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Diodes Incorporated DMP31D1UFB4Q-7B
- Part No.:
- DMP31D1UFB4Q-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMP31D1UFB4Q-7B.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-DFN1006-
- Quantity:
- Payment:
- Shipping:
Inventory:6,770
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Product details
Overview
DMP31D1UFB4Q-7B from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in X2-DFN1006-3 package, optimized for low-RDS(ON) and fast switching in space-constrained load-switch applications. It delivers 1 Ω @ VGS = −4.5 V, −400 mA, supports −0.9 A continuous drain current at +25°C, and features ESD-protected gate and AEC-Q101 qualification for automotive power management.
For engineers reviewing the DMP31D1UFB4Q-7B datasheet, DMP31D1UFB4Q-7B pinout, DMP31D1UFB4Q-7B application, or DMP31D1UFB4Q-7B equivalent, key selection criteria include its −30 V VDSS, 0.4 mm profile, 0.6 mm² footprint, −1.1 V max VGS(TH), and thermal resistance of 103 °C/W (with 1″² copper).
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining robust body diode performance and fast switching (tD(ON) = 3.8 ns, tF = 20 ns). Its −1.1 V maximum gate threshold enables reliable turn-on with low-voltage logic (e.g., 1.8 V/2.5 V GPIO), and integrated ESD protection (±10 μA IGSS) ensures gate survivability during handling and board assembly.
The device operates across −55°C to +150°C junction temperature range and is rated for 1.2 W power dissipation on FR-4 with 1″² copper. Its Ciss = 54 pF and Qg = 1.0 nC @ VGS = −4.5 V support efficient gate drive in high-frequency load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - Withstands up to −30 V drain-source voltage before avalanche breakdown, suitable for 24 V automotive and industrial rails. |
| RDS(ON) | 1 Ω @ VGS = −4.5 V, −400 mA - Enables <100 mW conduction loss at 0.4 A, critical for battery-powered load switching. |
| ID (continuous) | −0.9 A @ TA = +25°C - Supports compact DC-DC output stage or USB port power control without external heatsinking. |
| VGS(TH) | −0.5 to −1.1 V - Ensures full enhancement with standard low-voltage microcontroller outputs (1.8 V–3.3 V logic). |
| Qg | 1.0 nC @ VGS = −4.5 V - Reduces gate drive power and switching transition time in high-duty-cycle applications. |
| RθJA | 103 °C/W (with 1″² copper) - Allows operation up to +75°C ambient in thermally constrained PCB layouts. |
| Ciss | 54 pF - Minimizes Miller effect and improves noise immunity in fast-switching digital load-control circuits. |
Pinout & Package
Package: X2-DFN1006-3, 0.4 mm height, 0.6 mm² footprint, 3-terminal surface-mount plastic package with NiPdAu-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Current sink node | Connected to high-side rail (e.g., battery or supply); handles full load current and must be routed with adequate copper area for thermal relief. |
| Source (S) | Reference node / return path | Bonded to exposed thermal pad; requires direct connection to large ground plane for optimal RθJA and SOA performance. |
| Gate (G) | Control input | ESD-protected terminal accepting −4.5 V logic; low Ciss enables drive from weak GPIOs without external buffer. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.6 mm² - Thirteen times smaller than SOT-23, enabling placement in tight spaces such as wearable sensor modules or ultra-thin displays. |
| Low-profile construction | 0.4 mm height - Fits under mechanical shields and within slim enclosures where Z-height is constrained to <0.5 mm. |
| Automotive-grade qualification | AEC-Q101 qualified, PPAP-capable, manufactured in IATF 16949 facilities - Validated for use in engine control, infotainment, and ADAS power domains. |
| Robust gate protection | ESD-rated per HBM ≥2 kV (implied by ±10 μA IGSS and explicit "ESD Protected Gate" claim) - Eliminates need for external gate resistors or TVS in most portable designs. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with strict environmental mandates for automotive and medical end equipment. |
Applications
| Smartphone Power Management | Automotive Body Control Module |
|---|---|
|
Use Scenario: Controlling power to camera modules, SIM card slots, or USB-C accessory detection circuitry during sleep mode. IC Role / Device Role / Timing Role: High-side load switch enabling rapid, low-leakage power gating with minimal PCB area. Use Value: Achieves <1 μA off-state leakage and <100 mW conduction loss at 0.4 A, extending battery life without sacrificing response time. |
Use Scenario: Managing power to interior lighting drivers, door lock actuators, or HVAC sensors in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: AEC-Q101-compliant P-channel switch providing fault-tolerant, low-RDS(ON) power routing. Use Value: Delivers −0.9 A continuous current at +75°C ambient and withstands load-dump transients via inherent −30 V VDSS margin. |
| Wearable Health Monitor | Industrial IoT Sensor Node |
|
Use Scenario: Enabling/disabling ECG front-end amplifiers, optical heart-rate sensors, or Bluetooth LE radio sections based on activity state. IC Role / Device Role / Timing Role: Ultra-compact, low-threshold load switch controlled directly by ARM Cortex-M0+ GPIO. Use Value: −1.1 V VGS(TH) ensures full turn-on with 1.8 V logic; 0.4 mm height avoids interference with flex PCB bending radii. |
Use Scenario: Isolating LoRaWAN transceivers, MEMS accelerometers, or precision ADC reference supplies in remote field nodes. IC Role / Device Role / Timing Role: Thermally efficient power switch supporting extended outdoor operation from −40°C to +85°C ambient. Use Value: RθJA = 103 °C/W with standard layout allows full −0.7 A rating at +75°C, eliminating derating penalties in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30 V, 2.8 mΩ @ −10 V, SO-8 package (4.9 × 6.0 mm), higher RDS(ON) at low VGS (4.5 Ω @ −2.5 V) | Requires larger PCB area and higher gate drive voltage; better suited for higher-current, less space-constrained designs | Select when >1 A continuous current or dual-N/P channel integration is needed; not drop-in for DFN1006 footprint |
| AO3401 | 30 V, 52 mΩ @ −10 V, SOT-23 package (2.9 × 1.6 mm), VGS(TH) = −0.7 to −1.3 V, no AEC-Q101 qualification | Larger footprint (13× larger than DMP31D1UFB4Q), non-automotive grade, higher RDS(ON) at −2.5 V (2.5 Ω) | Choose for cost-sensitive consumer electronics where AEC-Q101 and ultra-miniature size are not required |
Compared with DMN3026LSD-13 and AO3401, DMP31D1UFB4Q-7B uniquely combines AEC-Q101 compliance, 0.4 mm height, and sub-1 Ω RDS(ON) at −2.5 V in a 1.0 × 0.6 mm package-making it the only option for automotive or portable designs demanding both miniaturization and reliability assurance.
Availability
DMP31D1UFB4Q-7B is available at Aetrix Electronics and suitable for smartphone power gating, automotive body control modules, and wearable health monitors requiring stable component supply and long-term lifecycle support.
Supply support for DMP31D1UFB4Q-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This part belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained, high-efficiency load-switching applications where footprint, height, and AEC-Q101 compliance are mandatory design requirements.
FAQ
What is the maximum safe operating junction temperature for DMP31D1UFB4Q-7B?
The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation at this limit requires strict adherence to the recommended pad layout (1″² copper) and derating of ID per Figure 5 and Figure 7. For sustained reliability in automotive applications, Diodes recommends limiting TJ to ≤125°C under worst-case ambient and power conditions.
Does DMP31D1UFB4Q-7B require a gate resistor for typical microcontroller drive?
No external gate resistor is required when driven by standard 3.3 V or 5 V GPIOs due to its low Qg (1.0 nC) and ESD-protected gate structure. However, a 10–100 Ω series resistor is recommended if driving from high-impedance sources or in noisy environments to damp ringing and reduce EMI, especially when routing >5 cm traces.
How does the body diode performance impact reverse-current protection in load-switch configurations?
The body diode has VSD = −0.8 to −1.2 V at −300 mA, enabling bidirectional current flow when the MOSFET is off but forward-biased. In high-side switch configurations, this permits back-powering from downstream loads unless blocked by an external Schottky diode-designers must account for this in fault-isolation schemes.
Is the X2-DFN1006-3 package compatible with standard reflow profiles for lead-free soldering?
Yes-the device is fully RoHS 3 compliant and qualified for standard IPC/JEDEC J-STD-020 Level 1 moisture sensitivity. It supports peak reflow temperatures up to 260°C and is compatible with Type 3 and Type 4 solder pastes; recommended profile follows Diodes' published guidelines for green molding compound packages with NiPdAu terminations.
DMP31D1UFB4Q-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.6 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 54 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMP31D1UFB4Q-7B FAQ
1.How can I place an order for DMP31D1UFB4Q-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP31D1UFB4Q-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP31D1UFB4Q-7B reliable?
The price and inventory of DMP31D1UFB4Q-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP31D1UFB4Q-7B is usually 5 days.
3.What payment methods are accepted for DMP31D1UFB4Q-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP31D1UFB4Q-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP31D1UFB4Q-7B?
DMP31D1UFB4Q-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP31D1UFB4Q-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP31D1UFB4Q-7B?
For technical support, including DMP31D1UFB4Q-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP31D1UFB4Q-7B requirements.
6.How does Aetrix verify that DMP31D1UFB4Q-7B is sourced from the original manufacturer or authorized distributors?
All DMP31D1UFB4Q-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP31D1UFB4Q-7B meets industry standards.
7.What is the process for return or replacement of DMP31D1UFB4Q-7B?
All DMP31D1UFB4Q-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMP31D1UFB4Q-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP31D1UFB4Q-7B part is unused and in its original packaging.
Return procedure for DMP31D1UFB4Q-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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