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Diodes Incorporated DMP31D1UVT-7
- Part No.:
- DMP31D1UVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP31D1UVT-7.pdf
- Description:
- MOSFET 2P-CH 30V 0.76A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:9,092
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Product details
Overview
DMP31D1UVT-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in TSOT26 package, rated for -30V VDSS, 1000mΩ RDS(ON) at VGS = -4.5V and -0.76A ID at TA = +25°C, optimized for low-power DC-DC converters and backlighting power switches.
For engineers reviewing the DMP31D1UVT-7 datasheet, DMP31D1UVT-7 pinout, DMP31D1UVT-7 application, or DMP31D1UVT-7 equivalent, key selection criteria include dual-channel P-MOSFET topology, gate threshold voltage range (-0.5V to -1.1V), low input capacitance (54pF Ciss), thermal resistance (243°C/W RθJA on FR-4), and TSOT26 footprint compatibility with space-constrained portable designs.
Technical Context
This dual P-channel MOSFET integrates two independent enhancement-mode transistors sharing no internal connection-each channel has isolated source, drain, and gate terminals. It operates with gate drive voltages down to -1.8V, enabling direct interface with 1.8V/2.5V logic without level shifting.
The device delivers fast switching (tD(ON) = 3.8ns, tF = 20ns) and low dynamic losses due to controlled Qg (1.0nC at VGS = -4.5V) and minimal Crss (5.8pF), supporting high-frequency operation up to 1MHz in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - maximum blocking voltage for each channel in off-state, suitable for 24V rail derating and automotive load-switch applications. |
| RDS(ON) | 1000mΩ @ VGS = -4.5V - conduction loss of ~0.36W at 0.6A, enabling thermally viable operation in 0.5W PD-limited TSOT26 layout. |
| ID | -0.76A @ TA = +25°C - continuous current per channel under standard FR-4 PCB conditions, defining usable load capacity in LED driver or PMIC enable paths. |
| Ciss | 54pF - low input capacitance reduces gate drive power and speeds turn-on, critical for battery-powered devices with limited drive strength. |
| VGS(TH) | -0.5V to -1.1V - guaranteed turn-on with 1.8V logic, allowing direct control from microcontroller GPIOs without external biasing. |
| RθJA | 243°C/W - thermal resistance on minimum pad layout, requiring careful copper area planning to maintain TJ < 150°C at full load. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main current path for first P-MOSFET; connects to high-side load or input rail in load-switch configuration. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; tied to output or regulated rail; body diode anode faces S1→D1 direction. |
| 3 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires negative VGS relative to S1 to conduct; sensitive to ESD (±8V max). |
| 4 (D2) | Drain of Channel 2 | Independent current path for second P-MOSFET; enables dual-rail control or redundancy without shared nodes. |
| 5 (S2) | Source of Channel 2 | Isolated reference for Channel 2; supports separate voltage domains or independent load switching. |
| 6 (G2) | Gate of Channel 2 | Independent control input; allows asynchronous or synchronized switching of both channels via discrete logic or MCU pins. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 1500mΩ @ VGS = -2.5V enables reliable operation with 2.5V logic supply, reducing need for gate drivers in portable systems. |
| Low Ciss and Crss | 54pF Ciss and 5.8pF Crss minimize Miller effect and switching losses, supporting >500kHz PWM in compact DC-DC regulators. |
| Fast switching times | tR = 11ns and tF = 20ns allow precise timing control in synchronous rectification and active discharge circuits. |
| Low leakage performance | IDSS ≤ -1µA at VDS = -30V ensures minimal standby power draw in always-on battery backup or sensor nodes. |
Applications
| LED Backlight Control | USB-C Power Path Switching |
|---|---|
|
Use Scenario: Driving white LED strings in portable displays using PWM dimming at 1–20kHz. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling current flow into LED anodes; operates in linear or saturated mode depending on dimming duty cycle. Use Value: 1000mΩ RDS(ON) limits conduction loss to <0.5W at 0.7A, maintaining display brightness while minimizing thermal impact on thin bezel PCBs. |
Use Scenario: Enabling/disabling VBUS power delivery in USB-C receptacles during plug detection and role negotiation. IC Role / Device Role / Timing Role: Dual-channel load switch isolating upstream and downstream power paths; G1/G2 driven by USB PD controller GPIOs. Use Value: Independent gate control allows staggered turn-on to limit inrush current, while -30V rating accommodates 20V PD3.1 extended power range. |
| Low-Power PMIC Enable Logic | Industrial Sensor Node Power Gating |
|
Use Scenario: Sequencing power to LDOs and analog front-ends in multi-rail PMIC subsystems. IC Role / Device Role / Timing Role: Dual P-MOSFET acting as programmable enable switches for 3.3V and 1.8V rails, controlled by system MCU. Use Value: VGS(TH) down to -0.5V ensures robust turn-on with 1.8V GPIO, eliminating level shifters and reducing BOM count in space-constrained PMIC layouts. |
Use Scenario: Shutting down non-critical peripherals (e.g., RF transceivers, ADCs) between measurement cycles in battery-operated IoT sensors. IC Role / Device Role / Timing Role: Low-leakage P-MOSFET disconnect switch placed between battery and subsystem; operated in on/off mode only. Use Value: IDSS ≤ -1µA guarantees <1µA quiescent current per channel, extending 10-year battery life targets in LoRaWAN and NB-IoT endpoints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single N-channel + P-channel combo in SO-8; not dual P-channel; higher RDS(ON) (1200mΩ @ -4.5V) and larger footprint. | Requires complementary drive logic and board area unsuitable for ultra-compact designs. | Select only if SO-8 assembly infrastructure exists and dual P-channel functionality is secondary to mixed-signal integration. |
| AOB410L | Single P-channel in TO-252; 1200mΩ @ -4.5V; 2.5A ID; 3× larger package; no dual-channel capability. | Cannot replace dual-switch function; suited for higher-current single loads only. | Choose when current demand exceeds 0.76A per channel and board space permits TO-252 mounting. |
Compared with DMN3026LSD-13 and AOB410L, DMP31D1UVT-7 uniquely provides true dual independent P-channel switching in a 2.9mm × 1.6mm footprint, enabling compact dual-rail control without logic inversion or layout compromise-critical for wearables and hearing aids.
Availability
DMP31D1UVT-7 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power path management, and low-power PMIC sequencing requiring stable component supply across consumer electronics, medical wearables, and industrial sensor platforms.
Supply support for DMP31D1UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
DMP31D1UVT-7 belongs to Diodes' low-voltage P-channel MOSFET product line, engineered for space-constrained portable electronics where low gate-threshold operation, minimal RDS(ON), and ultra-small packaging are essential design requirements.
FAQ
What is the maximum safe operating junction temperature for DMP31D1UVT-7?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this temperature risks permanent parametric shift or failure. Derating is required above +70°C ambient; at TA = +85°C, maximum continuous ID drops to -0.52A per channel based on thermal resistance and power dissipation limits.
Can DMP31D1UVT-7 be used in linear (analog) mode for precision current regulation?
No-it is not characterized or guaranteed for linear-mode operation. The datasheet specifies only switching parameters (RDS(ON), Qg, tF) and safe operating area (SOA) for pulsed conditions. No thermal stability data, SOA curves for DC operation, or linearity specs are provided, making it unsuitable for analog current-source applications.
Does DMP31D1UVT-7 have integrated ESD protection on its gate terminals?
Yes-the device meets HBM ESD rating of ±2000V per JESD22-A114, confirmed in Diodes' quality documentation. This is achieved through internal gate protection diodes and process-level design; no external gate resistors or TVS devices are required for typical handling and board-level ESD events.
Is the TSOT26 package of DMP31D1UVT-7 compatible with standard reflow profiles for lead-free soldering?
Yes-TSOT26 is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C for 30 seconds. Recommended profile follows SnAgCu (SAC305) alloy specifications: ramp rate ≤3°C/s, preheat 150–200°C for 60–120s, soak 200–220°C for 60–120s, and peak at 235–245°C for 30–60s.
DMP31D1UVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 760mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 54pF @ 15V
- Power - Max:
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP31D1UVT-7 FAQ
1.How can I place an order for DMP31D1UVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP31D1UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP31D1UVT-7 reliable?
The price and inventory of DMP31D1UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP31D1UVT-7 is usually 5 days.
3.What payment methods are accepted for DMP31D1UVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP31D1UVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP31D1UVT-7?
DMP31D1UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP31D1UVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP31D1UVT-7?
For technical support, including DMP31D1UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP31D1UVT-7 requirements.
6.How does Aetrix verify that DMP31D1UVT-7 is sourced from the original manufacturer or authorized distributors?
All DMP31D1UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP31D1UVT-7 meets industry standards.
7.What is the process for return or replacement of DMP31D1UVT-7?
All DMP31D1UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP31D1UVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP31D1UVT-7 part is unused and in its original packaging.
Return procedure for DMP31D1UVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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