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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP31D1UFB4-7B

Name: DMP31D1UFB4-7B
Brand: Diodes Incorporated
SKU: DMP31D1UFB4-7B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP31D1UFB4-7B

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: DMP31D1UFB4-7B.pdf

Description:: MOSFET BVDSS: 8V~24V X2-DFN1006-

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Product details

Overview

DMP31D1UFB4-7B from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in X2-DFN1006-3 package, designed for low-voltage load switching in space-constrained portable electronics. It delivers R_DS(ON) = 0.6Ω (typ) at V_GS = −4.5V, supports −0.9A continuous drain current at +25°C, and features ESD-protected gate with −1.1V max V_GS(TH).

For engineers reviewing the DMP31D1UFB4-7B datasheet, DMP31D1UFB4-7B pinout, DMP31D1UFB4-7B application, or DMP31D1UFB4-7B equivalent, key selection criteria include ultra-small footprint (0.6 mm²), low gate threshold for 1.8V–2.5V logic compatibility, thermal resistance of 103°C/W on optimized PCB, and body diode forward voltage of −0.8V at −300mA.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining fast switching (t_r = 11 ns, t_f = 20 ns) and low gate charge (Q_g = 1.0 nC @ −4.5V). Its −30V V_DSS rating and ±8V V_GSS support robust operation in battery-powered systems with transient overvoltage exposure.

The device integrates an ESD protection diode across gate-source terminals and uses NiPdAu-plated copper leadframe for solderability and reliability. Thermal performance is characterized under two mounting conditions: 248°C/W (minimal pad) and 103°C/W (1-inch² copper), enabling accurate power derating in real layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - Withstands up to −30V drain-source voltage before avalanche breakdown, suitable for 3.3V/5V rail switching with margin.
R_DS(ON) @ V_GS = −4.5V	0.6 Ω (typ) - Enables <100 mW conduction loss at −400 mA, critical for high-efficiency battery load control.
I_D (continuous, T_A = +25°C)	−0.9 A - Supports sustained load currents up to 900 mA with standard FR-4 PCB layout and 2 oz copper.
V_GS(TH)	−0.5 to −1.1 V - Ensures reliable turn-on with 1.8V GPIO or low-voltage logic drivers without level-shifting.
Q_g @ V_GS = −4.5V	1.0 nC - Reduces gate drive power and enables >1 MHz switching in compact DC-DC or power-path applications.
R_θJA (optimized layout)	103 °C/W - Allows 1.2 W power dissipation at +75°C ambient when using 1-inch² copper pour, supporting higher current bursts.
C_iss	54 pF - Low input capacitance minimizes Miller effect and improves noise immunity in high-speed switching nodes.

Pinout & Package

Package: X2-DFN1006-3 - 0.4 mm profile, 1.0 × 0.6 mm outline, 3-terminal bottom-side thermal pad, RoHS-compliant "Green" molding compound (UL 94V-0).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (S)	Connected to system ground or higher-potential rail; forms return path for load current and anchors body diode cathode.
2 (Drain)	Drain terminal (D)	Connects to load; carries full switched current and withstands −30V reverse bias during off-state.
3 (Gate)	Gate terminal (G)	Control input with ESD protection; requires ≤±8V drive; −1.1V max threshold enables direct microcontroller interfacing.

Key Features

Feature	Design Value
Ultra-compact footprint	0.6 mm² area - 13× smaller than SOT-23, enabling dense integration in wearables and hearing aids.
Low-profile package	0.4 mm height - Fits beneath thin display assemblies and stacked PCB interposers in slim mobile devices.
ESD-protected gate	±10 µA I_GSS max at ±8V - Prevents latch-up or damage during board handling and automated assembly.
Halogen- and antimony-free	<900 ppm Br/Cl, <1000 ppm Sb - Meets automotive and medical environmental compliance without sacrificing thermal or electrical performance.
Fast switching speed	t_r = 11 ns, t_f = 20 ns - Minimizes transition losses in PWM-controlled LED drivers and power-path OR-ing circuits.

Applications

Smartphone Power Management

Wireless Earbud Battery Protection

Use Scenario: Controlling power delivery to USB-C port logic and charging circuitry during insertion detection and mode negotiation.

IC Role / Device Role / Timing Role: High-side load switch isolating VBUS path with fast turn-on (<10 µs) and minimal voltage drop.

Use Value: 0.6Ω R_DS(ON) limits voltage drop to <240 mV at 400 mA, preserving USB PD handshake timing margins.

Use Scenario: Enabling/disabling battery-to-charge-management IC connection during charging state transitions.

IC Role / Device Role / Timing Role: Reverse-polarity protected load switch managing bidirectional current flow between Li-ion cell and charger IC.

Use Value: Integrated body diode with −0.8V V_SD ensures safe reverse-current blocking without external Schottky.

Portable Medical Sensor Hub

Compact IoT Node Power Gating

Use Scenario: Sequencing power to BLE radio, sensor array, and MCU subsystems to meet strict standby current targets.

IC Role / Device Role / Timing Role: Low-threshold (−0.5V min) P-MOSFET driven directly by 1.8V GPIO for precise sub-µA sleep-state isolation.

Use Value: −1.1V max V_GS(TH) guarantees full enhancement at 1.8V logic, eliminating need for gate driver ICs.

Use Scenario: Shutting down peripheral sensors and RF modules during deep-sleep cycles in battery-operated edge nodes.

IC Role / Device Role / Timing Role: Ultra-low-leakage (−1 µA I_DSS) high-side switch minimizing quiescent current in always-on monitoring systems.

Use Value: −1 µA max I_DSS at −30V reduces standby power loss to <30 nW, extending 10-year battery life targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	30V P-ch, R_DS(ON) = 0.85Ω @ −4.5V, SOT-23 package (2.9 × 1.3 mm), higher R_θJA = 220°C/W	Larger footprint and lower current capability (−0.7A) limit use in ultra-thin designs requiring <0.4 mm height	Select when board space permits larger package and higher thermal mass is acceptable for intermittent loads
AO3401	30V P-ch, R_DS(ON) = 0.085Ω @ −4.5V, SOT-23, but V_GS(TH) = −0.7 to −1.3V and no ESD protection	Lower R_DS(ON) suits higher-current loads, but gate vulnerability requires external TVS and layout care	Choose only with added gate protection circuitry and where 0.85 mm height is acceptable

Compared with DMN3020LSD-13 and AO3401, DMP31D1UFB4-7B uniquely combines 0.4 mm profile, 0.6Ω R_DS(ON), and integrated ESD protection-enabling single-component, zero-height load switching in next-gen wearables without layout overhead.

Availability

DMP31D1UFB4-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery management, portable medical sensor hubs, and compact IoT node power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for DMP31D1UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.

DMP31D1UFB4-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space- and height-constrained portable electronics requiring logic-level gate drive and robust ESD tolerance.

FAQ

What is the maximum continuous drain current for DMP31D1UFB4-7B at +75°C ambient?

The maximum continuous drain current is −0.7 A at +75°C ambient temperature when mounted on an FR-4 PCB with 1-inch² copper pour (R_θJA = 103°C/W). This value is derived from thermal derating curves in the datasheet and assumes no additional heatsinking beyond the specified layout.

Does DMP31D1UFB4-7B require an external gate resistor for typical 1.8V GPIO switching?

No external gate resistor is required for basic on/off control with 1.8V GPIO, as the device's low gate charge (1.0 nC) and −0.5V minimum V_GS(TH) ensure full enhancement. However, a 10–100Ω series resistor is recommended if driving from high-impedance sources or to damp ringing in high-frequency PWM applications.

Can DMP31D1UFB4-7B be used in reverse-battery protection circuits?

Yes-it functions as a high-side reverse-polarity protector when placed between battery positive and load. With its −30V V_DSS and integrated body diode, it blocks reverse current flow while allowing normal forward conduction, provided gate is tied to battery positive via a pull-up resistor during normal operation.

Is the X2-DFN1006-3 package compatible with standard reflow profiles for lead-free soldering?

Yes-the package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and supports standard lead-free reflow profiles (peak 260°C, 60 sec max). The NiPdAu over copper leadframe ensures solderability per MIL-STD-202, Method 208, and the UL 94V-0 molding compound withstands thermal cycling without delamination.

DMP31D1UFB4-7B Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.6 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 54 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN1006-3

DMP31D1UFB4-7B FAQ

1.How can I place an order for DMP31D1UFB4-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP31D1UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP31D1UFB4-7B reliable?

The price and inventory of DMP31D1UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP31D1UFB4-7B is usually 5 days.

3.What payment methods are accepted for DMP31D1UFB4-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP31D1UFB4-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP31D1UFB4-7B?

DMP31D1UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP31D1UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP31D1UFB4-7B?

For technical support, including DMP31D1UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP31D1UFB4-7B requirements.

6.How does Aetrix verify that DMP31D1UFB4-7B is sourced from the original manufacturer or authorized distributors?

All DMP31D1UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP31D1UFB4-7B meets industry standards.

7.What is the process for return or replacement of DMP31D1UFB4-7B?

All DMP31D1UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMP31D1UFB4-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP31D1UFB4-7B part is unused and in its original packaging.

Return procedure for DMP31D1UFB4-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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