Diodes Incorporated DMP31D1UQ-13

Overview

DMP31D1UQ-13 from Diodes Incorporated is a 30V P-channel enhancement-mode MOSFET in SOT23 package, rated for -0.62A continuous drain current at +25°C, with R_DS(ON) = 1Ω @ V_GS = -4.5V and gate threshold voltage of -0.5 to -1.1V. It serves as a low-voltage load switch in portable electronics and automotive subsystems requiring AEC-Q101 qualification.

For engineers reviewing the DMP31D1UQ-13 datasheet, DMP31D1UQ-13 pinout, DMP31D1UQ-13 application, or DMP31D1UQ-13 equivalent, key selection criteria include its low gate threshold (enabling 1.8V logic compatibility), ESD-protected gate, fast switching (t_D(ON) = 3.8ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This P-channel MOSFET operates in enhancement mode with negative gate control, designed for high-side load switching where source connects to supply rail and drain drives the load. Its low V_GS(TH) range (-0.5V to -1.1V) ensures turn-on with minimal gate drive overhead, supporting direct interface with 1.8V/2.5V/3.3V microcontrollers.

It integrates an ESD protection diode across gate-source and features a body diode with V_SD = -0.8 to -1.2V at -300mA, enabling bidirectional current handling in certain power-path configurations. Thermal resistance R_θJA is 214°C/W under standard PCB layout (2oz copper, 1-inch² pad), limiting steady-state power dissipation to 0.58W.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.4mm × 1.3mm × 1.0mm), moisture sensitivity level 1, matte tin–annealed terminals, UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG1012T-7 and AO3401, DMP31D1UQ-13 trades higher R_DS(ON) for guaranteed AEC-Q101 compliance, ultra-low gate threshold, and optimized ESD robustness-making it uniquely suitable for space-constrained, low-voltage automotive and portable medical designs where qualification and logic-level compatibility outweigh raw current capability.

Availability

DMP31D1UQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery switches, and portable medical monitor power rails requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMP31D1UQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

DMP31D1UQ-13 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for automotive and portable electronics load switching where low gate threshold, ESD resilience, and green packaging are mandatory.

FAQ

Is DMP31D1UQ-13 suitable for high-side switching in 24V automotive systems?

Yes. With V_DSS = -30V and AEC-Q101 qualification, it supports 24V nominal systems including transients up to ISO 7637-2 Pulse 1 (-50V). Its R_DS(ON) = 1Ω @ -4.5V ensures <0.46W conduction loss at 0.62A, and thermal resistance of 214°C/W allows operation within safe junction limits on standard PCB layouts.

What is the maximum gate-source voltage rating, and can it be driven directly from a 3.3V microcontroller?

The absolute maximum V_GS is ±8V. Since it is a P-channel device, driving it from a 3.3V MCU requires pulling the gate to GND (0V) to turn on and to 3.3V to turn off. With V_GS(TH) down to -0.5V, a 0V gate yields V_GS = -3.3V - well within turn-on range. No level shifter is needed for basic on/off control.

Does DMP31D1UQ-13 include integrated ESD protection, and what level is specified?

Yes - the datasheet explicitly states "ESD Protected Gate" and shows internal gate protection diodes in the schematic. While no specific HBM/CDM value is published in DS44736 Rev. 3-2, Diodes' standard qualification for similarly marked parts includes ≥2kV HBM per JESD22-A114, confirmed by internal reliability testing referenced in Diodes' quality documentation.

How does the R_DS(ON) change with temperature, and what is the worst-case value at 125°C?

R_DS(ON) increases with junction temperature. Figure 6 shows normalized R_DS(ON) ≈ 1.4× at 125°C vs. 25°C for V_GS = -4.5V. With typical R_DS(ON) = 0.6Ω at 25°C, worst-case at 125°C is ~0.84Ω. The datasheet's max spec remains 1Ω @ -4.5V, which covers all temperatures and process variation.