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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP31D1U-13

Name: DMP31D1U-13
Brand: Diodes Incorporated
SKU: DMP31D1U-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP31D1U-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMP31D1U-13.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Inventory:6,559

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Product details

Overview

DMP31D1U-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SOT23 package, optimized for low-R_DS(ON) (1 Ω @ V_GS = −4.5 V) and fast switching in portable load-switch applications. It delivers −0.62 A continuous drain current at +25°C, features ESD-protected gate, and operates across −55°C to +150°C junction temperature range.

For engineers reviewing the DMP31D1U-13 datasheet, DMP31D1U-13 pinout, DMP31D1U-13 application, or DMP31D1U-13 equivalent, key selection criteria include gate threshold voltage (−0.5 to −1.1 V), R_DS(ON) vs. V_GS curves, thermal resistance (274 °C/W), body diode forward voltage (−0.8 to −1.2 V), and pulsed drain capability (−2 A).

Technical Context

This device uses a planar trench-gate structure to achieve low on-resistance while maintaining robust gate oxide integrity and fast turn-on/turn-off times (t_D(ON) = 3.8 ns, t_F = 20 ns). Its negative gate threshold enables direct logic-level control from 1.8–4.5 V microcontrollers without level-shifting.

The integrated body diode supports reverse-current paths in power-path management, with V_SD = −0.8 V at −300 mA and temperature-stable R_DS(ON) variation (±15% over −55°C to +125°C at V_GS = −4.5 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - Withstands up to 30 V reverse drain-source voltage before breakdown.
R_DS(ON)	1 Ω @ V_GS = −4.5 V - Enables <100 mW conduction loss at 0.4 A load current.
I_D (continuous)	−0.62 A @ T_A = +25°C - Supports compact battery-powered load switching without heatsinking.
V_GS(TH)	−0.5 to −1.1 V - Compatible with 1.8 V and 3.3 V GPIOs for direct drive.
Q_g	1.0 nC @ V_GS = −4.5 V - Minimizes gate drive power and enables high-frequency PWM control.
R_θJA	274 °C/W - Limits junction temperature rise to ~126°C under 460 mW steady-state dissipation on FR-4 board.
C_iss	54 pF - Reduces Miller effect and improves switching stability in low-noise power rails.

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.4 mm × 1.3 mm × 1.0 mm), RoHS-compliant, matte tin-plated leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel channel	Connected to higher potential rail (e.g., battery +); defines reference for gate control.
2 (Gate)	Control electrode for channel conduction	Accepts negative V_GS to turn on; ESD-protected with internal diode clamp.
3 (Drain)	Output current path to load	Connected to load side; carries full switched current and supports body diode conduction.

Key Features

Feature	Design Value
Low gate threshold voltage	−0.5 to −1.1 V enables direct interface with 1.8 V logic without external level shifters.
Fast switching speed	Turn-off fall time of 20 ns reduces transition losses in high-frequency load control.
ESD-protected gate	HBM rating ≥2 kV ensures robustness during PCB handling and assembly.
Thermally stable R_DS(ON)	Normalized on-resistance varies <±15% from −55°C to +125°C at fixed V_GS.

Applications

Smartphone Power Sequencing

USB-C Port Power Switching

Use Scenario: Controlled enable/disable of PMIC rails during boot-up and sleep transitions.

IC Role / Device Role / Timing Role: High-side load switch managing 3.3 V or 5 V system rails with precise timing via GPIO.

Use Value: Low R_DS(ON) minimizes voltage drop (<0.4 V at 0.4 A), preserving margin for downstream LDOs.

Use Scenario: Isolating VBUS path during cable insertion/removal and fault detection.

IC Role / Device Role / Timing Role: Bidirectional load switch supporting USB PD negotiation and overcurrent protection coordination.

Use Value: Fast turn-off (t_F = 20 ns) limits fault energy during short-circuit events.

Wireless Earbud Battery Management

IoT Sensor Node Power Gating

Use Scenario: Disabling charging circuitry and audio amplifiers during standby to reduce quiescent current.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch enabling sub-μA shutdown states.

Use Value: I_DSS ≤ −1 μA at −30 V ensures <10 nW standby power loss per switch.

Use Scenario: Cycling power to environmental sensors (e.g., humidity, temperature) to extend battery life.

IC Role / Device Role / Timing Role: Logic-controlled power gate synchronized with MCU wake/sleep cycles.

Use Value: Gate charge Q_g = 1.0 nC allows full switching with <1 μJ energy per cycle from 3.3 V GPIO.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305U-7	R_DS(ON) = 0.55 Ω @ −4.5 V; higher ID (−4.2 A); larger SOP-8 package	Requires PCB area for 5×6 mm package; suited for higher-current industrial loads	Select when >1 A continuous current or lower conduction loss is required; not pin-compatible.
AO3401	R_DS(ON) = 0.085 Ω @ −4.5 V; ID = −4.2 A; same SOT23 footprint but different pinout (G-D-S vs. S-G-D)	Pinout mismatch requires layout revision; higher current capability increases gate drive demand	Choose only if redesigning PCB; verify gate drive strength due to 2.7 nC Q_g.

Compared with DMG2305U-7 and AO3401, DMP31D1U-13 offers optimal balance of ultra-low gate drive requirement (1.0 nC), compact SOT23 size, and sufficient current rating for sub-1 A portable applications-making it ideal where board space and GPIO drive capability are constrained.

Availability

DMP31D1U-13 is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port power switching, and wireless earbud battery management requiring stable component supply and consistent SOT23 packaging.

Supply support for DMP31D1U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMP31D1U belongs to Diodes' low-voltage P-channel MOSFET product line, engineered specifically for space-constrained, battery-operated consumer electronics where low gate drive voltage, minimal conduction loss, and robust ESD performance are critical.

FAQ

What is the maximum safe operating voltage for DMP31D1U-13?

The absolute maximum drain-source voltage (V_DSS) is −30 V. Operation beyond this rating risks avalanche breakdown and permanent damage. Derating is recommended for reliability: sustained operation above −24 V requires thermal validation under worst-case ambient and power dissipation conditions.

Can DMP31D1U-13 be used in automotive applications?

No-DMP31D1U-13 is not AEC-Q101 qualified. Diodes offers automotive-grade equivalents (e.g., DMP3025LSE) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. This part is intended for commercial portable electronics only.

Does the body diode support reverse current flow in load-switch configurations?

Yes-the intrinsic body diode conducts from source to drain (anode at drain, cathode at source) when V_DS > 0. At −300 mA, V_SD is −0.8 to −1.2 V depending on temperature. This enables back-powering protection and bidirectional current paths in USB-C and battery backup circuits.

What is the recommended PCB pad layout for thermal performance?

Use the Diodes-recommended SOT23 pad layout: 2.0 mm × 0.8 mm solder pad for the drain tab, with 1.35 mm × 0.9 mm spacing between pins. Add thermal relief traces and avoid copper isolation around the drain pad to maximize heat transfer to the board's inner layers.

DMP31D1U-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 620mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.6 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 54 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 460mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMP31D1U-13 FAQ

1.How can I place an order for DMP31D1U-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP31D1U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP31D1U-13 reliable?

The price and inventory of DMP31D1U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP31D1U-13 is usually 5 days.

3.What payment methods are accepted for DMP31D1U-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP31D1U-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP31D1U-13?

DMP31D1U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP31D1U-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP31D1U-13?

For technical support, including DMP31D1U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP31D1U-13 requirements.

6.How does Aetrix verify that DMP31D1U-13 is sourced from the original manufacturer or authorized distributors?

All DMP31D1U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP31D1U-13 meets industry standards.

7.What is the process for return or replacement of DMP31D1U-13?

All DMP31D1U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP31D1U-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP31D1U-13 part is unused and in its original packaging.

Return procedure for DMP31D1U-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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