Diodes Incorporated DMP3085LSD-13

Overview

DMP3085LSD from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30V V_DSS, 70mΩ R_DS(ON) @ V_GS = -10V, and -3.9A continuous drain current at +25°C. It delivers low on-resistance and fast switching for high-efficiency DC-DC converters and backlight power stages.

For engineers reviewing the DMP3085LSD datasheet, DMP3085LSD pinout, DMP3085LSD application, or DMP3085LSD equivalent, key selection criteria include verified -30V breakdown voltage, gate threshold of -1 to -3V, thermal resistance of 75°C/W (with enhanced pad), body diode forward voltage of -0.7 to -1.2V, and total gate charge of 5.2nC @ -4.5V.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while maintaining robust switching performance. Its gate threshold range (-1 to -3V) ensures reliable turn-on with standard logic-level negative gate drive, and its 5.2nC total gate charge enables efficient operation in high-frequency synchronous buck topologies.

The device integrates a monolithic body diode with V_SD = -0.7 to -1.2V at -1A, supporting freewheeling in buck and load-switch configurations. Thermal design is supported by validated R_θJA values: 75°C/W (enhanced layout) and 107°C/W (standard FR-4), enabling predictable junction temperature estimation under pulsed and steady-state loads.

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain paddle (pins 1–4 and 5–8 arranged as dual-source/dual-gate/dual-drain configuration). Pin 1 = Source 1, Pin 2 = Gate 1, Pin 3 = Source 2, Pin 4 = Gate 2, Pin 5 = Drain 2, Pin 6 = Drain 1, Pin 7 = Drain 1, Pin 8 = Drain 2 - confirmed per datasheet top-view diagram and marking "P3085SD" orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMG3415L-7 and SI3457DV-T1-GE3, DMP3085LSD uniquely balances -30V ruggedness, 70mΩ R_DS(ON) at -10V, and 5.2nC gate charge-making it optimal for 24V-input DC-DC converters requiring both voltage margin and high-frequency efficiency.

Availability

DMP3085LSD is available at Aetrix Electronics and suitable for DC-DC converters, USB-C load switches, and industrial power sequencing applications requiring stable component supply and RoHS-compliant green packaging.

Supply support for DMP3085LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMP3085LSD belongs to Diodes' high-efficiency P-channel MOSFET product line, engineered specifically for space-constrained, high-frequency power conversion where low R_DS(ON) and fast switching must coexist with robust voltage rating and thermal performance.

FAQ

What is the maximum safe operating voltage for DMP3085LSD in continuous DC applications?

The absolute maximum drain-source voltage (V_DSS) is -30V, verified per datasheet Section "Maximum Ratings." Operation beyond this value risks avalanche breakdown and irreversible damage. For 24V systems, a 20% derating margin is recommended, limiting use to ≤24V nominal rails with transient clamping.

Can DMP3085LSD be used in parallel configurations, and what layout considerations apply?

Yes-the SO-8 package features four paralleled drain pins and two independent source/gate pairs, enabling symmetrical dual-channel paralleling. Critical layout requirements include matched gate trace lengths, Kelvin-connected source returns, and equal-area copper pours under all drain pads to ensure current sharing within ±10% at full load.

Does DMP3085LSD include an integrated body diode, and what are its conduction characteristics?

Yes-it contains a monolithic parasitic body diode with forward voltage V_SD = -0.7 to -1.2V at -1A and -25°C, per Electrical Characteristics table. This diode supports freewheeling in buck and flyback topologies but is not rated for continuous reverse recovery; external Schottky diodes are recommended for high-di/dt or high-frequency synchronous rectification.

What thermal performance can be expected on a standard 2oz FR-4 PCB with minimum pad layout?

With minimum recommended pad layout on 2oz FR-4, R_θJA is 107°C/W (steady state), meaning a 1W power dissipation raises junction temperature by 107°C above ambient. To maintain T_J ≤ 125°C at 25°C ambient, maximum continuous power must be limited to ≤0.93W-achievable at ≤3.1A with 70mΩ R_DS(ON).