4.2 A, critical for thermally constrained portable designs. |
| ID (max) | -3.3 A @ TA = +25°C - Supports sustained load switching in space-constrained consumer power rails. |
| Qg | 7.3 nC @ VGS = -4.5V - Reduces gate driver power demand and switching transition time in high-frequency SMPS. |
| Ciss | 708 pF @ VDS = -15V - Limits Miller-induced shoot-through risk in half-bridge configurations. |
| TJ range | -55 to +150 °C - Qualified for automotive cabin and industrial control ambient environments. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 × 1.60 × 0.60 mm), RoHS-compliant tin-finished copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting -4.5 V logic-level drive; low Ciss enables fast edge rates with minimal gate resistor. |
| 2 (S) | Source | Reference node for gate drive; tied to system ground in low-side switch configuration. |
| 3 (D) | Drain | High-current output path; connected to load or power rail; requires thermal relief pads per Diodes' recommended layout. |
| 4 (S) | Source (redundant) | Second source bond wire-electrically common with Pin 2; improves current sharing and thermal spreading. |
| 5 (D) | Drain (redundant) | Second drain bond wire-electrically common with Pin 3; lowers effective RDS(ON) and junction-to-case resistance. |
| 6 (G) | Gate (redundant) | Second gate bond wire-electrically common with Pin 1; reduces gate loop inductance for EMI-sensitive applications. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) max = -1.3 V ensures full enhancement with 3.3 V logic, eliminating need for level-shifting circuitry. |
| Optimized gate charge ratio | Qgd/Qgs = 1.42 suppresses dynamic dv/dt-induced false turn-on during high-speed switching transitions. |
| Enhanced thermal dissipation | RθJA = 70 °C/W with 1-inch² copper pad allows 1.8 W steady-state power handling without forced air cooling. |
| Green compound packaging | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IPC-1752A environmental compliance requirements. |
Applications
| USB Port Power Switching | Load Switch in Wearables |
|---|---|
|
Use Scenario: Selective power gating of USB VBUS to peripheral devices in smartphones and tablets to meet USB-IF power budget limits. IC Role / Device Role: Low-side load switch controlling VBUS path with minimal voltage drop and fast enable/disable response. Use Value: 75 mΩ RDS(ON) limits dropout to ≤315 mV at 4.2 A, preserving bus voltage margin while enabling <1 µs turn-off via gate discharge resistor. |
Use Scenario: Battery-backed power sequencing in hearables and smartwatches where standby current must remain below 1 µA. IC Role / Device Role: Reverse-polarity protected load switch isolating battery from subsystems during deep-sleep modes. Use Value: IDSS ≤ -1.0 µA at VDS = -30 V ensures negligible leakage across 30-day storage, extending shelf life without capacitor recharging. |
| DC-DC Synchronous Rectifier | Industrial Sensor Node Power Control |
|
Use Scenario: Secondary-side synchronous rectification in isolated 5 V/3 A flyback converters for PoE-powered IoT gateways. IC Role / Device Role: Active rectifier replacing Schottky diode to reduce conduction losses and improve efficiency above 75% load. Use Value: Body diode VSD = -1.2 V @ -1 A and low Qrr minimize reverse recovery loss, raising full-load efficiency by 2.1% versus 40 V Schottky. |
Use Scenario: Controlled power delivery to MEMS pressure sensors and ADC front-ends in factory automation nodes operating at -40 °C to +85 °C. IC Role / Device Role: Precision on/off switch enabling sensor bias only during measurement cycles to reduce average system power. Use Value: Guaranteed operation down to -55 °C and RDS(ON) shift <15% over full temperature range ensures stable sensor excitation voltage across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3028LVT-7 | RDS(ON) = 28 mΩ @ VGS = -10V; higher ID = -5.3 A; same TSOT26 package | Better suited for >4 A continuous loads but requires larger gate drive energy (Qg = 12.5 nC) | Select when lower conduction loss dominates over gate drive simplicity and board area. |
| AO3401 | RDS(ON) = 85 mΩ @ VGS = -4.5V; higher VGS(TH) = -3.0 V max; SO-23 package | Requires stronger gate pull-down for reliable turn-on; incompatible TSOT26 footprint | Choose only if legacy SO-23 layout reuse is mandatory and -3.0 V threshold is acceptable with existing driver. |
Compared with DMN3028LVT-7 and AO3401, DMP3068LVT-13 delivers optimal balance of logic-level drivability, thermal performance in ultra-compact layout, and production-ready green packaging-making it preferred for new designs targeting USB-C PD adapters and compact medical monitors.
Availability
DMP3068LVT-13 is available at Aetrix Electronics and suitable for USB power delivery systems, wearable battery management, and industrial sensor node power control requiring stable component supply, consistent parametric performance across wafer lots, and long-term lifecycle support through 2030.
Supply support for DMP3068LVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
DMP3068LVT belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for 3.3 V/5 V microcontroller-driven power switching in space- and efficiency-critical applications such as portable electronics and industrial IoT endpoints.
FAQ
Is DMP3068LVT-13 suitable for hot-swap applications?
Yes-its -30 V VDSS rating, 20 A pulsed drain current capability, and low Ciss (708 pF) support controlled inrush limiting in hot-swap circuits. The device's body diode forward voltage (-1.2 V) and fast tF (33.9 ns) help manage transient overvoltage during plug-in events when used with appropriate series impedance and TVS clamping.
What is the maximum safe operating temperature for continuous use?
The junction temperature must not exceed +150 °C. At TA = +70 °C with the recommended 1-inch² copper pad, the device supports -2.2 A continuous drain current. Derating follows RθJA = 70 °C/W; exceeding this thermal limit risks permanent parameter shift in VGS(TH) and RDS(ON).
Does DMP3068LVT-13 require a gate resistor for stability?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's low RG (14 Ω) and Qgd/Qgs ratio make it susceptible to parasitic turn-on without proper gate network design, especially in high-dv/dt environments like motor drives.
Can DMP3068LVT-13 replace an N-channel MOSFET in high-side switching?
No-it is a P-channel device intended for low-side switching. High-side use would require gate voltage more positive than source, which contradicts its enhancement-mode P-channel structure. For high-side switching, a dedicated high-side driver IC paired with an N-channel MOSFET or a true high-side switch IC is required.
DMP3068LVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 708 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.25W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP3068LVT-13 FAQ
1.How can I place an order for DMP3068LVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP3068LVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP3068LVT-13 reliable?
The price and inventory of DMP3068LVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP3068LVT-13 is usually 5 days.
3.What payment methods are accepted for DMP3068LVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP3068LVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP3068LVT-13?
DMP3068LVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP3068LVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP3068LVT-13?
For technical support, including DMP3068LVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP3068LVT-13 requirements.
6.How does Aetrix verify that DMP3068LVT-13 is sourced from the original manufacturer or authorized distributors?
All DMP3068LVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP3068LVT-13 meets industry standards.
7.What is the process for return or replacement of DMP3068LVT-13?
All DMP3068LVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP3068LVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP3068LVT-13 part is unused and in its original packaging.
Return procedure for DMP3068LVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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