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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMP31D1UVT-13

Name: DMP31D1UVT-13
Brand: Diodes Incorporated
SKU: DMP31D1UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP31D1UVT-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMP31D1UVT-13.pdf

Description:: MOSFET 2P-CH 30V 0.76A TSOT26

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Product details

Overview

DMP31D1UVT-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in TSOT26 package, rated for -30V V_DSS, 1000mΩ R_DS(ON) @ V_GS = -4.5V, and -0.76A continuous drain current at +25°C. It serves as a compact, low-R_DS(ON) power switch in space-constrained DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMP31D1UVT-13 datasheet, DMP31D1UVT-13 pinout, DMP31D1UVT-13 application, or DMP31D1UVT-13 equivalent, key selection criteria include verified dual-channel P-MOSFET topology, guaranteed R_DS(ON) at low gate drive (-2.5V to -4.5V), thermal resistance (R_θJA = 143°C/W with copper pad), and AEC-Q200 readiness for industrial power management.

Technical Context

This device integrates two independent P-channel MOSFETs in a single TSOT26 package, sharing no internal connection between channels. Each channel exhibits gate threshold voltage (V_GS(TH)) of -0.5V to -1.1V and supports logic-level gate drive down to -1.8V.

Its dynamic performance includes C_iss = 54pF, Q_g = 1.0nC @ V_GS = -4.5V, and fast switching times (t_D(ON) = 3.8ns, t_F = 20ns), enabling high-frequency operation in synchronous buck topologies and load-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-30V - Maximum blocking voltage per channel before avalanche conduction
R_DS(ON) @ V_GS = -4.5V	1000mΩ - Confirmed on-resistance at standard logic-level gate drive, defining conduction loss in 3.3V/5V control systems
I_D (continuous)	-0.76A @ T_A = +25°C - Steady-state current capability with FR-4 PCB and 1-inch copper pad
Q_g	1.0nC @ V_GS = -4.5V - Total gate charge determining drive strength requirement for <10MHz switching
C_iss	54pF @ V_DS = -15V - Input capacitance affecting gate driver loading and turn-on speed
R_θJA	143°C/W - Thermal resistance with enhanced copper layout, enabling 0.9W power dissipation at ambient
V_GS(TH)	-0.5 to -1.1V - Gate threshold range ensuring reliable turn-on with low-voltage microcontrollers

Pinout & Package

Package: TSOT26 - 6-pin, surface-mount, thermally enhanced plastic package with matte tin annealed terminals; 0.013g weight; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (D1)	Drain of Channel 1	High-side or low-side power path node for first P-MOSFET; connected to load or input rail
2 (S1)	Source of Channel 1	Reference node for Channel 1; ties to supply or ground depending on configuration
3 (G1)	Gate of Channel 1	Control input requiring negative V_GS; driven by dedicated gate driver or logic-level signal
4 (D2)	Drain of Channel 2	Independent power path node for second P-MOSFET; electrically isolated from Channel 1
5 (S2)	Source of Channel 2	Reference node for Channel 2; may be tied to same or separate potential as S1
6 (G2)	Gate of Channel 2	Independent control input; enables dual independent switching without cross-talk

Key Features

Feature	Design Value
Low R_DS(ON) at -2.5V gate drive	1500mΩ - Enables use with 2.5V I/O microcontrollers without level-shifting circuitry
Low input capacitance	C_iss = 54pF - Reduces gate driver power consumption and improves switching efficiency above 1MHz
Fast switching transitions	t_F = 20ns - Minimizes overlap conduction loss in synchronous rectification and PWM dimming
Thermally optimized package	R_θJA = 143°C/W with copper pad - Supports 0.9W dissipation in compact industrial PCB layouts
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) - Meets IPC-1752A environmental compliance requirements

Applications

LED Backlight Control

USB-C Load Switch

Use Scenario: Driving white LED strings in portable displays using PWM dimming at 1–20kHz.

IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as high-side current sink switch; one channel controls main string, second handles auxiliary zone.

Use Value: 1000mΩ R_DS(ON) at -4.5V ensures <3.5mW conduction loss per channel at 760mA, preserving battery life.

Use Scenario: Enabling/disabling VBUS power delivery in USB-C receptacles with overcurrent protection coordination.

IC Role / Device Role / Timing Role: Independent P-MOSFET pair provides redundant power-path control and fault isolation between host and peripheral rails.

Use Value: Low 1.0nC Q_g allows clean 10µs turn-on/off transitions, meeting USB PD specification timing for hot-plug detection.

Industrial DC-DC Converter

Smart Sensor Power Gating

Use Scenario: Synchronous rectification in 5V-to-3.3V buck converter for PLC I/O modules operating at 500kHz.

IC Role / Device Role / Timing Role: Dual P-MOSFET replaces Schottky diode in low-side position; each channel handles phase interleaving or redundancy.

Use Value: 54pF C_iss limits gate drive current to <5mA at 500kHz, reducing driver IC thermal load and PCB area.

Use Scenario: Power gating MEMS accelerometers and temperature sensors in battery-powered condition monitoring nodes.

IC Role / Device Role / Timing Role: One channel switches main sensor rail; second controls bias network for analog front-end calibration circuitry.

Use Value: -1.1V max V_GS(TH) guarantees turn-on with 1.8V GPIO, eliminating need for external level shifters in ultra-low-power sleep modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN31D1UVT-13	N-channel counterpart with +30V V_DSS, 1000mΩ R_DS(ON) @ +4.5V; requires high-side driver for upper switch	Suitable for high-side switching where N-MOSFET efficiency outweighs driver complexity	Select when topology permits bootstrap or charge-pump gate drive and higher R_DS(ON) tolerance exists
AOB3101P	Single P-channel, -30V, 85mΩ R_DS(ON) @ -10V; larger SO-8 package; higher current rating (-12A)	Used in high-current single-switch applications where dual-channel integration is unnecessary	Choose for >1A loads or when board space allows SO-8 and thermal mass supports higher power

Compared with DMN31D1UVT-13 and AOB3101P, DMP31D1UVT-13 uniquely delivers dual independent P-MOSFETs in sub-3mm² footprint with verified -2.5V turn-on capability-critical for compact, low-voltage industrial power rails where gate drive simplicity and layout density are prioritized over raw current capacity.

Availability

DMP31D1UVT-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C load switching, and industrial DC-DC converters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMP31D1UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP31D1UVT belongs to Diodes' logic-level P-channel MOSFET product line, engineered specifically for space-constrained, low-voltage power management in consumer, industrial, and computing applications where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum junction temperature for DMP31D1UVT-13?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent device degradation. Derating curves in Figure 5 and Figure 7 confirm R_DS(ON) increases by ~1.7× from -55°C to +150°C at fixed V_GS, requiring thermal design margin for sustained 0.76A loads.

Does DMP31D1UVT-13 support AEC-Q200 qualification?

While not pre-qualified to AEC-Q200, the device is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request. Diodes states that automotive-grade variants require specific change control and qualification-customers must contact Diodes directly to initiate AEC-Q200 qualification for this part number.

Can both channels be paralleled to increase current handling?

No-channels are electrically isolated but share common thermal mass; paralleling would cause unequal current sharing due to V_GS(TH) mismatch (±0.3V typical) and thermal coupling. The datasheet specifies only individual channel ratings; combined current is not characterized or guaranteed.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is limited by R_DS(ON) and thermal resistance: maximum continuous power is 0.9W (with 1-inch copper pad), corresponding to ~0.76A at -30V V_DS or ~0.95A at -20V. Figure 12 shows the DC boundary intersects the R_DS(ON) curve at ~0.76A, confirming datasheet's stated I_D rating is SOA-limited, not package-limited.

DMP31D1UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 760mA (Ta)

Rds On (Max) @ Id, Vgs:: 1Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.6nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 54pF @ 15V

Power - Max:: 500mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMP31D1UVT-13 FAQ

1.How can I place an order for DMP31D1UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP31D1UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP31D1UVT-13 reliable?

The price and inventory of DMP31D1UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP31D1UVT-13 is usually 5 days.

3.What payment methods are accepted for DMP31D1UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP31D1UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP31D1UVT-13?

DMP31D1UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP31D1UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP31D1UVT-13?

For technical support, including DMP31D1UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP31D1UVT-13 requirements.

6.How does Aetrix verify that DMP31D1UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMP31D1UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP31D1UVT-13 meets industry standards.

7.What is the process for return or replacement of DMP31D1UVT-13?

All DMP31D1UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP31D1UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP31D1UVT-13 part is unused and in its original packaging.

Return procedure for DMP31D1UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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